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( DataSheet : www..com ) HiPerFASTTM IGBT VCES IC25 VCE(sat) 1.8 V 2.1 V 2.4 V tfi 220ns 120ns 75 ns IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load, L = 30 H TC = 25C Maximum Ratings 300 300 20 30 60 40 160 ICM = 80 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A TO-247 SMD* G E C (TAB) TO-247 AD C (TAB) A W C C C C C G C E G = Gate, C = Collector, E = Emitter, TAB = Collector * Add suffix letter "S" for surface mountable package Features * International standard packages JEDEC TO-247 AD and surface mountable TO-247 SMD * High current handling capability * Newest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 300 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 Md Weight Mounting torque (M3) TO-247 AD TO-247 SMD 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.5 5 200 1 100 40N30 40N30A 40N30B 1.8 2.1 2.4 V V A mA nA V V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE TJ = 25C TJ = 125C * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages * High power density * Suitable for surface mounting * Switching speed for high frequency applications * Easy to mount with 1 screw, (isolated mounting screw hole) (c) 2001 IXYS All rights reserved 97506E(11/01) www..com IXGH 40N30 IXGH 40N30A IXGH 40N30B IXGH 40N30S IXGH 40N30AS IXGH 40N30BS Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 28 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 60 145 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 50 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 1.0 Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 40N30 40N30A 40N30B 40N30 40N30A 40N30B 40N30 40N30A 40N30B 25 40 170 100 75 230 120 75 1.6 0.75 0.3 25 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 1.0 Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 40N30 40N30A 40N30B 40N30 40N30A 40N30B 40N30 40N30A 40N30B 40 0.3 250 150 90 350 220 130 3.3 1.6 0.6 170 35 75 S 1 2 3 TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns ns ns ns ns mJ mJ mJ ns ns mJ 500 ns 300 ns 180 ns 600 ns 330 ns 230 ns 4.8 mJ 2.4 mJ 1.4 mJ 0.62 K/W 1 - Gate 2 - Drain (collector) Dim. 3 - Source (Emitter 4 - Drain (collector Inches Min. .190 .090 .075 .045 .075 .024 .819 Max. .205 .100 .085 .055 .084 .031 .840 Dim. td(on) tri Eon td(off) tfi Eoff Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline RthJC RthCK Min. Recommended Footprint (Dimensions in inches and mm) 0.25 K/W Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.19 0.61 20.80 5.21 2.54 2.16 1.40 2.13 0.80 21.34 A A1 A2 b b1 C D E e L L1 L2 L3 L4 P Q R S 15.75 16.13 5.45 BSC 4.90 2.70 2.10 0.00 1.90 5.10 2.90 2.30 0.10 2.10 .620 .635 .215 BSC .193 .106 .083 .000 .075 .201 .114 .091 .004 .083 3.55 3.65 5.59 6.20 4.32 4.83 6.15 BSC .140 .144 .220 .244 .170 .190 .242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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