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66004
40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE
Mii
OPTOELECTRONIC PRODUCTS DIVISION
Features: * * * * High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation
Applications: * * * * Grid current modulator Power Supply Feedback Switching between power supplies Patient station isolation
DESCRIPTION In the 66004, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability, hermetically sealed, ceramic package. Available in commercial (0 to +70C), extended temperature range (-40 to +85C) and full Military temperature range (-55 to +125C). Contact the factory for special custom or multi-channel requirements! ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ....................... 35V Emitter-Collector Voltage........................................................................................................................................................ 7V Continuous Collector Current ............................................................................................................................................ 50mA Continuous Transistor Power Dissipation ..................................................................(see Note 1) .............................. 250mW Input to Output Isolation Voltage ........................................................................................................................................ 40kV Input Diode Continuous Forward Current at (or below) 65C Free-Air Temperature ................................................... 100mA Reverse Input Voltage .......................................................................................................................................................... .2V Continuous LED Power Dissipation ..........................................................................(see Note 1) ................................ 250mW Storage Temperature........................................................................................................................................ -65C to +150C Operating Free-Air Temperature Range .......................................................................................................... -55C to +125C Lead Solder Temperature (1/16" from case for 10 seconds max.) ..................................................................................240C Notes: 1. Derate linearly to 125C free-air temperature at the rate of 2.45 mW/C. Package Dimensions Schematic Diagram
C E K A -X 02 B C
A N O D E (+ ) C O LLE C T O R (+ ) O 0.01 75 [O 0.44] BASE O 0.01 75 [O 0.44] C A T H O D E (-) E M IT T E R (-) 16,00 0 V , B LA C K D O T RED DOT 2 LE A D S 3 LE A D S O 0.15 50 [O 3.94]
(1)
A
-X 01
(3) (5) (4) (3)
O 0.31 00 [O 7.87]
(2) (1)
0.500 M IN [12 .70]
0.500 M IN [12 .70] 0.849 3 [21.57]
(2)
K B
(5) (4)
A LL D IM E N S IO N S A R E IN IN C H E S [M ILLIM E TE R S ] N O M IN A L
N O TE : B LA C K D O T IN D IC A TE S A N O D E F O R LE D R E D D O T IN D IC A T E S C O LLE C TO R F O R T R A N S IS T O R .
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION * 725 E. Walnut St., Garland, TX 75040 * (972) 272-3571 * Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com
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66004
ELECTRICAL CHARACTERISTICS
TA = 25C unless otherwise specified.
40kV HIGH VOLTAGE ISOLATER
PARAMETER
Input Diode Static Reverse Current 66004-X01 66004-X02 66004-X01 66004-X02 66004-X01 66004-X02 66004-X01 66004-X02
SYMBOL
IR
MIN
TYP
MAX
100
UNITS
A
TEST CONDITIONS
VR = 2V
Input Diode Static Forward Voltage
VF
1.15
1.8
V
IF = 20mA
Reverse Breakdown Voltage
BVR
2
10
V
IR = 100A
Input Diode Capacitance
CIN
25
pF
V = 0V, f = 1MHz
OUTPUT TRANSISTOR
TA = 25C unless otherwise specified.
PARAMETER
Collector-Emitter Breakdown Voltage Collector-Emitter Dark Current
SYMBOL
V(BR)CEO ICEO
MIN
35
TYP
MAX
UNITS
V
TEST CONDITIONS
IC = 1mA, IB = 0, IF = 0 VCE = 10V, IF = 0mA
75 300
nA nA
COUPLED CHARACTERISTICS
TA = 25C unless otherwise specified.
PARAMETER
Current Transfer Ratio 66004-X01 66004-X02 Collector-Emitter Saturation Voltage 66004-X01 66004-X02 DC Isolation Voltage 66004-X01 66004-X02 Rise Time 66004-X01 66004-X02 Fall Time 66004-X01 66004-X02
SYMBOL
CTR
MIN
5 100
TYP
MAX
UNITS
%
TEST CONDITIONS
VCE = 5V, IF = 10mA
VCE(SAT)
0.5 1.2
V
IF = 50mA, IC = 1mA
VISO
40 40
kV
tr
10 20
s
VCC = 5V, IF =16mA, RL=100
tf
10 20
s
VCC = 5V, IF =16mA, RL=100
RECOMMENDED OPERATING CONDITIONS:
PARAMETER Input Current, High Level Supply Voltage Operating Temperature PART # 66004-001 66004-101 66004-011 66004-002 66004-102 66004-012 SYMBOL IFH VCE TA MIN 16 5 -55 MAX 50 10 125 UNITS mA V
C
SELECTION GUIDE
PART DESCRIPTION Transistor output, military operating range (-55 to +125C) Transistor output, full mil-temp (-55 to +125C) with 100% device screening (on discrete components) Transistor output, commercial version Isolator(0 to 70C) Darlington output, military operating range (-55 to +125C) Darlington output, full mil-temp (-55 to +125C) with 100% device screening (on discrete components) Darlington output, commercial version Isolator(0 to 70C)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION * 725 E. Walnut St., Garland, TX 75040 * (972) 272-3571 * Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com
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