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| NTHD5902T1 Power MOSFET Dual N-Channel ChipFETE 2.9 Amps, 30 Volts Features * Low RDS(on) for Higher Efficiency * Miniature ChipFET Surface Mount Package Saves Board Space Applications http://onsemi.com * Power Management in Portable and Battery-Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards DUAL N-CHANNEL 2.9 AMPS, 30 VOLTS RDS(on) = 85 mW D1 D2 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C) (Note 1) TA = 25C TA = 85C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25C TA = 85C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "3.9 "2.8 IDM IS PD 2.1 1.1 TJ, Tstg 1.1 0.6 C 1.8 "10 0.9 "2.9 "2.1 A A W 5 secs 30 "20 Steady State Unit V V A G1 G2 S2 N-Channel MOSFET S1 N-Channel MOSFET -55 to +150 ChipFET CASE 1206A STYLE 2 1. Surface Mounted on 1 x 1 FR4 Board. PIN CONNECTIONS D1 D1 D2 D2 8 7 6 5 1 2 3 4 MARKING DIAGRAM 1 2 3 4 A6 8 7 6 5 S1 G1 S2 G2 A6 = Specific Device Code ORDERING INFORMATION Device NTHD5902T1 Package ChipFET Shipping 3000/Tape & Reel (c) Semiconductor Components Industries, LLC, 2005 February, 2005 - Rev. XXX 1 Publication Order Number: NTHD5902T1/D NTHD5902T1 THERMAL CHARACTERISTICS Characteristic Maximum Junction-to-Ambient (Note 2) t v 5 sec Steady State Maximum Junction-to-Foot Steady State Symbol RthJA Typ 50 90 30 Max 60 110 40 Unit C/W RthJF C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85C On-State Drain Current (Note 3) Drain-Source On-State Resistance (Note 3) ID(on) rDS(on) () gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 0 A VGEN = 10 V 1.0 A, V, RG = 6 W VDS w 5.0 V, VGS = 10 V VGS = 10 V, ID = 2.9 A VGS = 4.5 V, ID = 2.2 A Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time - VDS = 15 V VGS = 10 V V, V, ID = 2.9 A - - - - - - - 5.0 0.8 1.0 7.0 12 12 7.0 40 7.5 - - 11 18 18 11 80 ns nC VDS = 15 V, ID = 2.9 A IS = 0.9 A, VGS = 0 V 1.0 - - - 10 - - - - - - - - - 0.072 0.120 20 0.8 - "100 1.0 5.0 - 0.085 0.143 - 1.2 S V A W V nA mA Symbol Test Condition Min Typ Max Unit 2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 NTHD5902T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 8 ID,Drain Current (A) ID,Drain Current (A) VGS = 10 thru 5 V 10 8 6 4 2 0 4V 6 4 125C 2 0 25C TC = -55C 4 5 3V 0 0.5 1.0 1.5 2.0 2.5 VDS, Drain-to-Source Voltage (V) 3.0 0 1 2 3 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 0.20 r DS(on),On-Resistance ( ) 400 300 VGS = 4.5 V C, Capacitance (pF) Ciss 0.15 0.10 VGS = 10 V 0.05 200 Coss 100 Crss 0 4 8 12 16 VDS, Drain-to-Source Voltage (V) 20 0 0 2 4 6 ID, Drain Current (A) 8 10 0 Figure 3. On-Resistance vs. Drain Current Figure 4. Capacitance 10 VGS,Gate-to-Source Voltage (V) r DS(on),On-Resistance ( ) (Normalized) VDS = 15 V ID = 2.9 A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 VGS = 10 V ID = 2.9 A 8 6 4 2 0 0 1 2 3 Qg, Total Gate Charge (nC) 4 5 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 150 Figure 5. Gate Charge Figure 6. On-Resistance vs. Junction Temperature http://onsemi.com 3 NTHD5902T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 rDS(on), On-Resistance ( ) 0.20 I S, Source Current (A) 0.15 ID = 2.9 A 0.10 TJ = 150C TJ = 25C 0.05 1 0 0.2 0.4 0.6 0.8 1.0 VDS, Drain-to-Source Voltage (V) 1.2 0 0 2 4 6 8 VGS, Gate-to-Source Voltage (V) 10 Figure 7. Source-Drain Diode Forward Voltage Figure 8. On-Resistance vs. Gate-to-Source Voltage 50 40 Power (W) 30 20 10 0 10-4 0.4 0.2 V GS (th), Varience (V) -0.0 -0.2 -0.4 -0.6 -0.8 -50 ID = 250 mA -25 0 25 50 75 TJ, Temperature (C) 100 125 150 10-3 10-2 10 -1 1 Time (sec) 10 100 600 Figure 9. Threshold Voltage Figure 10. Single Pulse Power http://onsemi.com 4 NTHD5902T1 TYPICAL ELECTRICAL CHARACTERISTICS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Notes: 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10 -1 1 Square Wave Pulse Duration (sec) PDM t1 t2 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 0.01 10-4 Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10 -1 Square Wave Pulse Duration (sec) 1 10 Figure 12. Normalized Thermal Transient Impedance, Junction-to-Foot http://onsemi.com 5 NTHD5902T1 Notes http://onsemi.com 6 NTHD5902T1 PACKAGE DIMENSIONS ChipFET CASE 1206A-03 ISSUE D A 8 7 6 5 M K 5 6 3 7 2 8 1 S 1 2 3 4 B 4 L G D J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080 C 0.05 (0.002) STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 http://onsemi.com 7 NTHD5902T1 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTHD5902T1/D |
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