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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1705
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
* Super low on-state resistance
1.44
RDS(on)1 = 19.0 m TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 m TYP. (VGS = 4.5 V, ID = 4.0 A) * Low Ciss : Ciss = 750 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1.8 Max.
1 5.37 Max.
4
6.0 0.3 4.4
+0.10 -0.05
0.8
0.15
0.05 Min.
0.5 0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1705G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected.)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 25 8 50 2.0 150 -55 to + 150
V V A A W C
Gate Body Diode Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature
C
Gate Protection Diode
Notes 1. PW 10 s, Duty cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm Remark
2
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G12712EJ1V0DS00 (1st edition) Date Published February 1999 NS CP(K) Printed in Japan
(c)
1998, 1999
PA1705
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = 30 V, VGS = 0 V VGS = 25 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.0 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 8.0 A VDD = 24 V VGS = 10 V IF = 8.0 A, VGS = 0 V If = 8.0 A, VGS = 0 V di/dt = 100A/s 750 350 160 19 107 50 32 19 2.4 6.3 0.8 33 22 1.5 4.0 MIN. TYP. 19 30 2.0 8.4 10 10 MAX. 27 40 2.5 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA PG.
90 % 90 % ID
PG.
RG RG = 10
0 ID
10 %
VGS (on)
90 %
RL VDD
VDD
50
VGS 0 t
t = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
2
Data Sheet G12712EJ1V0DS00
PA1705
TYPICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 Mounted on ceramic substrate of 1200 mm2 x 1.7 mm TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse) = 50 A
Lim ite d V)
TA - Ambient Temperature - C
Remark Mounted on ceramic substrate of 2000 mm2 x 1.7 mm
1 m s
ID - Drain Current - A
10
) 10 on S( S = RD t VG (a ID(DC) =
8A
10 10 0 m s
m
s
Po
we
1
r D DC iss ipa
tio
n
Lim
ite
d
0.1 0.1
TA = 25 C Single Pulse
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W
100
10
1
0.1 Mounted on ceramic substrate of 1200 mm 2 to 1.7 mm Single Pulse Channel to Ambient 1m 10 m 100 m 1 10 100 1000 10 000
0.01 0.001 100
PW - Pulse Width - s
Data Sheet G12712EJ1V0DS00
3
PA1705
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
VGS = 10 V VGS = 4.5 V 10
1
TA = 125 C 75 C 25 C -25 C
0.1 0.01 0 VDS = 10 V 2 4 6 8 0 0.2 0.4 0.6 0.8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
100
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 150 ID = 4 A 100
10 TA = 125 C 75 C 25 C -25 C
1
50
0.1
1
10
100
0
5
10
15
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 70 60 50 40 30 20 VGS=10 V 10 0 1 10 ID - Drain Current - A 100 VGS = 4.5 V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V
2.0
VGS = 0 V IF = 8 A
1.0
0 -20 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - C
4
Data Sheet G12712EJ1V0DS00
PA1705
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
50
100
40
VGS = 4.5 V
10 VGS = 0 V 1
30
20
VGS = 10 V
0.1 0 0.5 1.0 1.5
10 ID = 4 A -20 0 20 40 60 80 100 120 140 160 VSD - Source to Drain Voltage - V
0
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 0
Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1 000 tr 100 td(off) tf td(on) 10
VDS = 10 V VGS = 0 V f = 1 MHz
1 000 Ciss Coss 100 Crss
10 0.1
1
10
100
1 0.1
1
VDD = 15 V VGS(on) = 10 V RG = 10 10 100
VGS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Time - ns
di/dt = 100 A/ s VGS = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40
VDS - Drain to Source Voltage - V
ID = 8 A 14 30 VDD = 24 V 15 V 6V VGS 12 10 8 6 10 VDS 0 5 10 15 20 4 2 0
VGS - Gate to Source Voltage - V
100
20
10
1 0.1
1
10
100
IF - Diode Current - A
QG - Gate Charge - nC
Data Sheet G12712EJ1V0DS00
5
PA1705
[MEMO]
6
Data Sheet G12712EJ1V0DS00
PA1705
[MEMO]
Data Sheet G12712EJ1V0DS00
7
PA1705
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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