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| VISHAY S330D Vishay Semiconductors Standard Avalanche Sinterglass Diode Features * * * * Controlled avalanche characteristics Glass passivated junction Low reverse current Hermetically sealed package Applications High voltage Power supplies 949539 Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part S330D Type differentiation VR = 1000 V; IFAV = 2 A SOD-57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Average forward current Max. pulse energy in avalanche mode, non repetitive (inductive load switch off) Junction and storage temperature range Test condition see electrical characteristics tp = 10 ms, half-sinewave Tamb = 50 C, l = 10 mm I(BR)R = 1 A, inductive load Symbol VR = VRRM IFSM IFAV ER Value 1000 50 2.0 20 Unit V A A mJ Tj = Tstg - 55 to + 175 C Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition Lead length l = 10 mm, TL = constant Symbol RthJA Value 45 Unit K/W Document Number 86053 Rev. 1.5, 11-Aug-04 www.vishay.com 1 S330D Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse breakdown voltage Reverse recovery time IF = 1 A IF = 10 A VR = VRRM VR = VRRM, Tj = 100 C IR = 100 A IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Symbol VF VF IR IR V(BR)R trr 1300 4 Min Typ. Max 1 1.65 5 50 VISHAY Unit V V A A V s Typical Characteristics (Tamb = 25 C unless otherwise specified) RthJA -Therm.Resist. Junction/ Ambient ( K/W) 120 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 l 10000 1000 IR (A) 100 10 1 25 17213 50 75 100 125 150 175 94 9090 l - Lead Length ( mm ) T (C) J Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Reverse Current vs. Junction Temperature 3.0 I FAV -Average Forward Current( A ) 40 35 2.5 30 2.0 1.5 1.0 0.5 0.0 0 20 CD(pF) RthJA=45K/W l=10mm 25 20 15 10 5 17212 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature(C ) 0 0.1 17214 1 10 100 VR (V) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 Document Number 86053 Rev. 1.5, 11-Aug-04 VISHAY S330D Vishay Semiconductors 100 0.5 0.45 10 0.4 T T =175 C J T =25 C J 0.35 P ( W) R 1 0.3 0.25 0.2 0.15 PR-Limit @100%V R I F (A) 0.1 0.01 0.1 0.05 PR-Limit @80%V R 0.001 17215 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 3.5 4.0 17216 0 25 50 75 100 125 Tj ( C ) 150 175 Figure 5. Typ. Forward Current vs. Forward Voltage Figure 6. Max. Reverse Power Dissipation vs. Junction Temperature Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 Cathode Identification 3.6 (0.140)max. ISO Method E 94 9538 0.82 (0.032) max. 26(1.014) min. 4.0 (0.156) max. 26(1.014) min. Document Number 86053 Rev. 1.5, 11-Aug-04 www.vishay.com 3 S330D Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86053 Rev. 1.5, 11-Aug-04 |
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