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om .c 4U et he aS at Applications Synchronous Buck .D High FrequencyComputer Processor Power Converters for w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification
l l l
PD - 95443A
IRFR3707ZPBF IRFU3707ZPbF
HEXFET(R) Power MOSFET
for Telecom and Industrial Use Lead-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
VDS VGS
ID @ TC = 25C IDM
ID @ TC = 100C PD @TC = 25C
PD @TC = 100C TJ TSTG
Thermal Resistance
RJC RJA RJA
m o .c U t4 e e h S ta a .D w w w
30V 9.5m:
D-Pak IRFR3707Z
Parameter Max.
30 20 Drain-to-Source Voltage Gate-to-Source Voltage V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 56f 39f 220 50 25 A
VDSS RDS(on) max
Qg
9.6nC
I-Pak IRFU3707Z
Units
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and
W
0.33
-55 to + 175
W/C C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Parameter
Typ.
--- --- ---
Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
gA
Notes through are on page 11
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om .c 4U et he aS 1 at .D w w w
Max.
3.0 50
Units
C/W
110
12/6/04
IRFR/U3707ZPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 71 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.023 7.5 10 1.80 -5.0 --- --- --- --- --- 9.6 2.6 0.90 3.5 2.6 4.4 5.8 8.0 11 12 3.3 1150 260 120 --- --- 9.5 12.5 2.25 --- 1.0 150 100 -100 --- 14 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 12A S nA V mV/C A V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
e e
VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 12A
See Fig. 16 VDS = 15V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 12A Clamped Inductive Load
e
= 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 42 12 5.0 Units mJ A mJ
--- --- --- --- --- --- --- --- 25 17
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time 1.0 38 26 V ns nC 220
Min. Typ. Max. Units
56f A
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VDD = 15V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3707ZPbF
10000
TOP
1000
VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V
TOP VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10 1 0.1
10
2.2V
1
2.2V
0.01 0.001 0.1 1 10
20s PULSE WIDTH Tj = 25C
0.1 0.1
20s PULSE WIDTH Tj = 175C
1 10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
100
ID = 30A VGS = 10V
T J = 175C
1.5
10
1
1.0
0.1
TJ = 25C VDS = 10V 20s PULSE WIDTH
0.01 0 2 4 6 8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRFR/U3707ZPbF
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
6.0 ID= 12A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 24V VDS= 15V
C, Capacitance(pF)
4.0
1000
Ciss
3.0
Coss
2.0
1.0
Crss
100 1 10 100
0.0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00 T J = 175C 10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec 1msec
1.00
TJ = 25C
1 Tc = 25C Tj = 175C Single Pulse 0.1 0 1 10 10msec
VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFR/U3707ZPbF
60 50
ID, Drain Current (A)
2.5
Limited By Package
VGS(th) Gate threshold Voltage (V)
40 30
2.0
ID = 250A
1.5
20
10
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05
0.1
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J
Ri (C/W) i (sec) 0.823 0.000128 1.698 0.481 0.000845 0.016503
1
2
0.01
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3707ZPbF
15V
200
EAS , Single Pulse Avalanche Energy (mJ)
180 160 140 120 100 80 60 40 20 0 25 50 75 100
VDS
L
DRIVER
ID TOP 3.7A 5.6A BOTTOM 12A
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
125
150
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy vs. Drain Current
I AS
LD VDS
Fig 12b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
50K 12V .2F .3F
Current Regulator Same Type as D.U.T.
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
VDS
90%
VGS
3mA
10%
IG ID
Current Sampling Resistors
VGS
td(on) tr td(off) tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
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IRFR/U3707ZPbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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IRFR/U3707ZPbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by;
* Ploss = Pconduction + P + Poutput drive
Ploss = Irms x Rds(on)
+ ( g x Vg x f ) Q
(
2
)
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q1.
Ploss = (Irms 2 x Rds(on ) ) Qgd +I x x Vin x ig + (Qg x Vg x f ) + Qoss x Vin x f 2 Qgs 2 f + I x x Vin x f ig
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage.
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
8
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IRFR/U3707ZPbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRF U120 12 916A 34
AS SEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRF U120 12 34
DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE
AS SEMBLY LOT CODE
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IRFR/U3707ZPbF
I-Pak (TO-251AA) Package Outline
(Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRF U120 WITH AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN THE AS S EMBLY LINE "A" Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 919A 56 78
AS S EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
PART NUMBE R INT ERNAT IONAL RECTIF IER LOGO
IRFU120 56 78
AS SEMBLY LOT CODE
DATE CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WE EK 19 A = ASS EMBLY SIT E CODE
10
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IRFR/U3707ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.58mH, RG = 25, IAS = 12A. Pulse width 400s; duty cycle 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
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