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AP3801GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic RoHS Compliant SO-8 S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S S -30V 70m -5A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 20 -5 -4 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 200511051-1/4 AP3801GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 7 6 1.3 3 7 6 20 4 410 95 65 6.5 Max. Units 70 105 -3 -1 -25 100 10 660 10 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-5A VDS=-25V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-1.9A, VGS=0V IS=-5A, VGS=0V, dI/dt=100A/s Min. - Typ. 19 12 Max. Units -1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. 2/4 AP3801GM 30 30 T A =25 C o -ID , Drain Current (A) -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V T A =150 C o -10V -7.0V -5.0V 20 20 -4.5V 10 10 V G =-3.0V V G =-3.0V 0 0 2 4 6 8 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 225 1.8 I D =-3A Normalized RDS(ON) 175 T A =25 C o I D =-5A V G = -10V 1.4 RDS(ON) (m) 125 1.0 75 25 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 5 4 Normalized -VGS(th) (V) 1.2 3 -IS(A) T j =150 o C 2 T j =25 o C 0.8 1 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP3801GM f=1.0MH 16 1000 -VGS , Gate to Source Voltage (V) 12 I D = -5A V DS = -25V C iss C (pF) 8 100 C oss C rss 4 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms 0.2 0.1 0.1 0.05 -ID (A) 1 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 125/W 0.1 T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =-5V 15 VG QG T j =25 o C T j =150 o C -ID , Drain Current (A) -4.5V QGS QGD 10 5 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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