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| PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 50N20P IXTA 50N20P IXTP 50N20P VDSS ID25 RDS(on) = 200 V = 50 A = 60 m TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 200 200 20 V V V A A A mJ J V/ns TO-263 (IXTA) 360 -55 ... +175 175 -55 ... +125 W C C C C C G = Gate S = Source G S (TAB) D = Drain TAB = Drain G DS (TAB) G D S (TAB) TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C 50 120 50 30 1.0 10 TO-220 (IXTP) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220) 300 260 Features 1.13/10 Nm/lb.in. 5.5 4 3 g g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Md Weight Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C Characteristic Values Min. Typ. Max. 200 2.5 5.0 100 25 250 50 60 V V nA A A m PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. VGS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS99156A(04/04) IXTA 50N20P IXTP 50N20P IXTQ 50N20P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 12 23 2250 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 125 26 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 10 (External) 35 70 30 70 VGS= 10 V, VDS = 0.5 VDSS, ID = IT 17 37 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 K/W K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 50 A pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 50 120 1.5 180 2.0 A A V ns C TO-220 (IXTA) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V Notes: Test current IT = 50 A. TO-263 (IXTP) Outline Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 50N20P IXTP 50N20P IXTQ 50N20P Fig . 1. Ou tp u t C h ar acte r is tics @ 25C 50 45 40 35 V G S = 10V 9V 100 90 80 70 9V V GS = 10V Fig . 2. Exte n d e d Ou tp u t C h ar acte r is tics @ 25C I D - Amperes 30 25 20 15 10 5 0 0 0 .5 1 1.5 2 I D - Amperes 8V 60 50 40 30 20 7V 6V 0 2 4 6 8 10 S 8V 7V 6V 10 0 2.5 3 3.5 VD S - V olts VD - V olts 12 14 16 18 20 Fig . 3. Ou tp u t C h ar acte r is tics @ 150C 50 45 40 V G S = 1 0V 9V Fig . 4. RD S(o n ) No r m aliz e d to 0.5 I D 25 V alu e vs . Ju n ctio n T e m p e r atu r e 3.1 2.8 V GS = 10V I D - Amperes 35 30 25 20 15 10 5 0 0 1 2 3 6V 5V 4 5 6 7 8 7V 8V R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 I D = 25A 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 175 I D = 50A VD S - V olts TJ - Degrees Centigrade Fig . 5. R D S( o n ) No r m aliz e d to 4. 2 3. 8 0.5 I D 25 V alu e vs . I D V G S = 1 0V 55 50 45 Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e R D S ( o n ) - Normalized 3. 4 2. 6 2. 2 1. 8 1. 4 1 0. 6 0 10 20 30 T J = 2 5 C T J = 1 25 C I D - Amperes 3 TJ = 1 75 C 40 35 30 25 20 15 10 5 0 I D - A mperes 40 50 60 70 80 90 100 -50 -25 0 TC - Degrees Centigrade 25 50 75 100 125 150 175 (c) 2004 IXYS All rights reserved IXTA 50N20P IXTP 50N20P IXTQ 50N20P Fig . 7. In p u t A d m ittan ce 90 80 70 36 32 28 Fig . 8. T r an s co n d u ctan ce g f s - Siemens I D - Amperes 60 50 40 30 20 10 0 5 6 7 8 9 10 TJ = 150C 25C -40C 24 20 16 12 8 4 0 0 20 40 60 80 T J = -40 C 2 5C 1 50 C 10 0 1 20 V G S - V olts I D - A mperes Fig . 9. So u r ce C u r r e n t vs . So u r ce -T o -Dr ain V o ltag e 150 Fig . 10. Gate C h ar g e 10 9 V D S = 1 00 V I D = 2 5A I G = 1 0m A 125 8 7 I S - Amperes V G S - Volts TJ = 150C TJ = 25C 100 6 5 4 3 2 1 0 75 50 25 0 0.4 0.6 0. 8 V S D - V olts 1 1. 2 1. 4 0 10 20 30 G 40 50 60 70 Q - nanoCoulombs Fig . 11. C ap acitan ce 10000 f = 1MH z 10 00 Fig . 12. Fo r w ar d -Bias Saf e Op e r atin g A r e a T J = 1 75 C Capacitance - picoFarads C is s R D S( on) Lim it T C = 2 5C I D - Amperes 1 00 25 s 10 0s 1m s 10 DC 10 m s 1000 C os s C rs s 100 0 5 10 15 1 VD 20 S - V olts 25 30 35 40 10 VD 10 0 S - V olts 10 00 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 50N20P IXTP 50N20P IXTQ 50N20P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 0.45 0.40 0.35 R ( t h ) J C - C / W 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 1000 Pu ls e W id th - m illis e c o n d s (c) 2004 IXYS All rights reserved |
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