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| Chip Varistor DESCRIPTION The LVS series is metal oxide based chip varistor for transient voltage suppression. They have non-linear voltage-current behavior, similar to zener diode. Multilayer structured varistor, however, shows superiority in electrical reliability than zener diode, since each grain exhibits small p-n junction. In addition, LVS series shows better electrical properties such as high clamping voltage and low leakage current. FEATURES *Chip varistor provides high reliability on surface mounting *Wide range of working voltage (VW = 5.6V30V) *Good clamping ratio and low leakage current *Electroplating of Ni and solder gives higher solderability *Wide operating temperature (-55125C ) *Various capacitance is available APPLICATIONS *Protection from transient voltage noise in all kinds of IC *Protection from ESD, EFT and surge in power I/O port *Replacement of zener diode ORDERING INFORMATION LVS 10 033 B 200 401 Series LVS = Standard LVSL = Low Capacitance Capacitance 030 = 3pF 300 = 30pF 301 = 300pF Size 10 16 20 32 = = = = 1005(0402) 1608(0603) 2012(0805) 3216(1206) Clamping voltage 100 = 10V 300 = 30V Transient energy Z A B C D E F G H I J K = = = = = = = = = = = = 0.005J 0.02J 0.05J 0.1J 0.2J 0.3J 0.4J 0.6J 0.8J 1.0J 1.3J 1.5J 1 Working voltage 056 = 5.6V 090 = 9.0V 260 = 26V www.rhopointcomponents.com Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Chip Varistor SPECIFICATIONS Part No. Symbol Working Voltage (<25A) VW (V) Breakdown Voltage (@ 1mA ) VB (V) Clamping Voltage ( 8/20S) VC (V) Peak Current ( 8/20S) IP (A) Transient Energy (10/1000S) ET (J) Capacitance (@ 1 kHz) C (pF) 1005(0402) size Part No. LVS10056B160... LVS10090B200... LVS10140B300... LVS10180B400... LVS10260B580... VW (V) 5.6 9 14 18 26 VB (V) 7.29.6 10.814.3 16.822.2 21.528.5 30.940.9 VC (V) 16 20 30 40 58 IP (A) 20 20 20 20 20 ET (J) 0.05 0.05 0.05 0.05 0.05 C (pF) 370 200 100 50 30 1608(0603) size Part No. LVS16056C160... LVS16090C200... LVS16140C300... LVS16180C400... LVS16260C580... LVS16300C650... VW (V) 5.6 9 14 18 26 30 VB (V) 7.29.6 10.814.3 16.822.2 21.528.5 30.940.9 35.747.3 VC (V) 16 20 30 40 58 65 IP (A) 30 30 30 30 30 30 ET (J) 0.1 0.1 0.1 0.1 0.1 0.1 C (pF) 1000 650 350 230 180 100 2012(0805) size Part No. LVS20056C160... LVS20090C200... LVS20140C300... LVS20180C400... LVS20260C580... LVS20300C650... VW (V) 5.6 9 14 18 26 30 VB (V) 7.29.6 10.814.3 16.822.2 21.528.5 30.940.9 35.747.3 VC (V) 16 20 30 40 58 65 IP (A) 40 40 35 35 35 35 ET (J) 0.1 0.1 0.1 0.1 0.1 0.1 C (pF) 3000 1300 800 450 300 200 3216(1206) size Part No. LVS32056C160... LVS32090C200... LVS32140C300... LVS32180C400... LVS32260C580... LVS32300C650... * LVS32180F400... VW (V) 5.6 9 14 18 26 30 18 VB (V) 7.29.6 10.814.3 16.822.2 21.528.5 30.940.9 35.747.3 21.528.5 VC (V) 16 20 30 40 58 65 40 IP (A) 40 40 35 35 35 35 150 ET (J) 0.1 0.1 0.1 0.1 0.1 0.1 0.4 C (pF) 1800 1300 800 450 300 200 1500 * For Automotive Application : Withstand 24.5V DC for 5minutes Low Capacitance Series Part No. LVS10090C200... LVS10140C300... LVS10180C400... LVS10260C580... LVS10300C650... Working Voltage 9 14 18 26 30 Breakdown Voltage 10.814.3 16.822.2 21.528.5 30.940.9 35.747.3 Clamping Voltage 20 30 40 58 65 Peak Current 40 35 35 35 35 Transient Energy 0.1 0.1 0.1 0.1 0.1 Capacitance 1300 800 450 300 200 * 1MHz VW = Maximum DC voltage, that is applied continuously in the maximum operating temperature of the device. VB = Varistor voltage or normal voltage, that is measured at the applied current of 1mA. VC = Peak voltage appearing across the varistor when measured at the condition of specified pulsed current and waveform. (8/20S, 0.1J 2A, 0.05J 1A) IP = Surge current or peak current, the maximum current without causing device failure measured with specified waveform.( 8/20S) ET = Maximum rated transient energy that is dissipated for a single current pulse at a specified impulse duration.( 10/1000S) 2 www.rhopointcomponents.com Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Chip Varistor RELIABILITY TEST METHOD Item Resistance to Soldering Heat Solderability Test Test Method Soldering temperature : 260 5C Duration of immersion : 10 1sec. Preheating : 150C , 1min. Soldering temperature : 230 5C Duration of immersion : 5 1sec. Preheating : 150C , 1min. The Force W is applied to DUT. Criteria for judging Visual : No mechanical damage VB/VB <10% At least 75% of the electrode must be covered with new solder. Visual : No mechanical damage 0805 : over 2.0Kgf 0603 : over 1.0Kgf 0402 : over 0.7Kgf Adhesion Resistance to Flexure of Substrate The middle part of substrate shall, successively, be pressurized by means of the pressurizing rod at a rate of about 1mm/sec. Maintenance time : 5 sec. Bending distane : 1mm Visual : No mechanical damage Dry Heat Test Test temperature : 125 2C Test duration : 1000+48hrs. After completion of the test, leaving the sample under the standard conditions for 24 2hrs. Test temperature : -30 2C Test duration : 1000+48hrs. After completion of the test, leaving the sample under the standard conditions for 24+ 2hrs. Test temperature : 40 2C Test relative humidity : 9095RH% Test duration : 56days+24hrs. After completion of the test, leaving the sample under the standard conditions for 24 2hrs.(IEC60068-2-3) Visual : No mechanical damage VB /VB <10% Cold Test Visual : No mechanical damage VB /VB <10% Damp Heat Test (Steady State) Visual : No mechanical damage V /VB <10% B Thermal Shock Test Visual : No mechanical damage VB /VB <10% This cycle is repeated 50 times. After completion of the test, leave the sample under standard condition for 24 2hrs. ESD Test (Contact discharge) Test Voltage : 8 kV Type of discharge : direct contact discharge Number of test pulses : 20 times Polarity : +/(IEC 61000-4-2) ESD Test (Air Discharge) Test Voltage : 15 kV Type of discharge : air discharge Number of test pulses : 20 times Polarity : +/(IEC 61000-4-2) Temp. : 125 2C Duration : 1000 48hrs. Applied voltage : V dc max After completion of the test, leave the sample under standard condition for 24 2hrs. Visual : No mechanical damage VB /VB <15% Visual : No mechanical damage VB /VB <15% High Temperature Life Test Visual : No mechanical damage VB /VB <10% www.rhopointcomponents.com Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 3 Chip Varistor CHARACTERISTIC CURVES I-V Characteristics Temperature vs. VB Typical Temperature Dependence of VB Temperature vs. a 4 www.rhopointcomponents.com Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Chip Varistor RELIABILITY TEST DATA High Temperature Life Test Cold Test Thermal Shock Test Resistance to Soldering Heat ESD Test Adhesion www.rhopointcomponents.com Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 5 Chip Varistor APPLICATION FOR ESD What is ESD ? It is a kind of transient voltage noise. The definition of transient voltage is listed in IEC 61000-4 series, which describes the immunity requirements and test methods for electrical and electric equipments, subjected to ESD, EFT, and surge. Figure 1 is the waveform of ESD, defined in IEC 61000-4-2. Protection Performance of Lattron is Varistor for ESD The performance of Lattron is varistor against ESD noise is tested with the test circuit as shown in Picture 2. Test procedure includes three different circuit configurations; without varistor, with varistor at DUT position, and shorted circuit at DUT position. The test results that had collected with digital scope are shown in Picture 3. The performance of ESD suppression with Lattron is varistor is as good as that of short circuit. Picture 1. Picture 2. Varistor vs. TVS Diode ESD current has the rise time of sub-nanosecond, duration of tens of nanosecond, and its amplitude reaches over 10KV. So, the protecting device from ESD also needs fast response time. TVS diode has a similar performance with that of LATTRON's varistor, in terms of response time and handling capacity. Which, however, shows inferiority in surge current, leakage current, operating directionality, polarity, and miniaturization as shown in the table. o LATTRON(R) VARISTOR TVS DIODE > 1ns Response time ESD handling capability Leakage current Surge current handling capability Operating temp. Size < 1ns > Contact 8kV, 10 cycle Low in all spec. High in all spec. Characteristics are deteriorated over 80C Min. 0603 mm High in case of low voltage spec. Low especially in high voltage spec. Characteristics are deteriorated from 25C Min. 1608 mm TEST INSTRUMENTS : TEKTRONIX TDS3054. MINIZAP Picture 3. 6 www.rhopointcomponents.com Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 |
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