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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features * 10.5 A, 400V, RDS(on) = * Low Crss ( typical 85pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability 0.5 @VGS = 10 V * Low gate charge ( typical 28 nC) (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ! G! GDS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) Parameter FQP11N40C 10.5 6.6 42 FQPF11N40C 400 10.5 * 6.6 * 42 * 30 360 11 13.5 4.5 Units V A A A V mJ A mJ V/ns Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) 135 1.07 -55 to +150 300 44 0.35 W W/C C C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP11N40C 0.93 0.5 62.5 FQPF11N40C 2.86 -62.5 Units C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP11N40C/FQPF11N40C Rev. C FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP11N40C FQPF11N40C Device FQP11N40C FQPF11N40C Package TO-220 TO-220F Reel Size --Tape Width --Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------ -0.54 ----- --1 10 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.25 A VDS = 40 V, ID = 5.25 A (Note 4) 2.0 --- -0.43 7.1 4.0 0.53 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---840 250 85 1090 325 110 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 200 V, ID = 10.5 A, RG = 25 -------- 14 89 81 81 28 4 15 40 190 170 170 35 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 10.5 A VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/s ----(Note 4) ---290 2.4 10.5 42 1.4 --- A A V ns C -- FQP11N40C/FQPF11N40C Rev. C 2 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150C -55C 25C 10 0 10 0 Notes : 1. 250s Pulse Test 2. TC = 25C Notes : 1. VDS = 40V 10 -1 10 0 10 1 10 -1 2. 250s Pulse Test 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 RDS(ON) [], Drain-Source On-Resistance IDR, Reverse Drain Current [A] VGS = 10V 1.5 10 1 1.0 10 0 VGS = 20V 0.5 Note : TJ = 25C 150C 25C 10 -1 Notes : 1. VGS = 0V 2. 250s Pulse Test 0 5 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 2000 1800 1600 1400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 250V Capacitance [pF] Ciss Coss 8 1200 1000 800 600 400 200 0 -1 10 0 VDS = 400V 6 Crss Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 10.5A 0 10 10 1 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQP11N40C/FQPF11N40C Rev. C 3 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 5.25 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250A 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 9-1. Maximum Safe Operating Area of FQP3N50C Operation in This Area is Limited by R DS(on) Figure 9-2. Maximum Safe Operating Area of FQPF3N50C Operation in This Area is Limited by R DS(on) 10 2 10 2 10 s ID, Drain Current [A] ID, Drain Current [A] 100 s 10 1 10 s 100 s 10 1 1 ms 10 ms 100 ms DC 1 ms 10 ms 100 ms 10 0 10 0 DC Notes : 1. TC = 25C 2. TJ = 15C 3. Single Pulse Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse -1 10 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. MaximumDrain Current 12 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [C] FQP11N40C/FQPF11N40C Rev. C 4 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. ransient Thermal Response Curve of FQP3N50C 10 0 D = 0 .5 (t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s i n g le p u ls e N o te s : 1 . Z J C ( t) = 0 .9 3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) PDM t1 t2 0 Z JC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. ransient Thermal Response Curve of FQPF3N50C Z JC Thermal Response (t), 10 0 D = 0 .5 0 .2 0 .1 0 .0 5 N o te s : 1 . Z J C t) = 2 .8 6 /W M a x . ( 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) ( 10 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e t1 10 -2 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQP11N40C/FQPF11N40C Rev. C 5 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time FQP11N40C/FQPF11N40C Rev. C 6 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQP11N40C/FQPF11N40C Rev. C 7 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters FQP11N40C/FQPF11N40C Rev. C 8 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters FQP11N40C/FQPF11N40C Rev. C 9 15.87 0.20 www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 10 FQP11N40C/FQPF11N40C Rev. C www.fairchildsemi.com |
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