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| QID0630006 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series Hermetic Module 300 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All components are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Fast Recovery Free-Wheel Diode High Frequency Operation (2025kHz) Isolated Base plate for Easy Heat sinking Fully Hermetic Package Package Design Capable of Use at High Altitudes Schematic: Applications: AC Motor Control Motion/Servo Control Air Craft Applications Ordering Information: Contact Powerex Custom Modules Page 1 4/11/2001 QID0630006 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series Hermetic Module 300 Amperes/600 Volts Maximum Ratings, Tj=25C unless otherwise specified Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation V Isolation Symbol VCES VGES IC ICM IFM IFM Pd VRMS 600 20 300 600* 300 600* 1100 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts Volts Static Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) VCE(sat) Test Conditions VCE=VCES VCE=0V IC=30mA, VCE=10V IC=300A, VGE=15V IC=300A, VGE=15V, Tj=150C VCC=300V, IC=300A, VGS=15V IE=300A, VGS=0V Min Typ Max 1.0 0.5 7.5 2.8 Units mA A Volts Volts Volts 4.5 6.0 2.1 2.15 Total Gate Charge QG 900 nC Diode Forward Voltage VFM 2.8 Volts Dynamic Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn off delay time Fall Time Diode Reverse Recovery Time Diode reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=300A VGE1=VGE2=15 V RG=2.1 IE=300A diE/dt=600A/S Min Typ Max 30 10.5 6 350 600 350 300 150 0.81 Units nF nF nF nS nS nS nS nS C Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Symbol RJC RJC Test Conditions Per IGBT Per Diode Min Typ Max 0.11 0.24 Units C/W C/W Page 2 4/11/2001 QID0630006 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series Hermetic Module 300 Amperes/600 Volts Page 3 4/11/2001 QID0630006 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series Hermetic Module 300 Amperes/600 Volts Page 4 4/11/2001 |
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