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TST0911
Dualband SiGe-Power Amplifier for GSM 900/1800/1900
Description
The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors' advanced Silicon-Germanium (SiGe) process and has been designed for use in GSM-based cellular phones. The IC offers the functionality of two amplifiers in one package and is suited for GSM 900/1800/1900 (GSM/ DCS/ PCS) dual- or triple mobile phones. With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0911 needs few external components.
Features
D 900-MHz amplifier and 1800/1900-MHz amplifier
for dual-/tripleband application
D Current consumption in power-down mode 10 A,
no external power-supply switch required
D 35 dBm output power @ 900 MHz
32 dBm output power @ 1800/ 1900 MHz
D Power-added efficiency (PAE) 50% D Single supply operation at 3 V
no negative supply voltage necessary
D D D D
Power-ramp control Mode switch AC-coupled input, simple input and output matching SMD package (PSSOP28 with heat slug)
Block Diagram
VCC
1
VCC2 12 3
GND 4 22 28 23 24 RFout1/VCC3 (900 MHz)
5
RFin1 (900 MHz) VCTL VSW VCC,CTL GND RFin2 (1800/1900 MHz)
6
Match
Match
Match
25 26
14 15 8 7 Control
27 16 17 18 19
Harmonic tuning GSM Harmonic tuning DCS
RFout2/VCC3
9
Match
Match
Match
20 (1800/1900 MHz) 21 10 GND
14676
11 VCC4
12
13 VCC5
Figure 1. Block diagram
Ordering Information
Extended Type Number TST0911-M TST0911-M Package PSSOP28 PSSOP28 Remarks Tube Taped and reeled
Rev. A1, 20-May-99
1 (8)
Preliminary Information
TST0911
Pin Description
VCC2 VCC2 VCC2 GND VCC1 RFin1 GND VCC,CTL RFin2 28 GND 27 RFout1/VCC6 26 RFout1/VCC6 25 RFout1/VCC6 24 RF /V out1 CC6 23 RFout1/VCC6 22 GND 21 RFout2/VCC6 20 RFout2/VCC6 19 RFout2/VCC6 18 RFout2/VCC6 17 RFout2/VCC6 16 RFout2/VCC6 15
14964
1 2 3 4 5 6 7 8 9
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Symbol VCC2 VCC2 VCC2 GND VCC1 RFin1 GND VCC,CTL RFin2 GND VCC4
Function Supply voltage 2 pp y g (900-MHz amplifier) Ground Supply voltage 1 (900-MHz amplifier) RF input 1 (900 MHz) Ground (control) Supply voltage for control RF input 2 (1800/1900 MHz) Ground Supply voltage 4 (1800/1900-MHz amplifier) Supply voltage 5 pp y g (1800/1900-MHz amplifier)
GND 10 VCC4 11 VCC5 12 VCC5 13 VCTL 14
VCC5 VCC5 VCTL Control input VSW Mode switch RFout2/VCC6 RF output 2 / harmonic tuning (1800/1900 MHz) RFout2/VCC6 RF output 2 / supply voltage 6 p pp y g RFout2/VCC6 (1800/1900 MHz) RFout2/VCC6 RFout2/VCC6 RFout2/VCC6 GND RFout1/VCC3 RFout1/VCC3 RFout1/VCC3 RFout1/VCC3 RFout1/VCC3 GND
Ground RF output 1 / supply voltage 3 p pp y g (900 MHz)
VSW
Figure 2. Pinning
RF output 1 / harmonic tuning (900 MHz) Ground
2 (8)
Rev. A1, 20-May-99
Preliminary Information
TST0911
Absolute Maximum Ratings
All voltages are referred to GND Supply voltage VCC Parameter Pins 1, 2, 3, 5, 11, 12, 13, 16, 17, 18, 19 ,20, 21, 23, 24, 25, 26 and 27 Pin 8 Pin 6 (GSM) Pin 9 (DCS/PCS) Pin 14 Symbol VCC1, VCC2 VCC3, VCC4 VCC5, VCC6 VCC, CTL Pin VCTL Min. Typ. Max. 5.0 Unit V
Input power Gain-control voltage
13 8 0 2.2 25 1.2 VCC + 150 +150
dBm dBm V % ms V C C
Duty cycle for operation Burst duration External voltage for mode switch Pin 16 Junction temperature Storage temperature
tburst VSW Tj Tstg
0
- 40
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value t.b.d. Unit K/W
Operating Range
All voltages are referred to GND Parameter Supply voltage Ambient temperature Input frequency Symbol VCC Tamb fin (Pin 6) fin (Pin 9) Min. 2.4 - 25 Typ. 3.5 900 1800/1900 Max. 4.5 + 85 Unit V C MHz MHz
Rev. A1, 20-May-99
3 (8)
Preliminary Information
TST0911
Electrical Characteristics
Test conditions: VCC = VCC1 to VCC6, VCC, CTL = + 3.5 V, VCTL = 1.5 V, Tamb = + 25C, tburst = 0.577 ms, tperiod = 4.615 ms (see application circuit) Parameters Power supply Supply voltage Current consumption Test Conditions / Pins Symbol VCC Active mode Pout = 34.5 dBm, PAE = 50% Pout = 32.5 dBm, PAE = 42% Power-down mode VCTL 0.2 V I I Min. 2.7 Typ. 3.5 1.7 1.13 10 Max. 4.5 Unit V A A A
Current consumption (leakage current) 900-MHz amplifier (GSM) Frequency range Input impedance *) Output impedance Output power Pin = 3 dBm, RL = RG = 50 VCC = 3.5 V, Tamb = +25C VCC = 2.7 V, Tamb = +85C Minimum output power VCTL = 0.3 V Input power Power-added efficiency VCC = 3 V, Pout = 28 dBm VCC = 3 V, Pout = 30 dBm VCC = 3 V, Pout = 33.5 dBm Input VSWR *) Pin = 0 to 10 dBm, Pout = 34.5 dBm Stability Tamb = -25 to + 85 C no spurious -60 dBc Load mismatch Pout = 34.5 dBm, all phases (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power Pout = 34 dBm, RBW = 100 kHz f = 925 to 935 MHz f 935 MHz Isolation between input Pin = 0 to 10 dBm, and output VCTL 0.2 V (power down) Isolation between GSM in- DCS/PCS powered down, put and DCS/PCS output Pin = 10 dBm Control curve see figure 3 (t.b.d.) Rise and fall time Output power versus input see figure 1 (t.b.d.) power Power control range Control voltage range Control current, assuming Pin = 0 to 10 dBm, that only GSM amplifier at VCTL = 0 to 2.0 V a time is turned on *) with external matching (see application circuit)
fin Zi Zo Pout Pout Pin PAE
880
900 50 50 34.8 33.0 - 20 0
915
MHz
W W
34.3 32.0
10
dBm dBm dBm dBm %
25 35 50 2:1 10 : 1 10 : 1 -35 -35 - 70 - 82 50 50
VSWR VSWR VSWR 2fo 3fo
dBc dBc dBm dBm dB dB
tr, tf
0.5
s
VCTL ICTL
60 0.5
2.5 200
dB V A
4 (8)
Rev. A1, 20-May-99
Preliminary Information
TST0911
Electrical Characteristics (continued)
Parameters Power control Control curve slope Power-control range Control-voltage range Control current Test Conditions / Pins Pout 25 dBm VCTRL = 0.3 to 2.0 V VCTL ICTL fin Zi Zo Pout 31.7 30.0 1710 1850 50 50 32.0 30.5 - 20 0 Symbol Min. Typ. Max. 150 50 0.3 2.0 200 1785 1910 Unit dB/ V dB V A MHz MHz
Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V 1800/1900-MHz amplifier (DCS/PCS) Frequency range DCS PCS Input impedance *) Output impedance Output power Pin = 3 dBm, RL = RG = 50 VCC = + 3.5 V, Tamb = +25C VCC = + 2.7 V, Tamb = +85C Minimum output power VCTL = 0.3 V Input power Power-added efficiency VCC = + 3 V, Pout = 26 dBm at Pout, max VCC = + 3 V, Pout = 28 dBm VCC = + 3 V, Pout = 31.5 dBm Input VSWR *) Pin = 0 to 6 dBm, Pout = 31.5 dBm Stability Tamb = -25 to + 85C Load mismatch Pout = 31.5 dBm stable, no damage all phases Second harmonic distortion Third harmonic distortion Noise power Pout = 31.5 dBm, RBW = 100 kHz f = 1805-1880 MHz (DCS) f = 1930-1990 MHz (PCS) Isolation between input Pin = 0 to 6 dBm, and output VCTL 0.2 V (power down) Isolation between DCS/ GSM powered down, PCS input and GSM output Pin = 6 dBm Control curve slope Rise and fall time Power control range Control voltage range Control current, assuming that only DCS/PCS amplifier at a time is turned on Mode switch Switching voltage Switching current *) Pin = 0 to 6 dBm, VCTL = 0 to 2.2 V
W W
Pin PAE
6
dBm dBm dBm dBm %
25 35 42 2:1 10 : 1 10 : 1 -35 -35 - 71 - 71 48 50 150 0.5 50 0.5 2.5 200
VSWR VSWR VSWR IM2 IM3
dBc dBc dBm dBm dB dB dB/ V s dB V A
tr, tf VCTL ICTL
900-MHz amplifier active 1800/1900-MHz amplifier active VSW = VCC
Vsw Isw
VCC-0.3
0
VCC 0.3 200
V V A
with external matching (see application circuit)
Rev. A1, 20-May-99
5 (8)
Preliminary Information
TST0911
Application Circuit
V CC C1 220nF C2 220nF C3 39pF T3 C4 56pF C5 RF IN1 L1 3.9nH 12pF C6 1nF C7 RF IN2 L2 1.8nH T7 C8 100nF T9 C10 100nF C9 12pF C11 8.2pF AVX V 2.2pF 10 T8 11 T10 12 13 CTL C12 22pF 14 18 17 16 15 DCS harmonic tuning T15 V SW 19 T6 7 Control 8 9 21 T11 20 C18 3.9pF AVX T16 C19 6.8pF AVX RF OUT 2 22 4 T4 5 T5 6 23 24 C16 12 pF h.Q. 56pF 25 T12 C17 RF OUT1 T1 T2 2 3 27 26 GSM harmonic tuning T13 1/4 wavelength line
C13 220nF
1
28 T14
C14 C15 100pF 100pF
1/4 wavelength line
C20
C21
10pF 10pF C23 100nF C22 100nF 16503
Figure 3. Application circuit
All components Tx are microstrip lines: FR4, epsilon(r) = 4.3, metal: Cu 3.5 mm; Distance: 1. layer to RF ground = 0.5 mm Name T1 T2 T3 T4 T5 T6 T7 T8 l/ mm 21.8 2.0 37.9 10.8 2.6 1.6 31.8 4.5 w/ mm 0.5 1.4 0.5 0.5 1.0 1.0 0.2 0.2 Name T9 T10 T11 T12 T13 T14 T15 T16 l/ mm 47.8 1.7 5.8 8.6 29.2 19.6 11.2 29.3 w/ mm 1.0 0.5 1.8 1.6 0.5 0.2 0.2 0.2
+ 0.8 0.5 + 1.6 0.5
6 (8)
Rev. A1, 20-May-99
Preliminary Information
TST0911
Package Information
Package PSSOP28
Dimensions in mm
9.98 9.80 1.60 1.45 0.25 0.64 8.32 28 15 0.10 0.00 3.91 6.02
0.2
2.21 1.80
technical drawings according to DIN specifications
1
7.29 6.88
14
13049
Rev. A1, 20-May-99
7 (8)
Preliminary Information
TST0911
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423
8 (8)
Rev. A1, 20-May-99
Preliminary Information

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