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| BFR 183W NPN Silicon RF Transistor * For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q62702-F1493 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 210 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 56 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 183W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 183W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.46 0.24 1 - GHz pF 0.7 dB 1.2 2 - IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 15 9 18 11.5 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 183W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0345 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 14.772 1.2149 3.4276 0.85331 2.5426 23.077 22.746 1.8773 1.1967 1.0553 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 1.0112 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.75 1.11 300 fA fA mA V fF V eV K 0.013483 A 0.053823 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 183W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 500 mW Ptot 400 TS 350 300 250 200 TA 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/P totDC D=0 0.005 0.01 0.2 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-11-1996 BFR 183W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.1 pF 10 GHz Ccb 0.9 0.8 0.7 0.6 fT 8 10V 7 6 5 3V 5V 0.5 4 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 V VR 22 3 2 1 0 0 5 10 15 20 25 30 35 mA IC 45 1V 0.7V 2V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 dB 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 11 10V 3V 10V 3V G 17 16 15 14 13 12 11 10 9 8 7 6 5 0 5 10 15 20 25 30 35 G 10 9 8 2V 2V 7 6 5 4 1V 1V 3 2 0.7V 0.7V 1 0 -1 0 mA IC 45 5 10 15 20 25 30 35 mA IC 45 Semiconductor Group 6 Dec-11-1996 BFR 183W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 19 dB 17 VCE = Parameter, f = 900MHz 30 IC=15mA 0.9GHz 8V G 16 15 14 13 12 11 10 9 8 7 6 5 4 0 2 4 6 8 10 V 13 V CE 1.8GHz 1.8GHz 0.9GHz IP3 dBm 5V 3V 20 2V 15 1V 10 5 0 5 10 15 20 25 30 mA IC 40 Power Gain Gma, Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) VCE = Parameter 30 IC=15mA dB IC=15mA dB G 25 S21 20 20 15 15 10 10 10V 1V 5 0.7V 1V 0 0.0 0 0.0 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 5 10V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-11-1996 |
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