 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistors 2SD2620J Silicon NPN epitaxial planer type Unit: mm 1.60+0.05 -0.03 1.000.05 0.800.05 For low-frequency amplification I Features * High forward current transfer ratio hFE * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VBEO * SS-mini type package 0.12+0.03 -0.01 3 1.600.05 0.85+0.05 -0.03 (0.375) 1 0.270.02 2 (0.80) (0.50)(0.50) 0 to 0.02 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 100 100 15 50 20 125 125 -55 to +125 Unit V V V mA mA mW C C 5 0.70+0.05 -0.03 5 1: Base 2: Emitter 3: Collector EIAJ: SC-81 SS-Mini Type Package Marking Symbol: 3B I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage VCBO VCEO VEBO hFE VCE(sat) fT NV Conditions VCB = 60 V, IE = 0 VCE = 60 V, IB = 0 IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GB = 80 dB Rg = 100 k, Function = FLAT 100 100 15 400 0.05 200 80 1 200 0.2 V MHz mV Min Typ Max 0.1 1.0 Unit A A V V V 0.10 max. 1 |
Price & Availability of 2SD2620
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |