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TYPICAL PERFORMANCE CURVES (R)
APT15GT120BRDQ1 APT15GT120BRDQ1G*
APT15GT120BRDQ1(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 50KHz * Ultra Low Leakage Current
G
TO -2 47
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT15GT120BRDQ1(G) UNIT Volts
1200 30 36 18 45 45A @ 960V 250 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.5
2 2
5.5 3.0 3.8
6.5 3.6 200 TBD 480
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
A nA
12-2005 050-6267 Rev C
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GT120BRDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 15A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
1070 100 65 10 105 10 60 45 10 11 85 35 585 800 260 10 11 95 42 590 1440 340 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 15A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V I C = 15A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.50 1.18 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-6267
Rev C
12-2005
TYPICAL PERFORMANCE CURVES
45 40
IC, COLLECTOR CURRENT (A)
V
GE
= 15V
60 50
APT15GT120BRDQ1(G)
15V
14V 13V
35 30 25 20 15 10 5 0
TJ = -55C
IC, COLLECTOR CURRENT (A)
40 12V 30 11V 20 10 0 10V 9V 8V
TJ = 25C
TJ = 125C
45 40
IC, COLLECTOR CURRENT (A)
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 15A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
35 30 25 20 15 10 5 0 0
TJ = -55C TJ = 25C TJ = 125C
VCE = 240V VCE = 600V
VCE = 960V
8 6 4 2 0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
20
40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge
120
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
6 5
IC = 30A IC = 15A
IC = 30A
4
IC = 15A
3 2 1
3 2 1 0
IC = 7.5A
IC = 7.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
9
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
45
0 -50
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80
40 35 30 25 20 15 10 5 12-2005 050-6267 Rev C
0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
14 12 10 8 6 4 2 TJ = 25C, TJ =125C
VCE = 600V RG = 5 L = 100 H
120 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns) 100 80 60 40 20 VCE = 800V RG = 5
APT15GT120BRDQ1(G)
td(ON), TURN-ON DELAY TIME (ns)
VGE =15V,TJ=125C VGE =15V,TJ=25C
10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
40 35 30 tf, FALL TIME (ns) tr, RISE TIME (ns) 25 20 15 10 5
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 800V
0
5
10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
45 40 35 30 25 20 15 10 5
TJ = 25C, VGE = 15V
0
L = 100 H
5
RG = 5, L = 100H, VCE = 800V
TJ = 125C, VGE = 15V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
4000 EON2, TURN ON ENERGY LOSS (J) 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
1000 EOFF, TURN OFF ENERGY LOSS (J)
= 800V V CE = +15V V GE R = 5
G
0
V = 800V CE V = +15V GE R = 5
G
800
TJ = 125C
TJ = 125C
600
400
200
TJ = 25C
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 0
Eon2,7.5A Eon2,15A Eoff,15A Eoff,7.5A Eoff,30A
V = 800V CE V = +15V GE T = 125C
J
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
4000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 5
G
0
Eon2,30A
3500 3000 2500 2000 1500 1000 500 0
Eon2,30A
12-2005
Eon2,15A
Eoff,30A
Rev C
Eon2,7.5A
050-6267
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,7.5A
Eoff,15A
TYPICAL PERFORMANCE CURVES
2,000 1,000 C, CAPACITANCE ( F) 500 Cies IC, COLLECTOR CURRENT (A)
50 45 40 35 30 25 20 15 10 5
APT15GT120BRDQ1(G)
P
100 50
Coes
Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.60 0.50 D = 0.9 0.40 0.30 0.20 0.10 0 0.7 0.5 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE
ZJC, THERMAL IMPEDANCE (C/W)
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
400 FMAX, OPERATING FREQUENCY (kHz)
100 50
RC MODEL Junction temp. (C) 0.271 Power (watts) 0.229 Case temperature. (C) 0.0898 0.00471
F
10 5
T = 125C J T = 75C C D = 50 % V = 800V CE R = 5
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
0
050-6267
Rev C
12-2005
APT15GT120BRDQ1(G)
APT15DQ120
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 90% 10% 5% Collector Voltage
Switching Energy
5%
A D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) tf
TJ = 125C
Collector Voltage
90% 10% 0 Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-6267
Rev C
12-2005
TYPICAL PERFORMANCE CURVES
APT15GT120BRDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT15GT120BRDQ1(G) UNIT Amps
15 29 110
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.8 3.4 2.45
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7
21 240 260 3 290 960 6 130 1340 19 -
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.5
Note:
PDM
0.3 SINGLE PULSE
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp. (C) 0.676 Power (watts) 0.504 Case temperature. (C) 0.0440 0.00147
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-6267
Rev C
12-2005
60 50 40 30 20 10 0 trr, REVERSE RECOVERY TIME (ns) TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 0 30A
APT15GT120BRDQ1(G)
T = 125C J V = 800V
R
IF, FORWARD CURRENT (A)
15A
7.5A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC) 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 800V
R
0
30A
2000
20
1500 15A
15
1000 7.5A
10
15A
500
5
7.5A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5
Duty cycle = 0.5 T = 175C
J
0
trr trr IRRM
Qrr
Qrr
0.4 0.2 0.0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-6267
Rev C
12-2005
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10078BLL
APT15GT120BRDQ1(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-6267
Dimensions in Millimeters and (Inches)
Rev C
Gate Collector (Cathode) Emitter (Anode)
12-2005
19.81 (.780) 20.32 (.800)

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