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2SC5810
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
* * * High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 85 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 100 80 50 7 1.0 2.0 0.1 2.0 1.0 150 -55 to 150 Unit V V V A A W C C
JEDEC JEITA TOSHIBA
SC-62 2-5K1A
Weight: 0.05 g (typ.)
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.3 A IC = 300 mA, IB = 6 mA IC = 300 mA, IB = 6 mA VCB = 10 V, IE = 0, f = 1 MHz See Figure 1. VCC 30 V, RL = 100 IB1 = -IB2 = 10 mA Min 50 400 200 Typ. 5 35 680 85 Max 100 100 1000 0.17 1.10 ns V V pF Unit nA nA V
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2SC5810
Marking
VCC 20 s RL IB1 IB2 IB2 Duty cycle < 1% Lot No. IB1 Output Part No. (or abbreviation code)
Input
3
C
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Figure 1
Switching Time Test Circuit & Timing Chart
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2SC5810
IC - VCE
1 20 0.8 15 10 8 10000
hFE - IC
Common emitter VCE = 2 V Single nonrepetitive pulse
IC (A)
6
hFE
4 0.6 2 0.4 IB = 1 mA 0.2
Ta = 100C 1000
Collector current
DC current gain
25 100 -55
0 0
Common emitter Ta = 25 C Single nonrepetitive pulse 0 0.2 0.4 0.6 0.8 1 1.2
30 0.001
0.003
0.01
0.03
0.1
0.3
1
Collector-emitter voltage
VCE
(V)
Collector current IC (A)
VCE (sat) - IC
1 Common emitter 10 IC/IB = 50 0.3 Single nonrepetitive pulse
VBE (sat) - IC
Common emitter IC/IB = 50 Single nonrepetitive pulse 25 1 Ta = 100C -55
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
0.3 1
3
0.1 Ta = 100C 0.03 25 0.01 -55
0.3
0.1
0.003 0.001
0.003
0.01
0.03
0.1
0.03 0.001
0.003
0.01
0.03
0.1
0.3
1
Collector current IC (A)
Collector current IC (A)
IC - VBE
1.0 Common emitter VCE = 2 V Single nonrepetitive pulse
IC (A) Collector current
0.8
0.6
0.4
0.2
0 0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage
VBE
(V)
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2SC5810
rth - tw
1000
Transient thermal resistance rth (j-a) (C/W)
300
100
30
10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 30 100 300 1000
2
3
Pulse width
tw
(s)
Safe Operating Area
10
(A)
3
IC max (pulsed)* IC max (continuous) DC operation (Ta = 25C)
10 ms* 1 ms* 100 s* 10 s*
10 s*
Collector current IC
1
0.3
100 ms*
*: Single nonrepetitive pulse Ta = 25C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass 0.03 epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.3 3 0.1 1
10
30
VCEO max 100
Collector-emitter voltage
VCE
(V)
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2SC5810
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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