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SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type 2SK2489 ( F10S18VZ ) 180V 10A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) *oe DC/DC converters *oe Power supplies of DC 12-24V input *oe Product related to Integrated Service Digital Network RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* C*j D i ID Continuous Drain Current* eak) P i IDP Continuous Source Current* C*j D i IS Total Power Dissipation PT Single Pulse Avalanche Current IAS Tch= 25*Z Ratings -55*150 150 180 *}30 10 20 10 45 10 Unit *Z V A W A Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VZ Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2489 ( F10S18VZ ) Min. 180 Typ. Max. 250 0.1 3.0 2.0 7.0 0.17 3.0 Unit V A ID = 1mA, VGS = 0V VDS = 180V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 150V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 20 25 720 80 280 50 140 S 0.25 4.0 V 1.5 2.77 / nC pF 100 280 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2489 20 Tc = -55C 25C 100C 15 150C Transfer Characteristics Drain Current ID [A] 10 5 VDS = 10V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2489 1000 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [m] ID = 5A 100 10 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2489 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2489 100 Safe Operating Area 10 Drain Current ID [A] 100s R DS(ON) limit 200s 1 1ms 10ms DC Tc = 25C Single Pulse 0.1 1 10 100 180 Drain-Source Voltage VDS [V] 2SK2489 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2489 10000 Capacitance Capacitance Ciss Coss Crss [pF] 1000 Ciss Coss 100 Crss Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2489 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2489 200 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 150 VDD = 150V 100V 50V 100 VDS VGS 50 15 10 5 ID = 10A 0 0 10 20 30 40 50 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] |
Price & Availability of 2SK2489
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