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| Preliminary Product Description Stanford Microdevices' SGA-2386 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-2386 requires only DC blocking and bypass capacitors for external components. SGA-2386 DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block Small Signal Gain vs. Frequency 24 18 Product Features * DC-2800 MHz Operation * 2.7V Single Voltage Supply * High Output Intercept: +21dBm typ. at 850 MHz * High Gain: 17.2dB typ. at 850 MHz * Low Noise Figure: 2.9 dB typ. at 850 MHz Applications * Broadband Gain Blocks * Cordless Phones * IF/ RF Buffer Amplifier * Drivers for CATV Amplifiers Units Min. Typ. 8.8 8.0 15.5 17.2 15.3 14.0 21.0 1.67:1 1.40:1 21.0 21.2 2.9 3.6 112.0 2.4 2.7 3.0 Max. dB 12 6 1900 2400 3500 5000 100 500 900 0 Frequency MHz Symbol P 1dB Parameters: Test Conditions: Z0 = 50 Ohms, Id = 20 mA, T = 25C Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2800 MHz f = DC - 2800 MHz f = DC - 2800 MHz f = DC - 2800 MHz f = 850 MHz f = 1950 MHz f = DC - 1000 MHz f = 1000 - 2400 MHz f = 1000 MHz dB m dB m dB dB dB dB dB m dB m dB dB pS V S 21 S 12 S11 S 22 IP3 NF TD VD Small Signal Gain Reverse Isolation Input VSWR Output VSWR Third Order Intercept Point Noise Figure Group Delay Device Voltage The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A Preliminary Preliminary SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier Specification Parameter Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min Typ. 2.7 20.0 18.0 2.9 20.3 8.2 19.6 21.1 17.2 2.9 21.0 8.8 12.0 21.4 15.3 3.5 21.2 8.0 11.5 21.7 14.5 3.6 21.3 7.6 13.7 21.3 Max. Unit T= 25C V mA T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB T= 25C dB dB dB m dB m dB dB Test Condition The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A Preliminary Preliminary SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier Pin # 1 Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 Device Schematic 2 3 4 Application Schematic for +5V Operation at 900 MHz 1uF 68pF 115 ohms VCC=+5V 33nH 50 ohm microstrip 2 1 3 100pF 4 100pF 50 ohm microstrip Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 115 ohms VCC=+5V 22nH 50 ohm microstrip 2 1 3 50 ohm microstrip 68pF 4 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A Preliminary Preliminary SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier S21, Id =20mA, T=+25C 24 18 0 -1 0 S12, Id =20mA, T=+25C dB 12 6 1900 2400 3500 5000 100 500 900 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 5000 Frequency MHz Frequency MHz S11, Id =20mA, T=+25C 0 -1 0 0 -1 0 S22, Id =20mA, T=+25C dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 Frequency MHz Frequency MHz S11, Id=20mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 2.8 GHz S22, Id=20mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 2.8 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A Preliminary Preliminary SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier S21, Id =20mA, T=-40C 24 18 0 -1 0 S12, Id =20mA, T=-40C dB 1 2 6 1900 2400 3500 5000 100 500 900 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 Frequency MHz Frequency MHz S11, Id =20mA, T=-40C 0 -1 0 0 -1 0 S22, Id =20mA, T=-40C dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 Frequency MHz Frequency MHz S11, Id=20mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 2.8 GHz S22, Id=20mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 2.8 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A Preliminary Preliminary SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier S21, Id =20mA, T=85C 24 18 S12, Id =20mA, T=85C 0 -1 0 dB 1 2 6 1900 2400 3500 5000 100 500 900 0 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 Freq. Min = 0.1 GHz Freq. Max = 2.8 GHz Frequency MHz Frequency MHz S11, Id =20mA, T=85C 0 -1 0 0 -1 0 S22, Id =20mA, T=85C dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 dB -2 0 -3 0 -4 0 100 500 900 1900 2400 3500 5000 Frequency MHz Frequency MHz S11, Id=20mA, Ta= 85C Freq. Min = 0.1 GHz Freq. Max = 2.8 GHz S22, Id=20mA, Ta= 85C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A Preliminary Preliminary SGA-2386 DC-2800 MHz 2.7V SiGe Amplifier Absolute Maximum Ratings Parameter Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature Value 40 -40 to +85 +7 -40 to +85 +150 U nit mA C dB m C C Part Number Ordering Information Part Number SGA-2386-TR1 SGA-2386-TR2 Reel Siz e 7" 13" Devices/Reel 1000 3000 Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 3V 15 5V 115 7.5V 240 9V 315 12V 465 Thermal Resistance (Lead-Junction): 97 C/W Package Dimensions Pin Designation 1 2 3 4 RF in GND RF out and Bias GND PCB Pad Layout The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Doc # EDS-100627 Rev. A |
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