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| Semiconductor April 1999 CES PRO S S SIGN AWN HDR NEW DE T T WI O PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 JEDEC STYLE TO-247 ANODE ANODE CATHODE GATE RETURN GATE 65A, 1000V P-Type MOS Controlled Thyristor (MCT) Package Features * 65A, -1000V * VTM -1.4V at I = 65A and +150oC * 2000A Surge Current Capability * 2000A/s di/dt Capability * MOS Insulated Gate Control * 100A Gate Turn-Off Capability at +150oC CATHODE (FLANGE) Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. PART NUMBER INFORMATION PART NUMBER MCTV65P100F1 MCTA65P100F1 PACKAGE TO-247 MO-093AA BRAND M65P100F1 M65P100F1 JEDEC MO-093AA (5-LEAD TO-218) ANODE ANODE CATHODE GATE RETURN GATE CATHODE (FLANGE) Symbol G A K NOTE: When ordering, use the entire part number. Formerly TA9900. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV65P100F1 MCTA65P100F1 UNITS V V A A A A V V A/s W W/oC oC oC Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: VRRM IK25 IK90 ITSM ITC VGA VGA dv/dt di/dt PT TJ, TSTG TL -1000 +5 85 65 2000 100 20 25 See Figure 11 2000 208 1.67 -55 to +150 260 1. Maximum Pulse Width of 200s (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1999 File Number 3516.5 2-13 Specifications MCTV65P100F1, MCTA65P100F1 Electrical Specifications PARAMETER Peak Off-State Blocking Current TC = +25oC Unless Otherwise Specified SYMBOL IDRM TEST CONDITIONS VKA = -1000V, VGA = +18V TC = +150oC TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN TYP MAX 3 100 4 100 1.4 1.5 200 UNITS mA A mA A V V nA Peak Reverse Blocking Current IRRM VKA = +5V, VGA = +18V On-State Voltage VTM IK = IK90, VGA = -10V VGA = 20V VKA = -20V, TJ = +25oC VGA = +18V L = 200H, IK = IK90 = 65A RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -400V Gate-Anode Leakage Current Input Capacitance IGAS CISS - 10 - nF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy Thermal Resistance tD(ON)I - 120 - ns tRI tD(OFF)I - 160 750 - ns ns tFI EOFF RJC - 1.45 18 0.5 1.9 0.6 s mJ oC/W Typical Performance Curves PULSE TEST PULSE DURATION = 250s DUTY CYCLE < 2% 100 IK, DC CATHODE CURRENT (A) 90 80 70 60 50 40 30 20 10 0 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 PACKAGE LIMIT IK, CATHODE CURRENT (A) 100 TJ = +150oC TJ = +25oC TJ = -40oC 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VTM, CATHODE VOLTAGE (V) TC, CASE TEMPERATURE (oC) FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-14 MCTV65P100F1, MCTA65P100F1 Typical Performance Curves (Continued) 200 tD(ON)I, TURN-ON DELAY (ns) TJ = +150oC, RG = 1, L = 200H tD(OFF)I, TURN-OFF DELAY (s) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 IK, CATHODE CURRENT (A) 80 90 100 0 10 20 30 40 50 60 70 80 90 100 IK, CATHODE CURRENT (A) VKA = -400V VKA = -500V TJ = +150oC, RG = 1, L = 200H 150 VKA = -400V 100 VKA = -500V 50 0 FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H 1.8 1.7 tFI, FALL TIME (s) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 VKA = -500V VKA = -400V 300 250 tRI, RISE TIME (ns) 200 150 VKA = -400V VKA = -500V 100 50 0 0 10 20 30 40 50 60 70 80 90 100 IK, CATHODE CURRENT (A) 0 10 20 30 40 50 60 70 IK, CATHODE CURRENT (A) 80 90 100 FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL) FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT (TYPICAL) EOFF, TURN-OFF SWITCHING LOSS (mJ) EON, TURN-ON SWITCHING LOSS (mJ) 10 TJ = +150oC, RG = 1, L = 200H VKA = -500V TJ = +150oC, RG = 1, L = 200H VKA = -500V 10 VKA = -400V VKA = -400V 1.0 1 0 10 20 30 40 50 60 70 80 90 100 IK, CATHODE CURRENT (A) 0 10 20 30 40 50 60 70 IK, CATHODE CURRENT (A) 80 90 100 FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) FIGURE 8. TURN-OFF ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 2-15 MCTV65P100F1, MCTA65P100F1 Typical Performance Curves (Continued) fMAX, MAX OPERATING FREQUENCY (kHz) 50 IK, PEAK CATHODE CURRENT (A) fMAX1 = 0.05 / tD(ON)I + tD(OFF)I fMAX2 = (PD - PC) / ESWITCH PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION (PC DUTY FACTOR = 50%) RJC = 0.5oC/W 120 100 CS = 1.0F 80 CS = 0.7F 60 CS = 0F 40 20 0 100 IK, CATHODE CURRENT (A) 0 -100 -200 -300 -400 -500 -600 -700 -800 -900 -1000 VKA, PEAK TURN OFF VOLTAGE (V) TJ = +150oC, VGA = 18V 10 VKA = -500V VKA = -400V 1 10 FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT (TYPICAL) TJ = +150oC -1100 VDRM, BREAKDOWN VOLTAGE (V) -1075 -1050 -1025 -1000 -975 -950 -925 -900 -875 -850 -825 -800 0.1 FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE VOLTAGE -100 CS = 0.1F, TJ = +150oC CS = 0.1F, TJ = +25oC CS = 1F, TJ = +150oC SPIKE VOLTAGE (V) -10 CS = 2F, TJ = +150oC CS = 1F, TJ = +25oC CS = 2F, TJ = +25oC -3 1.0 10 100 dv/dt (V/S) 1,000 10,000 0 5 10 15 20 25 30 di/dt (A/s) 35 40 45 50 FIGURE 11. BLOCKING VOLTAGE vs dv/dt FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL) Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (IK) plots are possible using the information shown for a typical unit in Figures 3 to 8. The operating frequency plot (Figure 9) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(ON)I + tD(OFF)I). tD(ON)I + tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(ON)I is defined as the 10% point of the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value. tD(OFF)I is defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EON+EOFF). The allowable dissipation (PD) is defined by PD = (TJMAX - TC) / RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used and the conduction losses (PC) are approximated by PC = (VKA * IK) / 2. EON is defined as the sum of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the anode-cathode voltage equals saturation voltage (VKA = VTM). EOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0). 2-16 MCTV65P100F1, MCTA65P100F1 Test Circuits VG 200H + + DUT IK DIODES RHRG75120 VK IK + VG DUT 20V CS 10k + CS 4.7k FIGURE 13. SWITCHING TEST CIRCUIT FIGURE 14. VSPIKE TEST CIRCUIT VG 10% 90% VG di/dt -VKA 90% IK IK 10% tD(OFF)I tFI tRI tD(ON)I VTM VSPIKE VAK FIGURE 15. SWITCHING TEST WAVEFORMS FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCT's Mos Controlled Thyristors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. MCT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as *"ECCOSORB LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGA. Exceeding the rated VGA can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Trademark Emerson and Cumming, Inc. 2-17 - - 500 VA 9V |
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