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| SPD 09N05 SIPMOS(R) Power Transistor Features * N channel * Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V A Enhancement mode * Avalanche rated * dv/dt rated * 175C operating temperature Type SPD09N05 SPU09N05 Package P-TO252 P-TO251 Ordering Code Q67040-S4136 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4130-A2 Tube MaximumRatings , at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value 9.2 6.5 37 35 2.4 6 20 24 -55... +175 55/175/56 Unit A ID TC = 25 C TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse mJ ID = 9.2 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s V W C IS = 9.2 A, VDS = 40 V, di/dt = 200 A/s Gate source voltage Power dissipation VGS Ptot Tj , Tstg TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 09N05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 6.25 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.093 0.1 V Unit V(BR)DSS VGS(th) IDSS 55 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 10 A Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 6.5 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 06.99 SPD 09N05 Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Dynamic Characteristics Transconductance typ. 4.5 215 75 45 15 max. 270 95 60 25 Unit g fs Ciss Coss Crss td(on) 3 - S pF VDS2*ID*RDS(on)max , ID = 6.5 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50 Rise time tr - 20 30 VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50 Turn-off delay time td(off) - 30 45 VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50 Fall time tf - 25 40 VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50 Data Sheet 3 06.99 SPD 09N05 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 1.3 3.5 7 5.9 max. 2 5.25 11 V nC Unit Qgs Qgd Qg V(plateau) - VDD = 40 V, ID = 9.2 A Gate to drain charge VDD = 40 V, ID = 9.2 A Gate charge total VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 9.2 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.05 50 0.085 9.2 37 1.8 75 0.13 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 18.5 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 06.99 SPD 09N05 Power Dissipation Drain current Ptot = f (TC) SPD09N05 ID = f (TC ) parameter: VGS 10 V SPD09N05 26 W 11 A 22 9 20 18 8 7 6 5 4 3 6 4 2 0 0 20 40 60 80 100 120 140 160 C 190 2 1 0 0 20 40 60 80 100 120 140 160 C 190 Ptot 14 12 10 8 TC ID 16 TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 2 SPD09N05 ZthJC = f (tp ) parameter : D = tp /T 10 1 tp = 2.5s SPD09N05 K/W A 10 0 D DS (o n) R 100 s Z thJC 10 -1 D = 0.50 0.20 ID 10 0 = V DS 10 1 /I 10 s 1 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 10 ms DC 10 -1 -1 10 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 06.99 SPD 09N05 Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPD09N05 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD09N05 24 A Ptot = 24W 0.32 c VGS [V] a b d e f g h i 20 18 4.0 4.5 l kj i 16 d 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 ID 14 12 10 8 6 e g he f g h RDS(on) c 5.0 0.24 0.20 0.16 j k l fi j k l 0.12 d 0.08 0.04 VGS [V] = c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 4 c 2 0 0.0 a b 1.0 2.0 3.0 4.0 V 5.5 VDS 0.00 0 2 4 6 8 10 12 14 16 A 19 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max 30 Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 6 A S 20 4 15 gfs 3 10 2 5 1 0 0 V ID 1 2 3 4 5 6 7 8 10 0 0 2 4 6 8 10 12 14 16 A 20 VGS ID Data Sheet 6 06.99 SPD 09N05 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 6.5 A, VGS = 10 V SPD09N05 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 10 A 5.0 V 4.4 0.34 0.28 4.0 VGS(th) RDS(on) 3.6 3.2 2.8 2.4 max 0.24 0.20 0.16 98% typ 0.12 0.08 2.0 1.6 1.2 0.8 typ 0.04 0.4 0.0 -60 -20 20 60 100 140 C min 0.00 -60 -20 20 60 100 140 V 200 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 2 SPD09N05 A pF Ciss C 10 1 10 2 Coss IF 10 0 Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 06.99 SPD 09N05 Avalanche Energy EAS = f (Tj) parameter: ID = 9.2 A, VDD = 25 V RGS = 25 40 mJ Typ. gate charge VGS = f (QGate ) parameter: ID puls = 9.2 A SPD09N05 16 V 12 30 25 VGS EAS 10 0,2 VDS max 8 0,8 VDS max 20 15 6 10 4 5 2 0 20 40 60 80 100 120 140 C 180 0 0 2 4 6 8 Tj 11 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD09N05 66 V 64 V(BR)DSS 62 60 58 56 54 52 50 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 06.99 |
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