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| HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49291. Features * 43A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Avalanche Rated * Thermal Impedance SPICE Model Temperature Compensating SABERTM Model www.fairchildsemi.com * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER HGTG11N120CN HGTP11N120CN HGT1S11N120CNS PACKAGE TO-247 TO-220AB TO-263AB BRAND G11N120CN 11N120CN 11N120CN Packaging JEDEC STYLE TO-247 E COLLECTOR (BOTTOM SIDE METAL) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S11N120CNS9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) G COLLECTOR (FLANGE) G C E E JEDEC TO-263AB G E COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG11N120CN HGTP11N120CN HGT1S11N120CNS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 300 260 8 15 oC oC UNITS V A A A V V W W/oC mJ oC 1200 43 22 80 20 30 55A at 1200V 298 2.38 80 -55 to 150 s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 20A, L = 400H, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6.0 55 TYP 250 2.1 2.8 6.8 10.4 100 130 MAX 250 3 2.4 3.5 250 120 150 UNITS V V A A mA V V V nA A V nC nC Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 11A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 90A, VCE = VGE VGE = 20V TJ = 150oC, RG = 10, VGE = 15V, L = 400H, VCE(PK) = 1200V IC = 11A, VCE = 600V IC = 11A, VCE = 600V VGE = 15V VGE = 20V (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Thermal Resistance Junction To Case NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC IGBT and Diode at TJ = 150oC ICE = 11A VCE = 960V VGE = 15V RG = 10 L = 2mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 11A VCE = 960V VGE = 15V RG = 10 L = 2mH Test Circuit (Figure 18) MIN TYP 23 12 180 190 0.4 0.95 1.3 21 12 210 340 0.45 1.9 2.1 MAX 26 16 240 230 0.5 1.3 1.6 24 16 280 400 0.6 2.5 2.5 0.42 UNITS ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ oC/W Typical Performance Curves 45 ICE , DC COLLECTOR CURRENT (A) 40 35 30 25 20 15 10 5 0 25 50 75 100 Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 60 50 TJ = 150oC, RG = 10, VGE = 15V, L = 400H 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Typical Performance Curves 200 fMAX, OPERATING FREQUENCY (kHz) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) ISC , PEAK SHORT CIRCUIT CURRENT (A) 25 VCE = 840V, RG = 10, TJ = 125oC 250 TJ = 150oC, RG = 10, L = 2mH, V CE = 960V TC = 75oC, VGE = 15V, IDEAL DIODE 100 20 tSC 15 ISC 200 50 150 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.42oC/W, SEE NOTES 5 2 5 TC 75oC 75oC 110oC 110oC VGE 15V 12V 15V 12V 10 20 10 100 5 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) 50 16 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 50 TC = 25oC ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 TC = 25oC 40 40 TC = -55oC 30 TC = 150oC 20 30 TC = -55oC 20 TC = 150oC 10 DUTY CYCLE < 0.5%, VGE = 12V 250s PULSE TEST 0 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 DUTY CYCLE < 0.5%, VGE = 15V 250s PULSE TEST 0 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5 EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) RG = 10, L = 2mH, VCE = 960V 4 3.5 RG = 10, L = 2mH, VCE = 960V 3.0 2.5 2.0 1.5 1.0 TJ = 25oC, VGE = 12V OR 15V 0.5 0 0 5 10 15 20 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC, VGE = 12V, VGE = 15V TJ = 150oC, VGE = 12V OR 15V 3 2 1 TJ = 25oC, VGE = 12V, VGE = 15V 0 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Typical Performance Curves 40 RG = 10, L = 2mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns) 35 TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (ns) Unless Otherwise Specified (Continued) 50 RG = 10, L = 2mH, VCE = 960V 40 TJ = 25oC, TJ = 150oC, VGE = 12V 30 30 25 20 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 TJ = 25oC OR TJ = 150oC, VGE = 15V 0 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 500 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 10, L = 2mH, VCE = 960V 450 700 RG = 10, L = 2mH, V CE = 960V 600 400 tfI , FALL TIME (ns) 350 300 250 200 150 100 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 200 VGE = 12V, VGE = 15V, TJ = 25oC 100 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 12V OR 15V VGE = 12V, VGE = 15V, TJ = 150oC 500 400 300 TJ = 150oC, VGE = 12V OR 15V FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE < 0.5%, VCE = 20V 250s PULSE TEST 80 VGE , GATE TO EMITTER VOLTAGE (V) 20 IG(REF) = 1mA, RL = 54.5, TC = 25oC 15 VCE = 1200V VCE = 800V 60 TC = 25oC 40 10 VCE = 400V 5 20 TC = 150oC TC = -55oC 10 11 12 13 14 15 0 7 8 9 0 0 20 40 60 80 100 120 VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Typical Performance Curves 4 FREQUENCY = 1MHz Unless Otherwise Specified (Continued) ICE , COLLECTOR TO EMITTER CURRENT (A) 15 DUTY CYCLE < 0.5%, TC = 110oC 250s PULSE TEST C, CAPACITANCE (nF) 3 CIES 2 12 VGE = 15V 9 VGE = 10V 6 1 COES 0 CRES 0 5 10 15 20 25 3 0 0 1 2 3 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 t1 0.1 10-1 0.05 0.02 0.01 10-2 -5 10 SINGLE PULSE 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 PD t2 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG11N120CND 90% VGE L = 2mH VCE RG = 10 + ICE VDD = 960V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B |
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