 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications Unit: mm * * * High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E C E JEDEC G (B) 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting Weight: 465 g (typ.) Rating 1200 20 400 800 400 800 2650 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque A W C C V N*m 1 2003-12-19 MG400Q1US65H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon Eoff IF = 400 A, VGE = 0 IF = 400 A, VGE = -10 V Transistor stage Diode stage Inductive load VCC = 600 V, IC = 400 A VGE = 15 V, RG = 2.4 Tc = 125C Inductive load VCC = 600 V, IC = 400 A VGE = 15 V, RG = 2.4 Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 400 mA, VCE = 5 V IC = 400 A, VGE = 15 V Tc = 25C Tc = 125C Min 4.0 Typ. 3.0 3.6 34000 0.05 0.05 0.10 0.55 0.05 0.60 2.4 0.25 40 40 Max 500 4.0 7.0 4.0 0.15 3.5 0.047 0.1 mJ V s C/W s Unit nA mA V V pF VCE = 10 V, VGE = 0, f = 1 MHz Note: Switching time measurement circuit and input/output waveforms RG -VGE IC RG IF VGE 0 90% 10% trr L VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton tr 90% 90% 2 2003-12-19 MG400Q1US65H IC - VCE (sat) 800 20 V 12 V 15 V 10 V 800 IC - VCE (sat) 20 V 18 V 15 V 12 V 10 V IC (A) IC (A) Collector current PC = 2650 W 600 18 V 600 Collector current 400 400 VGE = 8 V 200 200 VGE = 8 V Common emitter Tc = 25C 2 4 6 8 10 0 0 0 0 Common emitter Tc = 125C 2 4 6 8 10 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) VCE - VGE 16 VCE - VGE (V) Common emitter Tc = 25C 16 Common emitter Tc = 125C VCE (V) 12 VCE Collector-emitter voltage 12 Collector-emitter voltage 8 8 IC = 800 A 4 400 A 200 A 0 0 IC = 800 A 4 400 A 200 A 0 0 4 8 12 16 20 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 800 Common emitter VCE = 5 V 800 Common cathode VGE = 0 IF - VF IC (A) Collector current 400 Tc = 125C Forward current IF (A) 600 600 400 Tc = 125C 200 200 25C -40C 25C 0 0 4 8 12 16 0 0 1 2 3 4 Gate-emitter voltage VGE (V) Forward voltage VF (V) 3 2003-12-19 MG400Q1US65H Switching time - IC 1 : Tc = 25C : Tc = 125C Common emitter VCC = 600 V VGE = 15 V RG = 2.4 ton tr 0.1 td (on) 1 Switching time - IC toff td (off) (s) Switching time Switching time (s) 0.1 tf Common emitter VCC = 600 V VGE = 15 V RG = 2.4 : Tc = 25C : Tc = 125C 100 1000 1000 0.01 10 0.01 10 100 Collector current IC (A) Collector current IC (A) Switching time - RG 1 td (on) tr ton 10 Switching time - RG (s) (s) toff 1 td (off) Switching time 0.1 Switching time tf 0.1 Common emitter VCC = 600 V IC = 400 A VGE = 15 V 20 30 40 0.01 0 : Tc = 25C : Tc = 125C 10 20 Common emitter VCC = 600 V IC = 400 A VGE = 15 V 30 40 0.01 0 : Tc = 25C : Tc = 125C 10 Gate resistance RG () Gate resistance RG () Switching loss - IC 100 : Tc = 25C : Tc = 125C 1000 Eon Switching loss - RG Common emitter VCC = 600 V IC = 400 A VGE = 15 V Eon Switching loss (mJ) Switching loss (mJ) Eoff 100 Eoff Edsw 10 10 Edsw : Tc = 25C : Tc = 125C 1 0 1 0 Common emitter VCC = 600 V VGE = 15 V RG = 2.4 100 200 300 400 500 10 20 30 40 Collector current IC (A) Gate resistance RG () 4 2003-12-19 MG400Q1US65H VCE, VGE - QG 1600 Common emitter 16 RL = 1.5 Tc = 25C 1200 VCE = 0 800 200 V 400 V 600 V 400 4 8 12 100000 C - VCE Cies VCE (V) VGE (V) (pF) Coes 10000 Cres Collector-emitter voltage Gate-emitter voltage Capacitance C 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25C 100 0.01 0 0 800 1600 2400 3200 4000 0.1 1 10 100 Charge QG (nC) Collector-emitter voltage VCE (V) Short circuit SOA 6 1000 Reverse bias SOA 5 (x times) IC (A) Collector current VCC < 900 V = 100 4 Collector current 3 10 2 1 1 Tj < 125C = tw = 5 s Tj < 125C = VGE = 15 V RG = 2.4 0 0 200 400 600 800 1000 1200 1400 0.1 0 500 1000 1500 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Rth (t) - tw 1 Transient thermal resistance Rth (t) (C/W) Diode stage 0.1 Transistor stage 0.01 Tc = 25C 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 5 2003-12-19 MG400Q1US65H RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2003-12-19 |
Price & Availability of MG400Q1US65H
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |