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| MAPRST1214-150UF Preliminary Datasheet Revision 01/14/2003 FEATURES NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Typcial Second Harmonic Level < -30dBc ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 70 4.0 19.5 580 200 -65 to +200 RADAR PULSED POWER TRANSISTOR 150W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle OUTLINE DRAWING Units V V A W C C ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Gain Flatness Collector Efficiency Input Return Loss Amplitude Pulse Droop Load Mismatch Stability Load Mismatch Tolerance BVCES ICES RTH POUT GP G c RL Droop VSWR-S VSWR-T 70 150 7.4 45 9 - Max 4.0 0.3 1.25 0.5 1.5:1 3:1 Units V mA C/W W dB dB % dB dB IC = 10 mA VCE = 40V Test Conditions VCC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) 1200 1300 1400 Z IF () 1.7 - j1.8 1.6 - j1.3 1.4 - j1.0 Z OF () 2.0 - j2.3 1.95 - j2.0 1.8 - j1.85 TEST FIXTURE INPUT CIRCUIT 50 Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50 1 |
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