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| Composite Transistors XN6537 Silicon NPN epitaxial planer transistor Unit: mm For wide-band low-noise amplification 0.650.15 6 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.95 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SC3110 x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 15 12 2.5 30 50 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 7H Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Transition frequency Collector output capacitance Forward transfer gain Power gain Noise figure *1 (Ta=25C) Symbol ICBO IEBO hFE hFE (small/large)*1 fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 10mA VCE = 10V, IC = 10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 20mA, f = 0.8GHz VCE = 10V, IC = 20mA, f = 0.8GHz VCE = 10V, IC = 5mA, f = 0.8GHz 12 14 1.3 40 0.5 0.99 4.5 1.2 GHz pF dB dB dB min typ max 100 1 Unit nA A Ratio between 2 elements 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors PT -- Ta 500 XN6537 IC -- VCE 30 Ta=25C 60 VCE=10V 50 25C IC -- VBE Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400 25 20 300 IB=300A 250A 200A 40 Ta=75C -25C 15 30 200 10 150A 100A 20 100 5 50A 0 0 40 80 120 160 10 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 240 VCE=10V 8 fT -- IC VCE=10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 200 Transition frequency fT (GHz) 10 30 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE 6 160 Ta=75C 120 25C 80 -25C 40 4 25C Ta=75C -25C 0.3 1 3 10 30 100 2 0 0.1 0.3 1 3 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 1.2 NF -- IC f=1MHz IE=0 Ta=25C S11, S22 0.8 1 8 7 Rg=50 VCE=10V f=800MHz 0.2 0.6 0.4 Collector output capacitance Cob (pF) 1.5 2 VCE=10V IC=20mA E: earth 3 4 5 10 1.0 0.8 Noise figure NF (dB) 6 5 0 .2 .4 .6 .8 1 800MHz 500MHz 1.5 2 1000MHz 345 S22 800MHz 500MHz 10 -10 -5 -4 0.6 4 3 2 1 1000MHz S11 -0.2 0.4 -0.4 -0.6 -0.8 -1 -2 -1.5 -3 0.2 0 1 3 10 30 100 0 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) 2 Composite Transistors S12, S21 +90 +120 S21 500MHz 800MHz 1000MHz 180 -10 -15 -20 -25 -30 500MHz +60 1000MHz 800MHz VCE=10V IC=20mA E: earth XN6537 +150 +30 5 10 15 S12 20 0 -150 -30 -120 -90 -60 3 |
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