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| Composite Transistors XN04A88 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For amplification of low frequency output 4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6 1.50+0.25 -0.05 2.8+0.2 -0.3 Unit: mm 0.16+0.10 -0.06 q 3 2 1 (0.65) 0.30+0.10 -0.05 0.50+0.10 -0.05 s Basic Part Number of Element q 10 1.1+0.2 -0.1 1.1+0.3 -0.1 2SD0601A(2SD601A)+UNR111S(UN111S) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 60 50 7 100 200 -50 -50 -100 300 150 -55 to +150 Unit V V V mA mA V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini6-G1 Package Marking Symbol: IZ Internal Connection 6 5 4 Tr1 1 2 3 Tr2 Note) The Part number in the Parenthesis shows conventional part number. 0 to 0.1 5 q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.40.2 s Features 1 Composite Transistors XN04A88 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob fT Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = 0, f = 1MHz VCB = 10V, IE = -2mA, f = 200MHz 160 0.1 3.5 80 MHz min 60 50 7 0.1 0.1 460 0.3 V typ max Unit V V V A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) RBE fT VCB = -10V, IE = 2mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA -30% 4.7 100 20 - 0.25 +30% V k MHz min -50 -50 - 0.1 - 0.5 -2.0 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter resistance Transition frequency 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN04A88 Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 60 Ta=25C 50 200 240 VCE=10V Ta=25C IC -- I B 120 IC -- VBE VCE=10V 25C Collector current IC (mA) Collector current IC (mA) IB=160A 40 140A 30 120A 100A 20 80A 60A 10 40A 20A 0 0 2 4 6 8 10 160 Collector current IC (mA) Ta=75C 80 -25C 120 80 40 40 0 0 200 400 600 800 1000 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=10 IB -- VBE 1200 VCE=10V VCE=10V Ta=25C 1000 600 Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 500 400 Ta=75C 300 25C Base current IB (A) 10 100 1 800 0.1 Ta=75C -25C 0.01 25C 600 200 -25C 400 100 200 0.001 0.1 1 10 100 0 0.1 0 1 0 0.2 0.4 0.6 0.8 1.0 Collector current IC (mA) Collector current IC (mA) Base to emitter voltage VBE (V) 3 Composite Transistors Cob -- VCB 6 XN04A88 Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 4 3 2 1 0 1 10 100 Collector to base voltage VCB (V) Characteristics charts of Tr2 IC -- VCE -160 Ta=25C -140 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 150 hFE -- IC VCE=-10V Forward current transfer ratio hFE 125 25C 100 Collector current IC (mA) -120 -100 -80 -60 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -1 Ta=75C 75 -0.1 Ta=-25C 75C 50 -25C -40 -20 0 0 -2 -4 -6 -8 -0.4mA -0.3mA -0.2mA -0.1mA -10 -12 25C 25 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO -- VIN -10000 VO=-5V Ta=25C -100 VIN -- IO Collector output capacitance Cob (pF) VO=-0.2V Ta=25C Cob -- VCB 6 f=1MHz IE=0 Ta=25C 5 Output current IO (A) Input voltage VIN (V) -1000 -10 4 -100 -1 3 2 -10 -0.1 1 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -10 -100 0 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) Collector to base voltage VCB (V) 4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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