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RF Power Field Effect Transistor LDMOS, 2110 -- 2170 MHz, 90W, 28V
4/6/2005
Preliminary
MAPLST2122-090CF
Features
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power amplifier applications. 90W Output Power at P1dB (CW) 11dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Output Power: 12W (typ.) Gain: 12dB (typ.) Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz)
Package Style
MAPLST2122-090CF
Maximum Ratings
Parameter Drain--Source Voltage Gate--Source Voltage Drain Current -- Continuous Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS ID PD TSTG TJ Rating 65 20 20 206 -40 to +150 +200 Units Vdc Vdc Adc W C C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.85 Unit C/W
NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 2110 -- 2170 MHz, 90W, 28V
MAPLST2122-090CF
4/6/2005
Preliminary
Characteristic DC CHARACTERISTICS @ 25C Characteristic Drain-Source Breakdown Voltage OFF(VGS = 0 Vdc, ID = 100 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = 0) DS GS Gate--Source Leakage Leakage Zero Gate Voltage DrainCurrent Current (VGS = 5 Vdc, V (VDS = 26Vdc, VDS ==0) 0) GS Gate Threshold Voltage Gate--Source Leakage Current (VDS = 10 Vdc, ID = 60 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS mA) (VDS = 28 Vdc, ID = 750 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Output Capacitance DYNAMIC CHARACTERISTICS (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2) FUNCTIONAL TESTS@ 25C (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Intermodulation (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Common-Source Amplifier Intermodulation (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output VSWR Tolerance (VDD = 28 Vdc, POUT = 90 W PEP. IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps -- 11 -- dB Coss Crss -- -- 98 4.5 -- -- pF pF Symbol Min Typ Max Unit
Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm
Min 65 -- -- -- -- -- 2 3 -- --
Typ -- -- -- -- -- 2.6 -- -- TBD 4.0
Max -- 101 11 1 4 5 -- --
Unit Vdc Adc Adc Adc Adc Vdc Adc Vdc Vdc S
EFF ()
--
33
--
%
IMD
--
-30
--
dBc
IRL
--
-13
--
dB
Gps
--
11
--
dB
EFF ()
--
33
--
%
IMD
--
-30
--
dBc
IRL
--
-13
-9
dB
No Degradation In Output Power Before and After Test
2
RF Power LDMOS Transistor, 2110 -- 2170 MHz, 90W, 28V
MAPLST2122-090CF
4/6/2005
Preliminary
C1 Tantalum Electrolytic Surface Mt. Cap., 22 F C2,C13 Ceramic Chip Capacitor, 0.1 F C3,C12 Ceramic Chip Capacitor, 1000 pF C4,C5,C9,C10,C11 Chip Capacitor, 8.2 pF ATC100B C6,C7 Chip Capacitor, 1.0 pF ATC100B C8 Chip Capacitor, 0.3 pF, ATC100B C14 Electrolytic Surface Mount Capacitor, 220 F J1,J2 SMA Connector, Omni Spectra 2052-5636-02
L1 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST2122-090CF R1 Chip Resistor, 10 Ohm 1/4 Watt R2 Chip Resistor, 100K Ohm 1/4 Watt Z1-Z7 Distributed Microstrip Element PC Board (74350133-01), Arlon Woven Glass Teflon .030" Thick, Er=2.54, 2 Oz Copper Both Sides
Figure 1. 2110--2170 MHz Test Fixture Schematic
Figure 2. 2110--2170 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 2110 -- 2170 MHz, 90W, 28V
MAPLST2122-090CF
4/6/2005
Preliminary
25
VDD = 28V, f = 2.17GHz, IDQ = 850mA, 3.84MHz BW, 16 DPCH
14 13 12
20 15 10 Efficiency (%)
Gain (dB)
11 10 9 8 7 6 27
Gain
Efficiency
5 0
32
37
42
POUT (dBm) Avg.
Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power
-30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 27 29 31 33 35 37 39 41 43
10MHz Offset 5MHz Offset VDD = 28V, f = 2.17GHz, IDQ = 850mA, 3.84MHz BW, 16 DPCH
ACPR (dBc)
POUT (dBm) Avg.
Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power
4
RF Power LDMOS Transistor, 2110 -- 2170 MHz, 90W, 28V
MAPLST2122-090CF
4/6/2005
Preliminary
Package Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information.
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