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PD - 94634A AUTOMOTIVE MOSFET IRF1404Z IRF1404ZS IRF1404ZL HEXFET(R) Power MOSFET D Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 40V RDS(on) = 3.7m S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max. 190 130 75 750 220 1.5 20 TO-262 IRF1404ZL Units A ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value EAS (Tested ) IAR EAR TJ TSTG Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw W W/C V mJ A mJ h 320 480 See Fig.12a, 12b, 15, 16 -55 to + 175 g i C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. Max. 0.65 --- 62 40 Units C/W i i --- 0.50 --- --- Junction-to-Ambient (PCB Mount) j www.irf.com 1 8/28/03 IRF1404ZS_L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 40 --- --- 2.0 170 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.033 2.7 --- --- --- --- --- --- 100 31 42 18 110 36 58 4.5 7.5 4340 1030 550 3300 920 1350 --- --- 3.7 4.0 --- 20 250 200 -200 150 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A e V V A VDS = VGS, ID = 250A VDS = 25V, ID = 75A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 3.0 VGS = 10V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 28 34 75 A 750 1.3 42 51 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF1404ZS_L 1000 TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 1000 TOP ID, Drain-to-Source Current (A) 100 10 ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 100 1 4.5V 20s PULSE WIDTH Tj = 25C 4.5V 10 20s PULSE WIDTH Tj = 175C 10 100 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) T J = 25C T J = 175C 100 T J = 175C 160 120 T J = 25C 80 10 40 VDS = 15V 20s PULSE WIDTH 0 0 40 80 120 160 1 4.0 5.0 6.0 7.0 VDS = 15V 20s PULSE WIDTH 8.0 9.0 10.0 11.0 VGS , Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRF1404ZS_L 8000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 20 VGS , Gate-to-Source Voltage (V) ID= 75A VDS= 32V VDS= 20V 16 6000 C, Capacitance (pF) Ciss 4000 12 8 2000 Coss Crss 4 0 1 10 100 0 0 40 80 120 160 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD, Reverse Drain Current (A) 100.0 T J = 175C ID, Drain-to-Source Current (A) 1000 10.0 T J = 25C 1.0 100 100sec 10 Tc = 25C Tj = 175C Single Pulse 0 1 10 1msec 0.1 0.2 0.6 1.0 VGS = 0V 1.4 1.8 1 10msec 100 1000 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1404ZS_L 200 2.0 160 ID , Drain Current (A) RDS(on) , Drain-to-Source On Resistance LIMITED BY PACKAGE ID = 75A VGS = 10V 1.5 80 (Normalized) 120 1.0 40 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1404ZS_L 600 EAS, Single Pulse Avalanche Energy (mJ) 15V TOP 500 VDS L DRIVER BOTTOM 31A 53A 75A ID 400 RG VGS 20V D.U.T IAS tp + V - DD A 300 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 4.0 ID = 250A 3.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.0 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF1404ZS_L 10000 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.05 10 0.10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF1404ZS_L Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs RD VDS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1404ZS_L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO LOT CODE PART NUMBER DAT E CODE www.irf.com 9 D2Pak Package Outline Dimensions are shown in millimeters (inches) IRF1404ZS_L D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L PART NUMBER F530S DAT E CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 10 www.irf.com IRF1404ZS_L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 11 IRF1404ZS_L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.11mH This value determined from sample failure population. 100% RG = 25, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . Repetitive rating; pulse width limited by TO-220AB package is not recommended for Surface Mount Application. Notes: Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/03 12 www.irf.com |
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