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| BUL49A MECHANICAL DATA Dimensions in mm 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR * * * * * * * SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI-REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls FEATURES * Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages. 1 16.97 (0.668) 16.87 (0.664) TO3 Pin 1 - Base Pin 2 - Emitter Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) Ptot Tstg Rth Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Total Dissipation at Tcase = 25C Operating and Storage Temperature Range Thermal Resistance (junction-case) Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 600V 300V 10V 25A 40A 200W -65 to 175C Max. 0.7CW Prelim. 4/99 BUL49A ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO Test Conditions Min. 300 600 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 600V TC = 125C IB = 0 VEB = 5V IC = 0 IC = 2A IC = 10A IC = 15A IC = 2A TC = 125C VCE = 4V VCE = 4V VCE = 4V TC = 125C IB = 0.2A IB = 1A IB = 1.5A IB = 1A IB = 1.5A VCE = 4V f = f = 10MHz VCE = 300V V 10 100 100 10 100 mA mA mA 30 20 15 55 28 20 0.07 0.4 1.2 1.1 1.4 0.2 0.7 1.5 1.3 2 V V -- hFE* DC Current Gain VCE(sat)* Collector - Emitter Saturation Voltage IC = 10A IC = 15A IC = 10A IC = 15A IC = 100 10MHz VCB = 20V VBE(sat)* Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS ft Cob Transition Frequency Output Capacitance 20 260 MHz pF * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 4/99 |
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