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| PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode IXFR 44N50P VDSS ID25 trr RDS(on) (Electrically Isolated Back Surface) = = 500 V 24 A 150 m 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Transient Continuous TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 10 TC = 25 C Maximum Ratings 500 500 40 30 24 132 44 55 1.7 10 208 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ N/lb g ISOPLUS247 (IXFR) E153432 G D S ISOLATED TAB D = Drain G = Gate S = Source Features l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting Force 300 2500 20..120 / 4.5..25 5 l l l Advantages Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 22 A TJ = 125 C Characteristic Values Min. Typ. Max. 500 2.5 5.0 100 25 500 150 V V nA A A m l l l Easy to mount Space savings High power density (c) 2006 IXYS All rights reserved DS99319E(03/06) IXFR 44N50P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 32 5440 VGS = 0 V, VDS = 25 V, f = 1 MHz 639 40 25 VGS = 10 V, VDS = 0.5 VDSS, ID = 22 A RG = 3 (External) 27 70 18 98 VGS= 10 V, VDS = 0.5 VDSS, ID = 22 A 35 30 S pF pF pF ns ns ns ns nC nC nC 0.6 C/W 0.15 C/W ISOPLUS247 Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 20 V; ID = 22 A, Note 1 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 22 A, -di/dt = 100 A/s VR = 100V Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 30 132 1.5 200 0.6 6.0 A A V ns C A Notes: 1. Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 6,771,478 B2 IXFR 44N50P Fig. 1. Output Characteristics @ 25C 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V 6V V GS = 10V 7V 100 90 80 70 V GS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 60 50 40 30 20 10 0 0 3 6 9 12 7V 6V 5V 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125C 45 40 35 V GS = 10V 7V 3.2 Fig. 4. R DS(on) Normalized to ID = 22A Value v s. Junction Temperature V GS = 10V 2.8 R DS(on) - Normalized I D - Amperes 30 25 20 15 10 5 0 0 2 4 6 8 10 6V 2.4 2 1.6 1.2 0.8 0.4 I D = 44A I D = 22A 5V 12 14 16 -50 -25 0 25 50 75 100 125 150 V DS - Volts T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 22A Value v s. Drain Current 3.2 3.0 2.8 V GS = 10V TJ = 125C 27 24 50 45 40 21 Fig. 6. Maximum Drain Current vs. Tem perature Case Temperature Fig. 6. Drain Current vs. Case R DS(on) - Normalized 2.6 2.4 35 30 25 20 15 10 5 -50 0 -25 0 25 50 75 100 125 150 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 90 100 TJ = 25C I D - Amperes I D - Amperes 18 15 12 9 6 3 0 I D - Amperes -50 -25 T - Degrees Centigrade 0 25 50 75 C TC - Degrees Centigrade 100 125 150 (c) 2006 IXYS All rights reserved IXFR 44N50P Fig. 7. Input Admittance 65 60 55 50 60 55 50 45 TJ = - 40C 25C 125C Fig. 8. Transconductance 40 35 30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 6.5 TJ = 125C 25C - 40C g f s - Siemens 45 I D - Amperes 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 V GS - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 120 8 100 7 10 9 V DS = 250V I D = 22A I G = 10mA Fig. 10. Gate Charge I S - Amperes V GS - Volts TJ = 25C 0.9 1 1.1 1.2 80 60 40 20 0 0.4 0.5 0.6 0.7 0.8 TJ = 125C 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 V SD - Volts Q G - NanoCoulombs Fig. 11. Capacitance 10,000 1,000 Fig. 12. Forward-Bias Safe Operating Area TJ = 150C C iss TC = 25C RDS(on) Limit Capacitance - PicoFarads 1,000 I D - Amperes 100 25s 100s 10 1ms 10ms DC C oss 100 f = 1 MHz 10 0 5 10 15 20 25 C rss 1 10 100 30 35 40 1000 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXFR 44N50P Fig. 13. Maximum Transient Thermal Resistance 1.00 R (th)JC - C / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved IXYS REF: T_44N50P (8J) 03-21-06-B.XLS |
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