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FEATURES

LT5571 620MHz - 1100MHz High Linearity Direct Quadrature Modulator DESCRIPTION
The LT(R)5571 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal using differential baseband I and Q signals. It supports RFID, GSM, EDGE, CDMA, CDMA2000, and other systems. It may also be configured as an image reject upconverting mixer by applying 90 phase-shifted signals to the I and Q inputs. The high impedance I/Q baseband inputs consist of voltage-to-current converters that in turn drive double-balanced mixers. The outputs of these mixers are summed and applied to an on-chip RF transformer, which converts the differential mixer signals to a 50 singleended output. The four balanced I and Q baseband input ports are intended for DC-coupling from a source with a common-mode voltage at about 0.5V. The LO path consists of an LO buffer with single-ended input, and precision quadrature generators that produce the LO drive for the mixers. The supply voltage range is 4.5V to 5.25V.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.

Direct Conversion from Baseband to RF High Output: -4.2dB Conversion Gain High OIP3: 21.7dBm at 900MHz Low Output Noise Floor at 20MHz Offset: No RF: -159dBm/Hz POUT = 4dBm: -153.3dBm/Hz Low Carrier Leakage: -42dBm at 900MHz High Image Rejection: -53dBc at 900MHz 3-Ch CDMA2000 ACPR: -70.4dBc at 900MHz Integrated LO Buffer and LO Quadrature Phase Generator 50 AC-Coupled Single-Ended LO and RF Ports High Impedance DC Interface to Baseband Inputs with 0.5V Common Mode Voltage 16-Lead QFN 4mm x 4mm Package
APPLICATIONS

RFID Interrogators GSM, CDMA, CDMA2000 Transmitters Point-to-Point Wireless Infrastructure Tx Image Reject Up-Converters for Cellular Bands Low-Noise Variable Phase-Shifter for 620MHz to 1100MHz Local Oscillator Signals
TYPICAL APPLICATION
Direct Conversion Transmitter Application
5V VCC I-DAC V-I I-CH 0 EN Q-CH Q-DAC BASEBAND GENERATOR VCO/SYNTHESIZER V-I -80
5571 TA01a
CDMA2000 ACPR, AltCPR and Noise vs RF Output Power at 900MHz for 1 and 3 Carriers
-40 LT5571 100nF x2 RF = 620MHz TO 1100MHz ACPR, AltCPR (dBc) PA DOWNLINK TEST MODEL 64 DPCH 3-CH ACPR 3-CH AltCPR 1-CH ACPR -110 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
-50
-120
-60
-130
90
BALUN
-70 1-CH NOISE 1-CH AltCPR 3-CH NOISE -90 -30
-140
-150
-160 -10 -5 0 -25 -20 -15 RF OUTPUT POWER PER CARRIER (dBm)
5571 TA01b
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LT5571 ABSOLUTE MAXIMUM RATINGS
(Note 1)
PACKAGE/ORDER INFORMATION
TOP VIEW BBMI BBPI GND VCC 12 GND 17 11 RF 10 GND 9 5 BBMQ 6 GND 7 BBPQ 8 VCC GND
Supply Voltage .........................................................5.5V Common-Mode Level of BBPI, BBMI and BBPQ, BBMQ .......................................................0.6V Operating Ambient Temperature (Note 2) ............................................... -40C to 85C Storage Temperature Range................... -65C to 125C Voltage on any Pin Not to Exceed...................... -500mV to VCC + 500mV
Note: The baseband input pins should not be left floating.
16 15 14 13 EN 1 GND 2 LO 3 GND 4
UF PACKAGE 16-LEAD (4mm x 4mm) PLASTIC QFN TJMAX = 125C, JA = 37C/W EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
ORDER PART NUMBER LT5571EUF
UF PART MARKING 5571
Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL RF Output (RF) fRF S22, ON S22, OFF NFloor RF Frequency Range RF Frequency Range RF Output Return Loss RF Output Return Loss RF Output Noise Floor PARAMETER
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90 shifted (upper sideband selection). PRF(OUT) = -10dBm, unless otherwise noted. (Note 3)
CONDITIONS -3dB Bandwidth -1dB Bandwidth EN = High (Note 6) EN = Low (Note 6) No Input Signal (Note 8) POUT = 4dBm (Note 9) POUT = 4dBm (Note 10) 20 * Log (VOUT, 50/VIN, DIFF, I or Q) 1VP-P DIFF CW Signal, I and Q (Note 17) (Note 7) (Notes 13, 14) (Notes 13, 15) (Note 16) EN = High, PLO = 0dBm (Note 16) EN = Low, PLO = 0dBm (Note 16) MIN TYP 0.62 to 1.1 0.65 to 1.04 12.7 11.6 -159 -153.3 -152.9 -4.2 -0.2 -25.5 8.1 63.8 21.7 -53 -42 -61 MAX UNITS GHz GHz dB dB dBm/Hz dBm/Hz dBm/Hz dB dBm dB dBm dBm dBm dBc dBm dBm
GV POUT G3LO vs LO OP1dB OIP2 OIP3 IR LOFT
Conversion Voltage Gain Absolute Output Power 3 * LO Conversion Gain Difference Output 1dB Compression Output 2nd Order Intercept Output 3rd Order Intercept Image Rejection Carrier Leakage (LO Feedthrough)
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LT5571 ELECTRICAL CHARACTERISTICS
LO Input (LO) fLO PLO S11, ON S11, OFF NFLO GLO IIP3LO BWBB VCMBB RIN IDC, IN PLO-BB IP1dB GI/Q I/Q VCC ICC(ON) ICC(OFF) tON tOFF Enable Shutdown LO Frequency Range LO Input Power LO Input Return Loss LO Input Return Loss LO Input Referred Noise Figure LO to RF Small Signal Gain LO Input 3rd Order Intercept Baseband Bandwidth DC Common-Mode Voltage Differential Input Resistance Baseband Static Input Current Carrier Feedthrough on BB Input 1dB Compression Point I/Q Absolute Gain Imbalance I/Q Absolute Phase Imbalance Supply Voltage Supply Current Supply Current, Shutdown Mode Turn-On Time Turn-Off Time Input High Voltage Input High Current Input Low Voltage EN = High EN = 0V EN = Low to High (Note 11) EN = High to Low (Note 12) EN = High EN = 5V EN = Low 1 230 0.5 0.4 1.4 4.5 (Note 4) No Baseband Signal (Note 4) Differential Peak-to-Peak (Note 7) EN = High (Note 6) EN = Low (Note 6) at 900MHz (Note 5) at 900MHz (Note 5) at 900MHz (Note 5) -3dB Bandwidth Externally Applied (Note 4) -10 0.5 to 1.2 0 -10.9 -2.6 14.3 18.5 -4.8 400 0.5 90 -24 -42 2.9 0.013 0.24 5 97 5.25 120 100 0.6 5 GHz dBm dB dB dB dB dBm MHz V k A dBm VP-P,DIFF dB Deg V mA A s s V A V
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90 shifted (upper sideband selection). PRF(OUT) = -10dBm, unless otherwise noted. (Note 3)
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
Power Supply (VCC)
Enable (EN), Low = Off, High = On
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Specifications over the -40C to 85C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: V(BBPI) - V(BBMI) = 1VDC, V(BBPQ) - V(BBMQ) = 1VDC. Note 6: Maximum value within -1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency. Note 10: At 5MHz offset from the CW signal frequency. Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state. Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are -10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feed-through nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 * LO - BB versus the conversion gain at the desired signal at f = LO + BB for BB = 2MHz and LO = 900MHz.
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LT5571 TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) RF Output Power vs LO Frequency at 1VP-P Differential Baseband Drive
2 0 VOLTAGE GAIN (dB) 85C 100 25C 90 -40C RF OUTPUT POWER (dBm) SUPPLY CURRENT (mA) -2 -4 -6 -8 -10 80 4.50 -12 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G02
Supply Current vs Supply Voltage
110
Voltage Gain vs LO Frequency
-2 -4 -6 -8 -10 -12 -14 -16 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5558 G03
4.75 5.00 SUPPLY VOLTAGE (V)
5.25
5571 G01
Output IP3 vs LO Frequency
26 24 22 OIP3 (dBm) 20 18 16 14 12 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G04
Output IP2 vs LO Frequency
75 70 65 OIP2 (dBm) 60 55 50 45 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G05
Output 1dB Compression vs LO Frequency
10 8 6 4 2 0 -2 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G06
fBB, 1 = 2MHz fBB, 2 = 2.1MHz
fIM2 = fBB, 1 + fBB, 2 + fLO fBB, 1 = 2MHz fBB, 2 = 2.1MHz
LO Feedthrough to RF Output vs LO Frequency
-40 -40
2 * LO Leakage to RF Output vs 2 * LO Frequency
-45 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
OP1dB (dBm)
3 * LO Leakage to RF Output vs 3 * LO Frequency
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
LO FEEDTHROUGH (dBm)
2 * LO LEAKAGE (dBm)
3 * LO LEAKAGE (dBm)
-42
-50
-45
-55
-44 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G07
-50
-60
-46
-55
-65
-48 550
-60 1.1
1.3
1.5 1.7 1.9 2.1 2.3 2 * LO FREQUENCY (GHz)
2.5
5571 G08
-70 1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75 3 * LO FREQUENCY (GHz)
5571 G09
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LT5571 TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) LO and RF Port Return Loss vs Frequency
0 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C S11 (dB) LO PORT, EN = LOW -10 LO PORT, EN = HIGH, PLO = 0dBm
Noise Floor vs RF Frequency
-157 fLO = 900MHz (FIXED) NO BASEBAND SIGNAL IMAGE REJECTION (dBc) -30
Image Rejection vs LO Frequency
-158 NOISE FLOOR (dBm/Hz)
-35
-159
-40
-20
RF PORT, EN = LOW RF PORT, EN = HIGH, PLO = 0dBm RF PORT, EN = HIGH, NO LO LO PORT, EN = HIGH, PLO = -10dBm
-160 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250 RF FREQUENCY (MHz)
5571 G10
-45
-161
-30 -50
-162 550
-55 550
650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G11
-40 550
650 750 850 950 1050 1150 1250 FREQUENCY (MHz)
5571 G12
Absolute I/Q Gain Imbalance vs LO Frequency
0.3 ABSOLUTE I/Q PHASE IMBALANCE (DEG) ABSOLUTE I/Q GAIN IMBALANCE (dB) 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 3
Absolute I/Q Phase Imbalance vs LO Frequency
-2 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -4 -6 VOLTAGE GAIN (dB) -8 -10 -12 -14 -16 -18 0 550 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G14
Voltage Gain vs LO Power
0.2
2
0.1
1
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -12 -8 -4 0 4 LO INPUT POWER (dBm) 8
5571 G15
0 550
650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz)
5571 G13
-20 -20
Output IP3 vs LO Power
24 22 LO FEEDTHROUGH (dBm) 20 OIP3 (dBm) 18 16 14 12 10 -20 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C fBB, 1 = 2MHz fBB, 2 = 2.1MHz 4 -16 -12 -8 -4 0 LO INPUT POWER (dBm) 8
5571 G16
LO Feedthrough vs LO Power
-38 -40 -42 -44 -46 -48 -50 -20 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -12 -8 -4 0 4 LO INPUT POWER (dBm) 8
5571 G17
Image Rejection vs LO Power
-35
-40 IMAGE REJECTION (dBc)
-45
-50 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -12 -8 -4 0 4 LO INPUT POWER (dBm) 8
5571 G18
-55
-60 -20
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LT5571 TYPICAL PERFORMANCE CHARACTERISTICS
RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Temperature
0 -10 -20 HD2, HD3 (dBc) -30 -40 -50 -60 -70 -80 0 1 HD2 HD3 RF 20 10 RF CW OUTPUT POWER (dBm) 0 25C -10 85C -40C -20 -30 -10 RF -20 -30 HD2, HD3 (dBc) HD3 -40 -50 -60 -70 -80 0 1 0 RF CW OUTPUT POWER (dBm) 5V -10 5.5V 4.5V -20 -30 LO FEEDTHROUGH (dBm)
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Supply Voltage
10 -30 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
LO Feedthrough to RF Output vs CW Baseband Voltage
-35
HD2
-40 HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB -50 HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB -60 4 5 2 3
5571 G19
-40 HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB -50 HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB -60 2 3 4 5
5571 G20
-40
-45 0 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
5571 G21
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
Image Rejection vs CW Baseband Voltage
-46 -48 IMAGE REJECTION (dBc) -50 -52 -54 -56 -58 0 5 1 2 3 4 I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
5571 G22
RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Temperature
10 0 PTONE (dBm), IM2, IM3 (dBc) -10 -20 IM2 = POWER AT fLO + 4.1MHz -30 IM3 = MAX POWER AT fLO + 1.9MHz -40 OR fLO + 2.2MHz -50 -60 -70 -80 fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90 IM3 25C 85C -40C 10 0 PTONE (dBm), IM2, IM3 (dBc) RF -10
RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Supply Voltage
5V 5.5V 4.5V
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
RF IM3
IM2
-20 IM2 = POWER AT fLO + 4.1MHz -30 IM3 = MAX POWER AT fLO + 1.9MHz -40 OR fLO + 2.2MHz -50 -60 -70 -80
IM2
fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90
1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
5571 G23
1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
5571 G24
Voltage Gain Distribution
25 -40C 25C 85C VBB = 400mVP-P 25
Noise Floor Distribution (no RF)
-40C 25C 85C PERCENTAGE (%) 20
LO Leakage Distribution
-40C 25C 85C VBB = 400mVP-P
20 PERCENTAGE (%)
20 PERCENTAGE (%)
15
15
10
10
10
5
5
0 -6.5 -6 -5.5 -5 -4.5 -4 -3.5 -3 -2.5 -2 5571 G25 GAIN (dB)
0 -159.9
-159.6 -159.3 -159.0 NOISE FLOOR (dBm/Hz)
-158.7
5571 G26
0 <-50 -48 -46 -44 -42 -40 -38 -36 -34 5571 G27 LO LEAKAGE (dBm)
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LT5571 TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3) LO Feedthrough and Image Rejection vs Temperature After Calibration at 25C
LO FEEDTHROUGH (dBm), IR (dB) -40C 25C 85C -40 CALIBRATED WITH PRF = 0dBm fBBI = 2MHz, 0 fBBQ = 2MHz, 90 + CAL LO FEEDTHROUGH -60
Image Rejection Distribution
25 VBB = 400mVP-P
20 PERCENTAGE (%)
-50
15
10
-70
5
-80 IMAGE REJECTION -90 -40
0 <-60
-56
-52 -48 -44 -40 IMAGE REJECTION (dBc)
-36
5571 G28
-20
0 20 40 TEMPERATURE (C)
60
80
5571 G29
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable pin voltage is higher than 1V, the IC is turned on. When the Enable voltage is less than 0.5V or if the pin is disconnected, the IC is turned off. The voltage on the Enable pin should never exceed VCC by more than 0.5V, in order to avoid possible damage to the chip. GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9, 15 and the Exposed Pad 17 are connected to each other internally. Pins 2 and 4 are connected to each other internally and function as the ground return for the LO signal. Pins 10 and 12 are connected to each other internally and function as the ground return for the on-chip RF balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the Exposed Pad, Pin 17, should be connected to the printed circuit board ground plane. LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50 input impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPQ, BBMQ (Pins 7, 5): Baseband inputs for the Q-channel with about 90k differential input impedance. These pins should be externally biased at about 0.5V. Applied common mode voltage must stay below 0.6V. VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected to each other internally. 0.1F capacitors are recommended for decoupling to ground on each of these pins. RF (Pin 11): RF Output. The RF output is an AC-coupled single-ended output with approximately 50 output impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPI, BBMI (Pins 14, 16): Baseband inputs for the I-channel with about 90k differential input impedance. These pins should be externally biased at about 0.5V. Applied common mode voltage must stay below 0.6V. Exposed Pad (Pin 17): Ground. The Exposed Pad must be soldered to the PCB.
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LT5571 BLOCK DIAGRAM
VCC 8 BBPI 14 V-I BBMI 16 11 RF 0 90 BBPQ 7 BBMQ 5 V-I BALUN 1 EN 13
2
4 GND
6
9
3 LO
10
12
15
17
5571 BD
GND
APPLICATIONS INFORMATION
The LT5571 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an RF signal combiner/balun, an LO quadrature phase generator and LO buffers. External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ, BBMQ. These voltage signals are converted to currents and translated to RF frequency by means of double-balanced up-converting mixers. The mixer outputs are combined in an RF output balun, which also transforms the output impedance to 50. The center frequency of the resulting RF signal is equal to the LO signal frequency. The LO input drives a phase shifter which splits the LO signal into inphase and quadrature LO signals. These LO signals are then applied to on-chip buffers which drive the up-conversion mixers. Both the LO input and RF output are single-ended, 50-matched and AC-coupled. Baseband Interface The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present a differential input impedance of about 90k. At each of the four baseband inputs, a capacitor of 1.8pF to ground and a PNP emitter follower is incorporated (see Figure 1), which limits the baseband bandwidth to approximately 200MHz (-1dB point), if driven by a 50 source. The circuit is optimized for a common mode voltage of 0.5V which should be externally applied. The baseband input pins should not be left floating because the internal PNP's base current will pull the common mode voltage higher than the 0.6V limit. This condition may damage the part. The PNP's base current is about 24A in normal operation. On the LT5571 demo board, external 50 resistors to ground are added to each baseband input to prevent this condition and to serve as a termination resistance for the baseband connections. It is recommended that the I/Q signals be DC-coupled to the LT5571. An applied common mode voltage level at the I and Q inputs of about 0.5V will maximize the LT5571's dynamic range. Some I/Q generators allow setting the common mode voltage independently. For a 0.5V common mode voltage setting, the common-mode voltage of those generators must be set to 0.5V to create the desired 0.5V bias, when an external 50 is present in the setup (See Figure 2). The part should be driven differentially; otherwise, the evenorder distortion products will degrade the overall linearity severely. Typically, a DAC will be the signal source for the LT5571. A reconstruction filter should be placed between the DAC output and the LT5571's baseband inputs. In Figure 3 a typical baseband interface is shown, including a fifth-order low-pass ladder filter. For each baseband pin, a 0 to 1V swing is developed corresponding to a DAC output current of 0mA to 20mA. The maximum sinusoidal single side-band RF output power is about +5.8dBm for
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LT5571 APPLICATIONS INFORMATION
LT5571 RF VCC = 5V BALUN FROM Q-CHANNEL LOMI LOPI C
BBPI VCM = 0.5V BBMI 1.8pF 1.8pF
5571 F01
GND
Figure 1. Simplified Circuit Schematic of the LT5571 (Only I-Half is Drawn)
50 0.5VDC
50 0.5005VDC
LT5571
+ -
1VDC GENERATOR
50
+ -
1VDC GENERATOR
50 EXTERNAL LOAD
20ADC
5571 F02
Figure 2. DC Voltage Levels for a Generator Programmed at 0.5VDC for a 50 Load Without and with the LT5571 as a Load
LT5571 MAX RF +5.8dBm VCC 5V
C
BALUN FROM Q-CHANNEL LOMI LOPI
0mA TO 20mA R1A 100 DAC
L1A
L2A
0.5VDC
BBPI
R2A 100 C1 C2 L2B C3 R2B 100 0.5VDC BBMI GND GND
5571 F03
R1B 100
1.8pF 1.8pF
L1B
20mA TO 0mA
Figure 3. LT5571 Baseband Interface with 5th Order Filter and 0.5VCM DAC (Only I Channel is Shown)
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LT5571 APPLICATIONS INFORMATION
Table 1. Typical Performance Characteristics vs VCM for fLO = 900MHz, PLO = 0dBm
VCM (V) 0.1 0.2 0.25 0.3 0.4 0.5 0.6 ICC (mA) 55.3 65.3 70.3 75.7 86.4 97.1 108.1 GV (dB) -4.5 -3.9 -3.7 -3.6 -3.5 -3.6 -3.7 OP1dB (dBm) -1.5 2.0 3.4 4.5 6.3 7.9 8.4 OIP2 (dBm) 53.4 51.7 51.9 52.1 53.1 53.0 53.7 OIP3 (dBm) 9.2 11.2 13.3 15.6 18.7 20.6 22.1 NFloor (dBm/Hz) -163.6 -161.8 -161.2 -160.5 -159.6 -158.7 -157.9 LOFT (dBm) -53.6 -50.3 -49.0 -47.7 -45.3 -43.1 -41.2 IR (dBc) 37.0 40.4 43.5 43.9 45.1 45.4 45.6
full 0V to 1V swing on each baseband input (2VP-P,DIFF). This maximum RF output level is limited by the 0.5VPEAK maximum baseband swing possible for a 0.5VDC common-mode voltage level (assuming no negative supply bias voltage is available). It is possible to bias the LT5571 to a common mode voltage level other than 0.5V. Table 1 shows the typical performance for different common mode voltages. LO Section The internal LO input amplifier performs single-ended to differential conversion of the LO input signal. Figure 4 shows the equivalent circuit schematic of the LO input. The internal differential LO signal is split into in-phase and quadrature (90 phase shifted) signals to drive LO buffer sections. These buffers drive the double balanced I and Q mixers. The phase relationship between the LO input and the internal in-phase LO and quadrature LO signals is fixed, and is independent of start-up conditions. The phase shifters are designed to deliver accurate quadrature signals for an LO frequency near 900MHz. For frequencies significantly below 750MHz or above 1100MHz, the quadrature accuracy will diminish, causing the image rejection to degrade. The LO pin input impedance is about
VCC LO INPUT 20pF
50, and the recommended LO input power window is -2dBm to 2dBm. For PLO < -2dBm input power, the gain, OIP2, OIP3, dynamic-range (in dBc/Hz) and image rejection will degrade, especially at TA = 85C. Harmonics present on the LO signal can degrade the image rejection, because they introduce a small excess phase shift in the internal phase splitter. For the second (at 1.8GHz) and third harmonics (at 2.7GHz) at -20dBc level, the introduced signal at the image frequency is about -61dBc or lower, corresponding to an excess phase shift much less than 1 degree. For the second and third harmonics at -10dBc, still the introduced signal at the image frequency is about -51dBc. Higher harmonics than the third will have less impact. The LO return loss typically will be better than 11dB over the 750MHz to 1GHz range. Table 2 shows the LO port input impedance vs frequency.
Table 2. LO Port Input Impedance vs Frequency for EN = High and PLO = 0dBm
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 INPUT IMPEDANCE () 47.2 + j11.7 58.4 + j8.3 65.0 - j0.6 66.1 - j12.2 60.7 - j22.5 53.3 - j25.1 48.4 - j25.1 42.7 - j26.4 S11 Mag 0.123 0.108 0.131 0.173 0.221 0.239 0.248 0.285 Angle 97 40 -2 -31 -53 -69 -79 -89
ZIN 60
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Figure 4. Equivalent Circuit Schematic of the LO Input
The return loss S11 on the LO port can be improved at lower frequencies by adding a shunt capacitor. The input impedance of the LO port is different if the part is in shut-down mode. The LO input impedance for EN = Low is given in Table 3.
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LT5571 APPLICATIONS INFORMATION
Table 3. LO Port Input Impedance vs Frequency for EN = Low and PLO = 0dBm
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 INPUT IMPEDANCE () 35.6 + j42.1 65.5 + j70.1 163 + j76.3 188 - j95.2 72.9 - j114 34.3 - j83.5 21.6 - j63.3 16.4 - j50.5 S11 Mag 0.467 0.531 0.602 0.654 0.692 0.715 0.726 0.727 Angle 83 46 14 -13 -36 -56 -73 -86
For EN = Low the S22 is given in Table 6.
Table 6. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 OUTPUT IMPEDANCE () 21.5 + j5.0 26.9 + j11.8 36.5 + j16.0 48.8 + j11.2 52.8 - j2.2 46.6 - j11.5 39.7 - j13.9 35.0 - j13.0 S22 Mag 0.403 0.333 0.239 0.113 0.035 0.123 0.191 0.232 Angle 166 144 120 89 -38 -99 -117 -130
RF Section After up-conversion, the RF outputs of the I and Q mixers are combined. An on-chip balun performs internal differential to single-ended output conversion, while transforming the output signal impedance to 50. Table 4 shows the RF port output impedance vs frequency.
Table 4. RF Port Output Impedance vs Frequency for EN = High and PLO = 0dBm
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 OUTPUT IMPEDANCE () 22.2 + j5.2 28.4 + j11.7 38.8 + j14.3 49.4 + j6.8 49.4 - j5.8 42.7 - j11.7 36.9 - j12.6 33.2 - j11.3 S22 Mag 0.390 0.311 0.202 0.068 0.058 0.149 0.207 0.241 Angle 165 143 119 91 -92 -115 -128 -138
To improve S22 for lower frequencies, a series capacitor can be added to the RF output. At higher frequencies, a shunt inductor can improve the S22. Figure 5 shows the equivalent circuit schematic of the RF output. Note that an ESD diode is connected internally from the RF output to ground. For strong output RF signal levels (higher than 3dBm) this ESD diode can degrade the linearity performance if an external 50 termination impedance is connected directly to ground. To prevent this, a coupling capacitor can be inserted in the RF output line. This is strongly recommended during 1dB compression measurements.
VCC 21pF
RF OUTPUT
47
1pF
7nH
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The RF output S22 with no LO power applied is given in Table 5.
Table 5. RF Port Output Impedance vs Frequency for EN = High and No LO Power Applied
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 OUTPUT IMPEDANCE () 22.9 + j5.3 30.0 + j11.2 40.6 + j11.2 47.3 + j1.9 44.2 - j7.4 38.4 - j10.4 34.2 - j10.2 31.7 - j8.7 S22 Mag 0.377 0.283 0.160 0.034 0.099 0.175 0.221 0.246 Angle 165 143 123 145 -123 -131 -140 -148
Figure 5. Equivalent Circuit Schematic of the RF Output
Enable Interface Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5571 is 1V. To disable (shut down) the chip, the enable voltage must be below 0.5V. If the EN pin is not connected, the chip is disabled. This EN = Low condition is guaranteed by the 75k on-chip pull-down resistor. It is important that the voltage at the EN pin does not exceed VCC by more than 0.5V. If this should occur, the
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11
LT5571 APPLICATIONS INFORMATION
VCC EN 75k 25k
overheating. R1 (optional) limits the EN pin current in the event that the EN pin is pulled high while the VCC inputs are low. The application board PCB layouts are shown in Figures 8 and 9.
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Figure 6. EN Pin Interface
full chip supply current could be sourced through the EN pin ESD protection diodes, which are not designed for this purpose. Damage to the chip may result. Evaluation Board Figure 7 shows the evaluation board schematic. A good ground connection is required for the LT5571's Exposed Pad. If this is not done properly, the RF performance will degrade. Additionally, the Exposed Pad provides heat sinking for the part and minimizes the possibility of the chip
J1 BBIM R2 49.9 16 R1 100 VCC EN J4 LO IN 1 2 3 4 R5 49.9 15 14 13 C1 100nF J3 J2 BBIP VCC
Figure 8. Component Side of Evaluation Board
BBPI VCC 12 EN GND 11 GND RF 10 LT5571 LO GND 9 GND GND 17 GND BBMQ GND BBPQ VCC 5 6 7 8 C2 100nF
BBMI GND
RF OUT
J5 BBQM R3 49.9 BOARD NUMBER: DC944A
J6 BBQP
R4 49.9
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Figure 7. Evaluation Circuit Schematic Figure 9. Bottom Side of Evaluation Board
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LT5571 APPLICATIONS INFORMATION
Application Measurements The LT5571 is recommended for base-station applications using various modulation formats. Figure 10 shows a typical application. Figure 11 shows the ACPR performance for CDMA2000 using one and three channel modulation. Figures 12 and 13 illustrate the 1- and 3-channel CDMA2000 measurement. To calculate ACPR, a correction is made for the spectrum analyzer's noise floor (Application Note 99). If the output power is high, the ACPR will be limited by the linearity performance of the part. If the output power is low, the ACPR will be limited by the noise performance of the part. In the middle, an optimum ACPR is obtained. Because of the LT5571's very high dynamic-range, the test equipment can limit the accuracy of the ACPR measurement. Consult Design Note 375 or the factory for advice on ACPR measurement if needed.
8, 13 14 I-DAC 16 V-I I-CH EN 1 Q-CH V-I -90 -30 0 90 7 Q-DAC BASEBAND GENERATOR 5 BALUN 11 VCC LT5571
The ACPR performance is sensitive to the amplitude mismatch of the BBIP and BBIM (or BBQP and BBQM) input voltage. This is because a difference in AC voltage amplitude will give rise to a difference in amplitude between the even-order harmonic products generated in the internal V-I converter. As a result, they will not cancel out entirely. Therefore, it is important to keep the amplitudes at the BBIP and BBIM (or BBQP and BBQM) as equal as possible. LO feedthrough and image rejection performance may be improved by means of a calibration procedure. LO feedthrough is minimized by adjusting the differential DC offsets at the I and the Q baseband inputs. Image rejection can be improved by adjusting the amplitude and phase difference between the I and the Q baseband inputs. The LO feedthrough and Image Rejection can also change as a function of the baseband drive level, as depicted in Figure 14.
-40 DOWNLINK TEST MODEL 64 DPCH 3-CH ACPR 3-CH AltCPR 1-CH ACPR -110 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
ACPR, AltCPR (dBc)
5V 100nF x2 RF = 620MHz TO 1100MvHz PA
-50
-120
-60
-130
-70 1-CH NOISE -80 1-CH AltCPR 3-CH NOISE
-140
-150
-160 -10 -5 0 -25 -20 -15 RF OUTPUT POWER PER CARRIER (dBm)
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2, 4, 6, 9, 10, 12, 15, 17
3 VCO/SYNTHESIZER
Figure 10. 620MHz to 1.1GHz Direct Conversion Transmitter Application
Figure 11. CDMA2000 ACPR, ALTCPR and Noise vs RF Output Power at 900MHz for 1 and 3 Carriers
20 10 0 PRF, LOFT (dBm), IR (dBc) -10 -20 -30 -40 -50 -60 -70 -80 -90 904 906
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-30 -40 POWER IN 30kHz BW (dBm) -50 -60 -70 -80 -90 -100 -110 -120
DOWNLINK TEST MODEL 64 DPCH POWER IN 30kHz BW (dBm)
-30 -40 -50 -60 -70 -80 -90 -100 -110 -120
DOWNLINK TEST MODEL 64 DPCH
PRF
UNCORRECTED SPECTRUM
CORRECTED SPECTRUM
UNCORRECTED SPECTRUM
SPECTRUM ANALYSER NOISE FLOOR
25C 85C -40C IR
LO FT
SPECTRUM ANALYSER NOISE FLOOR 897.75 899.25 900.75 902.25 903.75 RF FREQUENCY (MHz)
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CORRECTED SPECTRUM 896 902 898 900 RF FREQUENCY (MHz)
-130 896.25
-130 894
fBBI = 2MHz, 0 VCC = 5V, fBBQ = 2MHz, 90 EN = HIGH, fRF = fBB + fLO fLO = 900MHz, PLO = 0dBm 0 1 2 3 4 I AND Q BASEBAND VOLTAGE (VP-P,DIFF) 5
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Figure 12. 1-Channel CDMA2000 Spectrum
Figure 13. 3-Channel CDMA2000 Spectrum
Figure 14. Image Rejection and LO FeedThrough vs Baseband Drive Voltage After Calibration at 25C
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LT5571 APPLICATIONS INFORMATION
Example: RFID Application Figure 15 shows the interface between a current drive DAC and the LT5571 for RFID applications. The SSB-ASK mode requires an I/Q modulator to generate the desired spectrum. According to [1], the LT5571 is capable of meeting the "Dense-Interrogator" requirements with reduced supply current. A VCM = 0.25V was chosen in order to save 30mA current, resulting in a modulator supply current of about 73mA. This is achieved by sourcing 5mADC average DAC current into 50 resistors R1A and R1B. As anti-aliasing filter, an RCRC filter was chosen using R1A, R1B, C1A, C1B, R2A, R2B, C2A and C2B. This results in a second-order passive low-pass filter with -3dB cutoff at 790kHz. This filter cutoff is chosen high enough that it will not affect
LT5571 RF VCC 5V BALUN FROM Q-CHANNEL LOMI R2A 250 0.25VDC BBPI C2A 470pF C2B 470pF 1.8pF 1.8pF LOPI
the RFID baseband signals in the fastest mode (TARI = 6.25s, see [1]) significantly, and at the same time achieving enough alias attenuation while using a 32MHz sampling frequency. The resulting Alt80-CPR (the alias frequency at 897.875MHz falls outside the RF frequency range of Figure 16a) is -92dBc for TARI = 6.25s. The SSB-ASK output signal spectrum is plotted in Figure 16a, together with the Dense-Interrogator Transmit mask [1] for TARI = 25s. The corresponding envelope representation is given in Figure 16b. The Alt1-CPR can be increased by using a higher VCM at the cost of extra supply current or a lower baseband drive at the cost of lower RF output power. The center frequency of the channel is chosen at 865.9MHz ("channel 2"), while the LO frequency is chosen at 865.875MHz.
C
0mA TO 10mA R1A 50 DAC R1B 50 10mA TO 0mA
0.25VDC C1A 2.2nF
C1B GND 2.2nF 0.25VDC
R2B 0.25VDC BBMI 250
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GND
Figure 15. Recommended Baseband Interface for RFID Applications (Only I Channel is Drawn)
0 POWER IN 3kHz BW (dBm), MASK (dBch) -10 RF OUTPUT VOLTAGE (V) -20 -30 -40 -50 -60 -70 -80 -90 -100 865.4 -0.3 865.6 865.8 866.0 866.2 FREQUENCY (MHz) 866.4 0 50 100 150 TIME (s) 200 250
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0.3 0.2 0.1 0 -0.1 -0.2
CH BANDWIDTH: 100kHz CH SPACING: 100kHz CH PWR: -4.85dBm ACP UP: -33.74dBc ACP LOW: -37.76dBc
ALT1 UP: -71.15dBc ALT1 LOW: -64.52dBc ALT2 UP: -72.80dBc ALT2 LOW: -72.42dBc
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Figure 16a and 16b. RFID SSB-ASK Spectrum with Mask and Corresponding RF Envelope for TARI = 25s
[1] EPC Radio Frequency Identity Protocols, Class-1 Generation-2 UHF RFID Protocol for Communications at 860MHz - 960MHz, version 1.0.9.
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LT5571 PACKAGE DESCRIPTION
UF Package 16-Lead Plastic QFN (4mm x 4mm) (Reference LTC DWG # 05-08-1692)
0.72 0.05
4.35 0.05 2.15 0.05 2.90 0.05 (4 SIDES)
PACKAGE OUTLINE 0.30 0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW--EXPOSED PAD 4.00 0.10 (4 SIDES) PIN 1 TOP MARK (NOTE 6) 2.15 0.10 (4-SIDES) 0.75 0.05 R = 0.115 TYP PIN 1 NOTCH R = 0.20 TYP OR 0.35 x 45 CHAMFER
15
16 0.55 0.20 1 2
(UF16) QFN 10-04
0.200 REF 0.00 - 0.05 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
0.30 0.05 0.65 BSC
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT5571 RELATED PARTS
Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator LT5517 40MHz to 900MHz Quadrature Demodulator LT5518 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer LT5521 10MHz to 3700MHz High Linearity Upconverting Mixer LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer LT5524 Low Power, Low Distortion ADC Driver with Digitally Programmable Gain LT5525 High Linearity, Low Power Downconverting Mixer LT5526 High Linearity, Low Power Downconverting Mixer LT5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator LT5558 600MHz to 1100MHz High Linearity Direct Quadrature Modulator LT5560 Ultra-Low Power Active Mixer LT5568 700MHz to 1050MHz High Linearity Direct Quadrature Modulator LT5572 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator RF Power Detectors LTC(R)5505 RF Power Detectors with >40dB Dynamic Range LTC5507 100kHz to 1000MHz RF Power Detector LTC5508 300MHz to 7GHz RF Power Detector LTC5509 300MHz to 3GHz RF Power Detector LTC5530 300MHz to 7GHz Precision RF Power Detector LTC5531 300MHz to 7GHz Precision RF Power Detector LTC5532 300MHz to 7GHz Precision RF Power Detector LT5534 50MHz to 3GHz Log RF Power Detector with 60dB Dynamic Range LTC5536 Precision 600MHz to 7GHz RF Power Detector with Fast Comparator Output LT5537 Wide Dynamic Range Log RF/IF Detector PART NUMBER Infrastructure LT5514 DESCRIPTION COMMENTS 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 21dBm IIP3, Integrated LO Quadrature Generator 22.8dBm OIP3 at 2GHz, -158.2dBm/Hz Noise Floor, 50 Single-Ended RF and LO Ports, 4-Channel W-CDMA ACPR = -64dBc at 2.14GHz 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control Single-Ended 50 RF and LO Ports, 17.6dBm IIP3 at 1900MHz, ICC = 28mA 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, -65dBm LO-RF Leakage IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA, Conversion Gain = 2dB. 21.8dBm OIP3 at 2GHz, -159.3dBm/Hz Noise Floor, 50, 0.5VDC Baseband Interface, 4-Channel W-CDMA ACPR = -66dBc at 2.14GHz 22.4dBm OIP3 at 900MHz, -158dBm/Hz Noise Floor, 3k, 2.1VDC Baseband Interface, 3-Ch CDMA2000 ACPR = -70.4dBc at 900MHz 10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter. 22.9dBm OIP3 at 850MHz, -160.3dBm/Hz Noise Floor, 50, 0.5VDC Baseband Interface, 3-Ch CDMA2000 ACPR = -71.4dBc at 850MHz 21.6dBm OIP3 at 2GHz, -158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = -67.7dBc at 2.14GHz 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Low Power Consumption, SC70 Package Precision VOUT Offset Control, Shutdown, Adjustable Gain Precision VOUT Offset Control, Shutdown, Adjustable Offset Precision VOUT Offset Control, Adjustable Gain and Offset 1dB Output Variation over Temperature, 38ns Response Time, Log Linear Response 25ns Response Time, Comparator Reference Input, Latch Enable Input, -26dBm to +12dBm Input Range Low Frequency to 1GHz, 83dB Log Linear Dynamic Range
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16 Linear Technology Corporation
(408) 432-1900 FAX: (408) 434-0507
LT 1206 * PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2006

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