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| Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.00.2 Unit: mm 4.00.2 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 40 20 7 8 5 1 150 -55 ~ +150 Unit V V V A A W C C 123 2.540.15 2.30.2 0.45 -0.1 1.27 1.27 +0.15 13.50.5 0.70.1 0.70.2 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 8.00.2 s Features 0.45 -0.1 +0.15 1:Emitter 2:Collector 3:Base TO-92NL Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 0.1 Unit A A V V 20 7 230 150 1 150 50 *2 600 V MHz pF Pulse measurement *1h FE1 Rank classification Q 230 ~ 380 R 340 ~ 600 Rank hFE1 1 Transistor PC -- Ta 1.2 2.4 Ta=25C IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 2SD1934 IC -- VCE 6 VCE=2V 5 25C IC -- VBE Collector power dissipation PC (W) 1.0 2.0 Collector current IC (A) 0.8 Collector current IC (A) Ta=75C 4 -25C 0.6 3 0.4 2 0.2 1mA 1 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C IC/IB=30 600 hFE -- IC 400 VCE=2V fT -- I E VCB=6V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 1 3 10 350 300 250 200 150 100 50 400 Ta=75C 300 25C -25C 200 100 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob -- VCB 100 Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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