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| MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS(on) = 0.90 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 M Continuous Transient T C = 25C T C = 25C, pulse width limited by TJM T C = 25C Maximum Ratings 900 900 20 30 12 48 300 -55 ... +150 150 -55 ... +150 V V V V A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Symbol Test Conditions IGSS I DSS R DS(on) VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 25C TJ = 125C 100 250 1 0.90 nA A mA l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l VGS(th) 2 4.5 V l VDS = VGS, ID = 250 A l VDSS VGS = 0 V, ID = 3 mA 900 V l Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l l l l 91593E(5/96) 1-4 IXTH 12N90 IXTM 12N90 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 12 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 65 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 63 32 145 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 55 50 50 100 50 170 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD (IXTH) Outline gfs Ciss Coss Crss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 900 A A Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AA (IXTM) Outline V ns IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 3.42 .97 1.09 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 L 7.93 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 12N90 IXTM 12N90 Fig. 1 Output Characteristics 18 16 14 TJ = 25C VGS = 10V 8V Fig. 2 Input Admittance 18 16 14 ID - Amperes 10 8 6 4 2 0 7V ID - Amperes 12 12 10 8 6 4 2 0 TJ = 25C 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.4 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 RDS(on) - Normalized RDS(on) - Normalized 1.3 1.2 VGS = 10V 2.00 1.75 1.50 1.25 1.00 0.75 ID = 6.5A 1.1 1.0 0.9 VGS = 15V 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 18 16 14 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVCES BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 12 10 8 6 4 2 0 -50 12N90 1.0 0.9 0.8 0.7 0.6 10N90 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 12N90 IXTM 12N90 Fig.7 Gate Charge Characteristic Curve 10 8 VDS = 450V ID = 13A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10s 6 4 2 0 0 25 50 75 100 125 150 ID - Amperes 10 Limited by RDS(on) 100s 1ms VGE - Volts 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 Ciss Fig.10 Source Current vs. Source to Drain Voltage 18 16 14 Capacitance - pF 3500 f = 1 MHz VDS = 25V 2500 2000 1500 1000 500 0 0 5 Coss Crss ID - Amperes 3000 12 10 8 6 4 2 TJ = 125C TJ = 25C 10 15 20 25 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE - Volts VSD - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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