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| 2SC4662 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4662 500 400 10 5(Pulse10) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ (Ta=25C) 2SC4662 Unit A V V V MHz pF 13.0min 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.3 ton (s) 1max tstg (s) 2.5max tf (s) 0.5max 2.54 3.9 BCE 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (IC/I B= 5) 2 I C - VBE Temperature Characteristics (Typical) (VCE=4V) 5 -55C Collector Current I C (A) 4 3 1 -55C (Case V B E( sat) Temp) mp) ) mp p) mp) e Te (Cas eT Te 25C (Case 125C (C 2 p) ase Tem (C C ( Te V C E( sat) 0 0.01 0.05 0.1 C 125 25C 0.5 1 5 0 0 0.2 0.4 125 as 0.6 25C 1 0.8 -55C e (Case Cas Temp em ) 1.0 1.2 1.4 Collector Current I C( A) Base-Emittor Voltage V B E( V) h FE - IC Temperature Characteristics (Typical) (VCE=4V) 50 DC C urrent G ain h FE t on *t stg * t f - I C Characteristics (Typical) j - a( C/W) 3 5 j-a - t Characteristics ton*t s t g*t f( s) 125C 25C V C C 200V I C: I B 1: I B 2= 10:1:-2 t s tg 1 0.5 t on tf 0.1 0.1 0.5 1 3 Sw it ching Time -55C Transient Thermal Resistance 1 10 5 0.01 0.05 0.1 0.5 1 5 0.5 0.4 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 10 Reverse Bias Safe Operating Area 20 10 30 P c - T a Derating 5 Collector Cur rent I C( A) 0 s 5 Collect or Cur re nt I C( A) Ma xim um Powe r Dissipat io n P C( W) W ith 20 In fin ite he at si 1 1 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1% nk 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 2 0.1 5 10 50 100 500 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 116 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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