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BB640...
Silicon Variable Capacitance Diode
For Hyperband TV / VTR tuners, Bd l
BB640
1
2
Type BB640
Package SOD323
Configuration single
LS (nH) Marking 1.8 red S
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature (R 5k ) IF Top Tstg 20 -55 ... 150 -55 ... 150 mA C Symbol VR VRM Value 30 35 Unit V
1
Nov-07-2002
BB640...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 200
pF 62 47.5 2.85 2.8 69 54.5 3.28 3.05 16.6 1.15 76 61.5 3.7 3.3 25 2.5 %
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 CT2 /CT25 CT/CT
19.5 15 -
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz
CT = 12 pF, f = 100 MHz
1For
details please refer to Application Note 047.
2
Nov-07-2002
Series resistance
Capacitance matching1)
rS
BB640...
Diode capacitance CT =
f = 1MHz
(VR)
Temperature coefficient of the diode
CT
100 pF 90 80 70 60 50 40 30 20 10 0 10 -1
0 1
EHD07045
10 -3
1/C
TCc
10 -4
10
10
V VR
10
2
10 -5 0 10
VR = 28V
300
TA = Parameter
10 -9
pA
10 -10 200
IR
IR
150
10
-11
100 10 -12 50
0 0
10
20
30
40
50
60
70
80 C
100
10 -13 0
4
8
12
TA
3
Reverse current I R =
(TA)
Reverse current IR =
capacitance TCc =
(VR )
10
1
V
10
2
VR
(VR)
85C
0C
16
20
24
V
30
VR
Nov-07-2002

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