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| Transistors with built-in Resistor UNR111x Series (UN111x Series) Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (0.4) 6.90.1 (1.5) (1.5) 3.50.1 2.50.1 (1.0) (1.0) 2.00.2 2.40.2 1.00.1 * * * * * * * * * * * * * * * UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H UNR111L (UN1110) (UN1111) (UN1112) (UN1113) (UN1114) (UN1115) (UN1116) (UN1117) (UN1118) (UN1119) (UN111D) (UN111E) (UN111F) (UN111H) (UN111L) (R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k 0.51 k 1 k 47 k 47 k 4.7 k 2.2 k 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 10 k 4.7 k 3 (2.5) 2 (2.5) 1 1.250.05 Resistance by Part Number (0.85) 0.550.1 0.450.05 1: Base 2: Collector 3: Emitter M-A1 Package Internal Connection R1 B R2 E C Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 400 150 -55 to +150 Unit V V mA mW C C Note) The part numbers in the parenthesis show conventional part number. Publication date: October 2003 SJH00001BED 4.10.2 * Costs can be reduced through downsizing of the equipment and reduction of the number of parts * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R 0.9 R 0.7 4.50.1 Features 1 UNR111x Series Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR1111 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min -50 -50 - 0.1 - 0.5 - 0.5 - 0.2 - 0.1 - 0.01 -1.0 -1.5 -2.0 hFE VCE = -10 V, IC = -5 mA 35 60 80 160 20 30 VCE(sat) VOH VOL IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCC = -5 V, VB = -10 V, RL = 1 k VCC = -5 V, VB = -6 V, RL = 1 k fT R1 VCB = -10 V, IE = 2 mA, f = 200 MHz -30% 80 10 22 47 4.7 0.51 1 2.2 R1/R2 0.8 0.17 0.08 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.27 1.2 0.25 0.12 +30% MHz k -4.9 - 0.2 - 0.25 V V V 460 Typ Max Unit V V A A mA cutoff current UNR1112/1114/111D/111E (Collector open) UNR1113 UNR1110/1115/1116/1117 UNR111F/111H UNR1119 UNR1118/111L Forward current UNR1111 transfer ratio UNR1112/111E UNR1113/1114 UNR1110 */1115 */1116 */ 1117 * UNR1118/111L UNR1119/111D/111F/111H Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR1113 UNR111D UNR111E Transition frequency Input resistance UNR1111/1114/1115 UNR1112/1117 UNR1110/1113/111D/111E UNR1116/111F/111L UNR1118 UNR1119 UNR111H Resistance ratio UNR1111/1112/1113/111L UNR1114 UNR1118/1119 UNR111D UNR111E UNR111F UNR111H Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification (UNR1110/1115/1116/1117) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 SJH00001BED 2 UNR111x Series Common characteristics chart PT Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR1110 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA -100 - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -60 - 0.2 mA - 0.1 mA -20 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -120 -10 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta = 75C -1 Ta = 75C 25C - 0.1 -25C 200 25C -25C -40 100 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00001BED 3 UNR111x Series Characteristics charts of UNR1111 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C -100 VCE(sat) IC IC / IB = 10 hFE IC 160 VCE = -10 V Ta = 75C - 0.9 mA Forward current transfer ratio hFE Collector current IC (mA) -120 - 0.8 mA - 0.7 mA - 0.6 mA -10 25C 120 -25C 80 -80 - 0.5 mA - 0.4 mA - 0.3 mA -1 Ta = 75C 25C - 0.1 -25C -40 - 0.2 mA - 0.1 mA 40 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1112 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -160 Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 -1 25C - 0.1 -25C Ta = 75C Ta = 75C 200 25C -25C 100 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 SJH00001BED UNR111x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1113 IC VCE IB = -1.0 mA Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 400 hFE IC VCE = -10 V -160 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE Collector current IC (mA) -120 -10 300 Ta = 75C 25C 200 -25C -1 Ta = 75C 25C - 0.1 -25C 100 0 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00001BED 5 UNR111x Series Characteristics charts of UNR1114 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 VCE(sat) IC -100 IC / IB = 10 400 hFE IC VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C 200 25C -25C 100 -1 Ta = 75C - 0.1 25C -25C -1 -10 -100 0 -1 -10 -100 -1 000 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -1 000 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -100 -10 2 -10 -1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1115 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA - 0.2 mA -40 - 0.1 mA -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C -1 Ta = 75C - 0.1 25C 200 25C -25C 100 -25C -1 -10 -100 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 6 SJH00001BED UNR111x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -10 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1116 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 VCE(sat) IC -100 IC / IB = 10 400 hFE IC VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C -1 Ta = 75C - 0.1 25C 200 25C -25C 100 -25C -1 -10 -100 0 -1 -10 -100 -1 000 - 0.01 - 0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00001BED 7 UNR111x Series Characteristics charts of UNR1117 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -120 -10 Forward current transfer ratio hFE -100 Collector current IC (mA) 300 -80 -60 - 0.3 mA - 0.2 mA - 0.1 mA -1 25C - 0.1 -25C Ta = 75C 200 Ta = 75C -40 25C 100 -25C -20 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 -0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1118 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 hFE IC VCE = -10 V -240 Collector current IC (mA) -160 IB = - 1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -10 Forward current transfer ratio hFE -200 120 -120 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta = 75C 80 25C -25C 40 Ta = 75C 25C -80 - 0.1 -25C -1 -10 -100 -40 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 SJH00001BED UNR111x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1119 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 160 VCE = -10 V -240 Collector current IC (mA) -160 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -10 Forward current transfer ratio hFE -200 120 Ta = 75C 80 -120 -1 Ta = 75C 25C -25C -80 -40 0 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 25C - 0.1 -25C -1 -10 -100 40 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = -0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00001BED 9 UNR111x Series Characteristics charts of UNR111D IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 hFE IC VCE = -10 V -60 Forward current transfer ratio hFE -50 IB = - 1.0 mA - 0.9 mA - 0.8 mA Collector current IC (mA) -10 120 Ta = 75C -40 - 0.3 mA - 0.2 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.1 mA 25C 80 -25C -30 -1 Ta = 75C - 0.1 25C -20 40 -10 -25C -1 -10 -100 0 -1 -10 -100 -1 000 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR111E IC VCE IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -60 Collector current IC (mA) -10 Forward current transfer ratio hFE -50 300 -40 - 0.3 mA -30 - 0.6 mA - 0.5 mA - 0.4 mA - 0.2 mA -1 25C - 0.1 -25C Ta = 75C 200 Ta = 75C 100 25C -25C -20 - 0.1 mA -10 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 SJH00001BED UNR111x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 -1.5 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR111F IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 hFE IC VCE = -10 V -240 -10 Forward current transfer ratio hFE -200 Collector current IC (mA) 120 Ta = 75C 25C 80 -25C -160 -120 - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 -12 -1 Ta = 75C 25C - 0.1 -25C -1 -10 -100 -80 40 -40 0 0 -2 -4 -6 -8 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00001BED 11 UNR111x Series Characteristics charts of UNR111H IC VCE Collector-emitter saturation voltage VCE(sat) (V) -120 Ta = 25C VCE(sat) IC -100 IC / IB = 10 240 hFE IC VCE = -10 V Collector current IC (mA) -10 -80 IB = - 0.5 mA - 0.4 mA - 0.3 mA Forward current transfer ratio hFE -100 200 160 Ta = 75C 120 25C 80 -60 -1 Ta = 75C 25C -0.1 -25C -40 - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -25C 40 -0.01 -1 -10 -100 -1 000 0 -0.1 -1 -10 -100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 4 Input voltage VIN (V) -10 -100 -10 3 -1 2 - 0.1 1 0 -1 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR111L IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 240 VCE = -10 V -240 Collector current IC (mA) -10 -160 IB = -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA 0 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE -200 200 160 -120 -1 Ta = 75C 25C -25C 120 Ta = 75C 25C -25C -80 80 - 0.1 -40 40 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 SJH00001BED UNR111x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 4 Input voltage VIN (V) -10 3 -1 2 - 0.1 1 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) SJH00001BED 13 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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