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| EML11 / UML11N Transistors General purpose transistor (isolated transistor and diode) EML11 / UML11N 2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package. Applications DC / DC converter Motor driver External dimensions (Unit : mm) EMT5 1.6 0.5 1pin mark Features 1) Tr2: Small Signal Transistor Di1: Low VF 2) Small package 1.0 0.5 0.5 (5) (4) 1.6 1.2 (1) (2) (3) 0.22 0.13 Each lead has same dimensions Structure Silicon epitaxial planar transistor Schottky barrier diode Abbreviated symbol : L11 ROHM : EMT5 The following characteristics apply to both Di1 and Tr2. UMT5 2.0 1.3 0.65 0.65 0.9 0.7 Equivalent circuit (EML11 / UML11N) (5) (4) 1pin mark (5) (4) 1.25 (1) (2) (3) 2.1 0.2 0.15 Di1 Tr2 Each lead has same dimensions Abbreviated symbol : L11 (1) (2) (3) ROHM : UMT5 EIAJ : SC-88A Packaging specifications Type EML11 EMT5 L11 T2R 8000 UML11N UMT5 L11 TR 3000 Package Marking Code Basic ordering unit(pieces) Rev.B 0.1Min. 1/4 EML11 / UML11N Transistors Absolute maximum ratings (Ta=25C) Di1 Parameter Symbol IO Average rectified forward current IFSM Forward current surge peak (60HZ, 1) VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Symbol VCBO VCEO VEBO IC PD Tj Limits -60 -50 -6 -150 120 150 Unit V V V mA mW C Each terminal mounted on a recommended. Di1 / DTr2 Parameter Power dissipation Storage temperature Limits Symbol 150 Pd -55 to +125 Tstg Unit mW C Each terminal mounted on a recommended. Electrical characteristics (Ta=25C) Di1 Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. 0.40 4.0 Max. 0.50 30 Unit V A IF=200mA VR=10V Conditions Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -6 - - - 180 - - Typ. - - - - - - - 140 4.0 Max. - - - -100 -100 -500 390 - 5.0 Unit V V V nA nA mV - MHz pF IC=-50A IC=-1mA IE=-50A VCB=-60V VEB=-6V IC/IB=-50mA/-5mA VCE=-6V, IC=-1mA VCE=-12V, IE=2mA, f=100MHz VCB=-12V, IE=0A, f=1MHz Conditions Rev.B 2/4 EML11 / UML11N Transistors Electrical characteristic curves Di1 1000 100000 100 Ta=125 Ta=75 Ta=25 Ta=-25 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75 1 0.1 0.01 1000 100 10 1 0.1 0.01 Ta=-25 Ta=25 0.001 0 100 200 300 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 500 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=125 10000 10 0 10 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Tr2 -50 COLLECTOR CURRENT : Ic (mA) -40C COLLECTOR CURRENT : IC (mA) -31.5 -28.0 -24.5 COLLECTOR CURRENT : IC (mA) Ta = 100C 25C -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 VCE = -6V -10 -35.0 Ta = 25C -100 Ta = 25C -500 -450 -400 -350 -300 -8 -80 -6 -21.0 -17.5 -60 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A IB = 0 -20 -50A IB = 0 0 -1 -2 -3 -4 -5 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 -1.6 -2.0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) 500 Ta = 25C VCE = -5V -3V -1V DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 Ta = 100C 25C 200 Ta = 25C DC CURRENT GAIN : hFE -0.5 200 -40C -0.2 100 100 IC/IB = 50 -0.1 20 10 50 50 -0.05 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Rev.B 3/4 EML11 / UML11N Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 Ta = 25C VCE = -12V 20 Cib 10 -0.5 500 Ta = 25C f = 1MHz IE = 0A IC = 0A Co b -0.2 200 5 -0.1 Ta = 100C 25C -40C 100 2 -0.05 50 0.5 1 2 5 10 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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