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| IRFY9140C MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 123 12.07 (0.500) 19.05 (0.750) -100V -12A 0.21 10.41 (0.410) 10.92 (0.430) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC * HERMETICALLY SEALED TO-257AA METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE TO-257AA - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RJC RJA Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 20V -12A -8A -48A 60W 0.48W/C -55 to 150C 2.1C/W max. 80C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/95 IRFY9140C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = -12A VDS = 0.5BVDSS VDD = -50V ID = -12A RG = 9.1 ID = -12A ID = -8.2A ID = -12A ID = 250A IDS = -8.2A VDS = 0.8BVDSS TJ = 125C ID = 1mA Min. -100 Typ. Max. Unit V BVDSS Temperature Coefficient of Reference to 25C -0.09 0.21 0.24 -2 6.2 25 250 100 -100 1400 600 200 31 3.7 7 60 13 35.2 35 85 85 65 -12 -48 -4 V / C V S( A nA )( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS pF nC nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = -12A VGS = 0 IS = -12A TJ = 25C di / dt 100A/s VDD 50V (from 6mm down drain lead pad to centre of die) A V ns C TJ = 25C -4.2 280 3.6 8.7 8.7 nH (from 6mm down source lead to centre of source bond pad) Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/95 |
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