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| APM3020P P-Channel Enhancement Mode MOSFET Features * * * * -30V/-11A, RDS(ON) = 17m(typ.) @ VGS = -10V RDS(ON) = 24m(typ.) @ VGS = -5V Super High Density Cell Design Reliable and Rugged TO-252 Package Pin Description G D S Applications Top View of TO-252 * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Ordering and Marking Information APM 3020P H a n d lin g C o d e T e m p. R a ng e P a c ka g e C o d e P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 3020P U : APM 3020P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating -30 20 -40 -70 50 20 Unit V A W Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Maximum Power Dissipation TA=25 C TA=100 C ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 1 www.anpec.com.tw APM3020P Absolute Maximum Ratings Symbol TJ TSTG RJC Parameter Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Case (TA = 25C unless otherwise noted) Rating 150 -55 to 150 2.5 Unit C C C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25C unless otherwise noted) APM3020P Min. -30 -1 -1 17 24 -1.3 23 10 9 VDD=-15V , IDS=-6A , VGEN=-10 V , RG=1 RL=2.5 VGS=0V VDS=-25V Frequency=1.0MHz 16 22 75 31 3720 580 245 pF 30 30 120 80 ns -3 100 20 30 -1.3 30 nC Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage VGS=0V , IDS=-250A Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VDS=-24V , VGS=0V VDS=VGS , IDS=-250A VGS=20V , VDS=0V VGS=-10V , IDS=-11A VGS=-5V , IDS=-7A ISD=-11A, VGS=0V VDS=-15V , VGS=-4.5V, IDS=-4.6A V A V nA m V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Notes a b Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance : Guaranteed by design, not subject to production testing : Pulse test ; pulse width 500s, duty cycle 2% Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 2 www.anpec.com.tw APM3020P Typical Characteristics Output Characteristics 50 VGS=4,5,6,7,8,9,10V Transfer Characteristics 50 -IDS-Drain Current (A) 30 20 -IDS-Drain Current (A) 40 40 30 V GS=3V 20 TJ=125C TJ=25C TJ=-55C 10 VGS=2.5V 10 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -VDS-Drain-to-Source Voltage (V) -VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250A On-Resistance vs. Drain Current 0.035 -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance () 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.030 -VGS=5V 0.025 0.020 0.015 0.010 0.005 -VGS=10V -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 Tj-Junction Temperature (C) -IDS-Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 3 www.anpec.com.tw APM3020P Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.15 -IDS=7A On-Resistaence vs. Junction Temperature 0.030 -V GS=10V -IDS=11A RDS (ON)-On-Resistance () 0.12 RDS(ON)-On-Resistance () (Normalized) 0.025 0.020 0.015 0.010 0.005 0.000 -50 0.09 0.06 0.03 0.00 0 2 4 6 8 10 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) Tj-Junction Temperature (C) Gate Charge 10 3000 -VDS =15V -IDS=4.6A Capacitance Characteristics -VGS-Gate-to-Source Voltage (V) C-Capacitance (pF) 8 2500 Ciss 2000 1500 1000 500 0 Coss Crss 6 4 2 0 0 10 20 30 40 0 5 10 15 20 25 30 QG-Total Gate Charge (nC) -VDS-Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 4 www.anpec.com.tw APM3020P Typical Characteristics Cont. Source-Drain Diode Forward Voltage 50 Single Pulse Power 3000 2500 2000 10 -ISD-Source Current (A) Power (W) 1 TJ=150C TJ=25C 1500 1000 500 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50C/W 3. TJM-TA=PDMZthJA 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 5 www.anpec.com.tw APM3020P Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 APM3020P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 7 APM3020P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape Po E P P1 D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 1.5 0.25 J 2 0.5 Po 4.0 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 0.1 T2 2.5 0.5 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 8 www.anpec.com.tw APM3020P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 9 www.anpec.com.tw |
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