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Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH 42N170A IXBT 42N170A
VCES IC25 VCE(sat) tfi
= 1700 = 42 = 6.0 = 50
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125C RG = 10 non repetitive TC = 25C
Maximum Ratings 1700 1700 20 30 42 21 120 ICM = VCES = 90 1350 10 350 -55 ... +150 150 -55 ... +150 350 260 6 4 V V V V A A A A V s W C C C C C g g
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268
1.13/10Nm/lb.in.
Features High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Fast switching High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Substitutes for high voltage MOSFETs Advantages Lower conduction losses than MOSFETs High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 25C TJ = 125C 5.5 50 1.5 100 TJ = 125C 4.5 5.0 6.0 V V A mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 750 A, VCE = VGE
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2002 IXYS All rights reserved
98939 (7/02)
IXBH 42N170A IXBT 42N170A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 24 3700 VCE = 25 V, VGE = 0 V, f = 1 MHz 170 45 155 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 55 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 35 230 50 2.8 25 38 5.0 300 120 6 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.35 K/W
Dim.
e
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5.0 15 330 V A ns
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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