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 HVC133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-423A(Z) Rev 1 September 1996 Features
* * * Low capacitance.(C1=1.0pF max) Low forward resistance. (rf=0.7 max) Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC133 Laser Mark P3 Package Code UFP
Outline
Cathode mark Mark 1
P3
2 1. Cathode 2. Anode
HVC133
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55A+125 Unit V mW C C
Electrical Characteristics (Ta = 25C)
Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 Typ Max Unit V nA V pF Test Condition IR = 1A VR = 25V IF = 2 mA VR = 1V, f = 1 MHz VR = 6V, f = 1 MHz IF = 2mA, f = 100 MHz
A\ A\ A\ A\ A\
0.55
A\
100 0.85 1.0 0.9 0.7
A\ A\ A\ A\ A\
HVC133
Main Characteristic
10
-2
10
-10
10
Forward current I F (A)
-4
10 10
-6
-11
Reverse current I R (A)
10
-12
10
-8
10
-10
10
-13
10
-12
0
0.2
0.4
0.6
0.8
1.0
10
-14
0
5
10
15
20
25
30
Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
10 f=1MHz
3
f=100MHz
Forward resistance r f ( )
10
Capacitance C (pF)
10
2
10
1.0
1.0
10 -1 10
-1
10 1.0 Reverse voltage VR (V) 10
-1
10
-5
10
-4
10
-3
10
-2
Forward current I F (A) Fig.4 Forward resistance Vs. Forward current
Fig.3 Capacitance Vs. Reverse voltage
HVC133
Package Dimensions
Unit : mm
Cathode Mark 1
P3
1.2 0.10 1.6 0.10
2 0.3 0.05 0.8 0.10
1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) UFP -- SC-79 0.0016 0.6 0.10


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