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| BFG 194 PNP Silicon RF Transistor * For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 194 BFG194 Q62702-F1321 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 100 10 mW 1000 150 - 65 ... + 150 - 65 ... + 150 75 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 75 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Aug-22-1996 BFG 194 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 100 A 1 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Aug-22-1996 BFG 194 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 1.4 0.4 4.7 - GHz pF 2 dB 2.8 4.7 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 8 3 11 6.5 - IC = 70 mA, VCE = 8 V, ZS = 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Aug-22-1996 BFG 194 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS TS TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 RthJS K/W Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Aug-22-1996 BFG 194 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 4.0 5.5 GHz pF 10V 8V 5V Ccb 3.0 fT 4.5 4.0 2.5 3.5 2.0 3.0 1.5 2.5 1.0 2.0 1.5 1.0 0 4 8 12 16 V VR 22 0 20 40 60 80 0.7V 1V 3V 2V 0.5 0.0 mA IC 120 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 12 5V dB 10V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 7.0 10V dB 3V 2V 5V 3V 2V G G 5.0 8 4.0 6 1V 3.0 2.0 4 0.7V 2 0.0 0 0 20 40 60 80 mA IC 120 -1.0 0 1.0 0.7V 1V 20 40 60 80 mA IC 120 Semiconductor Group 5 Aug-22-1996 BFG 194 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 12 dB 10 VCE = Parameter, f = 900MHz 42 IC=70mA 0.9GHz dBm 38 8V 5V G 9 8 7 1.8GHz 6 5 4 3 2 1 0 0 2 4 6 8 V 12 0.9GHz IP3 36 34 32 30 28 26 24 22 20 18 16 14 12 0 1V 2V 3V 20 40 60 80 V CE mA IC 120 Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 28 IC=70mA dB dB 24 IC=70mA G 20 S21 22 20 18 15 16 14 12 10 10 8 5 10V 2V 1V 6 4 2 0 -2 0.0 1V 0.7V 0.5 1.0 2V 10V 2.0 GHz f 3.0 0 0.7 -5 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 1.5 Semiconductor Group 6 Aug-22-1996 BFG 194 Package Semiconductor Group 7 Aug-22-1996 |
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