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2.5 , 1.8 V to 5.5 V, 2.5 V Triple/Quad SPDT Switches in Chip Scale Packages ADG786/ADG788
FUNCTIONAL BLOCK DIAGRAMS
S1B D1 S1A S3A D3 S3B S2A D2 S2B S2B LOGIC D2 S2A A0 A1 A2 EN S3B D3 S3A IN2 IN1 IN4
FEATURES 1.8 V to 5.5 V Single Supply 2.5 V Dual Supply 2.5 On Resistance 0.5 On Resistance Flatness 100 pA Leakage Currents 19 ns Switching Times Triple SPDT: ADG786 Quad SPDT: ADG788 20-Lead 4 mm 4 mm Chip Scale Packages Low Power Consumption TTL/CMOS-Compatible Inputs For Functionally-Equivalent Devices in 16-Lead TSSOP Packages, See ADG733/ADG734 APPLICATIONS Data Acquisition Systems Communication Systems Relay Replacement Audio and Video Switching Battery-Powered Systems GENERAL DESCRIPTION
ADG786
S1A D1 S1B
S4A D2 S4B
ADG788
IN3
SWITCHES SHOWN FOR A LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual 2.5 V make the ADG786 and ADG788 ideal for battery powered, portable instruments and many other applications. All channels exhibit break-before-make switching action preventing momentary shorting when switching channels. An EN input on the ADG786 is used to enable or disable the device. When disabled, all channels are switched OFF. These multiplexers are designed on an enhanced submicron process that provides low power dissipation yet gives high switching speed, very low on resistance, high signal bandwidths and low leakage currents. On resistance is in the region of a few ohms, is closely matched between switches and very flat over the full signal range. These parts can operate equally well in either direction and have an input signal range which extends to the supplies. The ADG786 and ADG788 are available in small 20-lead chip scale packages.
1. Small 20-Lead 4 mm x 4 mm Chip Scale Packages (CSP). 2. Single/Dual Supply Operation. The ADG786 and ADG788 are fully specified and guaranteed with 3 V 10% and 5 V 10% single supply rails, and 2.5 V 10% dual supply rails. 3. Low On Resistance (2.5 typical). 4. Low Power Consumption (<0.01 W). 5. Guaranteed Break-Before-Make Switching Action.
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2001
ADG786/ADG788-SPECIFICATIONS1 (V
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF ADG786 tON(EN) tOFF(EN) Break-Before-Make Time Delay, tD Charge Injection Off Isolation Channel-to-Channel Crosstalk -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
2
DD
=5V
10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
B Version -40 C +25 C to +85 C 0 V to VDD 2.5 4.5 5.0 0.1 0.4 1.2 0.01 0.1 0.01 0.1
Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ A typ A max
Test Conditions/Comments
VS = 0 V to VDD, IDS = 10 mA; Test Circuit 1 VS = 0 V to VDD, IDS = 10 mA VS = 0 V to VDD, IDS = 10 mA VDD = 5.5 V VD = 4.5 V/1 V, VS = 1 V/4.5 V; Test Circuit 2 VD = VS = 1 V, or 4.5 V; Test Circuit 3
0.5
0.3 0.5 2.4 0.8
0.005 4 19
0.1
VIN = VINL or VINH
34 7 12 20 40 7 12 13 3 -72 -67 160 11 34 0.001 1.0
NOTES 1 Temperature range is as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
1
RL = 300 , CL = 35 pF; VS1A = 3 V, VS1B = 0 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 3 V, Test Circuit 5 RL = 300 , CL = 35 pF; VS = 3 V, Test Circuit 5 RL = 300 , CL = 35 pF; VS = 3 V, Test Circuit 6 VS = 2 V, RS = 0 , CL = 1 nF; Test Circuit 7 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 8 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF, Test Circuit 10 f = 1 MHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5.5 V
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ADG786/ADG788
SPECIFICATIONS1 (V
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON)
DD
=3V
10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
B Version -40 C +25 C to +85 C 0 V to VDD 6 11 12 0.1 0.5 3
Unit V typ max typ max typ nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ A typ A max
Test Conditions/Comments
On-Resistance Match between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF ADG786 tON(EN) tOFF(EN) Break-Before-Make Time Delay, tD Charge Injection Off Isolation Channel-to-Channel Crosstalk -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD
2
VS = 0 V to VDD, IDS = 10 mA; Test Circuit 1 VS = 0 V to VDD, IDS = 10 mA VS = 0 V to VDD, IDS = 10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V or 3 V; Test Circuit 3
0.01 0.1 0.01 0.1
0.3 0.5 2.0 0.8
0.005 4 28
0.1
VIN = VINL or VINH
55 9 16 29 60 9 16 22 3 -72 -67 160 11 34 0.001 1.0
NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
1
RL = 300 , CL = 35 pF; VS1A = 2 V, VS1B = 0 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 2 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 2 V, Test Circuit 5 RL = 300 , CL = 35 pF; VS = 2 V, Test Circuit 5 RL = 300 , CL = 35 pF; VS = 2 V, Test Circuit 6 VS = 1 V, RS = 0 , CL = 1 nF; Test Circuit 7 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 8 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF, Test Circuit 10 f = 1 MHz f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or 3.3 V
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ADG786/ADG788-SPECIFICATIONS1
DUAL SUPPLY
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF ADG786 tON(EN) tOFF(EN) Break-Before-Make Time Delay, tD Charge Injection Off Isolation Channel-to-Channel Crosstalk -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD ISS
2
(VDD = +2.5 V
10%, VSS = -2.5 V
10%, GND = 0 V, unless otherwise noted.)
B Version -40 C +25 C to +85 C VSS to VDD 2.5 4.5 5.0 0.1 0.4 1.2 0.01 0.1 0.01 0.1
Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ A typ A max A typ A max
Test Conditions/Comments
VS = VSS to VDD, IDS = 10 mA; Test Circuit 1 VS = VSS to VDD, IDS = 10 mA VS = VSS to VDD, IDS = 10 mA VDD = +2.75 V, VSS = -2.75 V VS = +2.25 V/-1.25 V, VD = -1.25 V/+2.25 V; Test Circuit 2 VS = VD = +2.25 V/-1.25 V, Test Circuit 3
0.5
0.3 0.5 1.7 0.7
0.005 4 21
0.1
VIN = VINL or VINH
35 10 16 21 40 10 16 13 5 -72 -67 160 11 34 0.001 1.0 0.001 1.0
NOTES 1 Temperature range is as follows: B Version: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
1
RL = 300 , CL = 35 pF; VS1A = 1.5 V, VS1B = 0 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 1.5 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 1.5 V, Test Circuit 5 RL = 300 , CL = 35 pF; VS = 1.5 V, Test Circuit 5 RL = 300 , CL = 35 pF; VS = 1.5 V, Test Circuit 6 VS = 0 V, RS = 0 , CL = 1 nF; Test Circuit 7 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 8 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF, Test Circuit 10 f = 1 MHz f = 1 MHz VDD = +2.75 V Digital Inputs = 0 V or 2.75 V VSS = -2.75 V Digital Inputs = 0 V or 2.75 V
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ADG786/ADG788
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -3.5 V Analog Inputs2 . . . . . . . . . . . . . . VSS - 0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Digital Inputs2 . . . . . . . . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (A, B Versions) . . . . . . . . . . . . . -40C to +85C
Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150C 20 Lead CSP, JA Thermal Impedance . . . . . . . . . . . 32C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300C IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . 220C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at A, EN, IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG786/ADG788 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Model ADG786BCP ADG788BCP
Temperature Range -40C to +85C -40C to +85C
Package Description Chip Scale Package (CSP) Chip Scale Package (CSP)
Package Option CP-20 CP-20
PIN CONFIGURATIONS
S2B S1A S4A VDD IN1 IN4
NC
NC
NC
20 19 18 17 16 S2A 1 S3B 2 D3 3 S3A 4 EN 5 6
VSS
PIN 1 IDENTIFIER
20 19 18 17 16 15 D2 14 NC D1 1 S1B 2 VSS 3 GND 4 S2B 5 6
D2
PIN 1 IDENTIFIER
D4
15 S4B 14 VDD 13 S3B 12 D3 11 S3A
ADG786
TOP VIEW (Not to Scale)
13 D1 12 S1B 11 S1A
ADG788
TOP VIEW (Not to Scale)
7
GND
8
A2
9
A1
10
A0
7
S2A
8
IN2
9
IN3
10
NC
NC = NO CONNECT EXPOSED PAD TIED TO SUBSTRATE, V SS
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ADG786/ADG788
Table I. ADG786 Truth Table Table II. ADG788 Truth Table
A2 X 0 0 0 0 1 1 1 1
A1 X 0 0 1 1 0 0 1 1
A0 X 0 1 0 1 0 1 0 1
EN 1 0 0 0 0 0 0 0 0
ON Switch None D1-S1A, D2-S2A, D3-S3A D1-S1B, D2-S2A, D3-S3A D1-S1A, D2-S2B, D3-S3A D1-S1B, D2-S2B, D3-S3A D1-S1A, D2-S2A, D3-S3B D1-S1B, D2-S2A, D3-S3B D1-S1A, D2-S2B, D3-S3B D1-S1B, D2-S2B, D3-S3B
TERMINOLOGY
Logic 0 1
Switch A OFF ON
Switch B ON OFF
VDD VSS IDD ISS GND S D IN VD (VS) RON RON RFLAT(ON) IS (OFF) ID, IS (ON) VINL VINH IINL(IINH) CS (OFF) CD, CS(ON) CIN tON tOFF tON(EN) tOFF(EN) tOPEN Charge Off Isolation Crosstalk On Response Insertion Loss
Most Positive Power Supply Potential Most Negative Power Supply in a Dual Supply Application. In single supply applications, this should be tied to ground close to the device. Positive Supply Current Negative Supply Current Ground (0 V) Reference Source Terminal. May be an input or output Drain Terminal. May be an input or output Logic Control Input Analog Voltage on Terminals D, S Ohmic Resistance between D and S On Resistance Match between Any Two Channels, i.e., RONmax - RONmin. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal range. Source Leakage Current with the Switch "OFF" Channel Leakage Current with the Switch "ON" Maximum Input Voltage for Logic "0" Minimum Input Voltage for Logic "1" Input Current of the Digital Input "OFF" Switch Source Capacitance. Measured with reference to ground. "ON" Switch Capacitance. Measured with reference to ground. Digital Input Capacitance Delay time measured between the 50% and 90% points of the digital inputs and the switch "ON" condition. Delay time measured between the 50% and 90% points of the digital input and the switch "OFF" condition. Delay time between the 50% and 90% points of the EN digital input and the switch "ON" condition. Delay time between the 50% and 90% points of the EN digital input and the switch "OFF" condition. "OFF" time measured between the 80% points of both switches when switching from one address state to another. A measure of the glitch impulse transferred Injection from the digital input to the analog output during switching. A measure of unwanted signal coupling through an "OFF" switch. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. The Frequency Response of the "ON" Switch The Loss Due to the ON Resistance of the Switch.
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Typical Performance Characteristics- ADG786/ADG788
8 7 6 VDD = 2.7V ON RESISTANCE - VDD = 3.3V VDD = 4.5V TA = 25 C VSS = 0V 8 TA = 25 C 7 6 5 4 3 2 1 0 1 2 3 4 5 0 -3 VDD = +2.5V VSS = -2.5V 7 6 8 VDD = 5V VSS = 0V
ON RESISTANCE -
5 4 3 2
ON RESISTANCE -
5 4 3 2 -40 C 1 0 +85 C +25 C
VDD = 5.5V 1 0
-2
-1
0
1
2
3
0
1
2
3
4
5
VD, VS, DRAIN OR SOURCE VOLTAGE - V
VD, VS, DRAIN OR SOURCE VOLTAGE - V
VD, VS, DRAIN OR SOURCE VOLTAGE - V
TPC 1. On Resistance as a Function of VD(VS) for Single Supply
TPC 2. On Resistance as a Function of VD(VS) for Dual Supply
TPC 3. On Resistance as a Function of VD(VS) for Different Temperatures, Single Supply
0.10
8 7 6 VDD = 3V VSS = 0V
8 7 6 5 4 +85 C 3 2 -40 C +25 C VDD = +2.5V VSS = -2.5V
0.05
ON RESISTANCE -
VDD = 5V VSS = GND TA = 25 C IS, ID (ON), VD = VS
5 4 3 2 1 0 -40 C
CURRENT - nA
+85 C
ON RESISTANCE -
0
-0.05 IS (OFF) -0.10
+25 C
1 0 -3 -2 -1 0 1 2 3
-0.15
0
1.0 1.5 2.0 2.5 3.0 0.5 VD, VS, DRAIN OR SOURCE VOLTAGE - V
0
1
2
3
4
5
VD, VS, DRAIN OR SOURCE VOLTAGE - V
VS, (VD = VDD -VS) - V
TPC 4. On Resistance as a Function of VD(VS) for Different Temperatures, Single Supply
TPC 5. On Resistance as a Function of VD(VS) for Different Temperatures, Dual Supply
TPC 6. Leakage Currents as a Function of VD(VS)
0.10 0.08 0.06
CURRENT - nA
0.15
VDD = 3V VSS = GND TA = 25 C CURRENT - nA
0.10
VDD = +2.5V VSS = -2.5V TA = 25 C
CURRENT - nA
0.25 0.20 0.15
VDD = +2.5V VSS = -2.5V VD = +2.25V/-1.25V VS = -1.25V/+2.25V
VDD = 5V VSS = GND VD = 4.5V/1.0V VS = 1.0V/4.5V
0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 0.5 1.0 1.5 2.0 2.5 3.0 IS (OFF) IS, ID (ON), VD = VS
0.05 IS, ID (ON), VD = VS 0
0.10 0.05 0 IS, ID (ON)
-0.05 IS (OFF) -0.10 -0.15 -3
-0.05 -0.10
IS (OFF)
-2
-1
0
1
2
3
5
20
35
50
65
80
VS, (VD = VDD -VS) - V
VS, (VD = VDD -VS) - V
TEMPERATURE - C
TPC 7. Leakage Currents as a Function of VD(VS)
TPC 8. Leakage Currents as a Function of VD(VS)
TPC 9. Leakage Currents as a Function of Temperature
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ADG786/ADG788
0.25 0.20 0.15 VDD = 3V VSS = GND VD = 2.7V/1V VS = 1V/2.7V 40 35 tON, VDD = 3V
0
VSS = GND
-2
ON RESPONSE - dB
30
-4 -6 -8 -10 -12 -14
VDD = 5V TA = 25 C
CURRENT - nA
0.10 0.05 IS, ID (ON) 0 -0.05 IS (OFF) -0.10 5 20 35 50 65 80
TIME - ns
25 tON, VDD = 5V 20 15 10 5 0 -20 0 tOFF, VDD = 3V tOFF, VDD = 5V
20
40
60
80
-16 10k
100k
TEMPERATURE - C
TEMPERATURE - C
1M 10M FREQUENCY - HZ
100M
TPC 10. Leakage Currents as a Function of Temperature
TPC 11. tON / tOFF Times vs. Temperature
TPC 12. On Response vs. Frequency
10m TA = 25 C 1m
0 -10 -20 VDD = 5V TA = 25 C ATTENUATION - dB
0 -10 -20 -30 -40 -50 -60 -70 -80 100k 1M 10M FREQUENCY - Hz 100M -90 30k
VDD = 5V TA = 25 C
ATTENUATION - dB
10000
CURRENT - A
100 VDD = +2.5V VSS = -2.5V
VDD = 5V VSS = GND
-30 -40 -50 -60 -70 -80 -90
10 1
100n
VSS = 3V VDD = GND
10n 0.1
1
10 100 1000 FREQUENCY - kHz
-100 30k
100k
1M 10M FREQUENCY - Hz
100M
TPC 13. Input Current, IDD vs. Switching Frequency
TPC 14. Off Isolation vs. Frequency
TPC 15. Crosstalk vs. Frequency
30 VDD = +2.5V VSS = -2.5V 20
QINJ - pC
TA = 25 C
VDD = 3V VSS = GND 10
0 VDD = 5V VSS = GND -10 -3 -2 -1 0 1 2 VOLTAGE - V 3 4 5
TPC 16. Charge Injection vs. Source Voltage
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ADG786/ADG788 Test Circuits
IDS V1
IS (OFF)
S VS RON = V1/IDS D
A VS
S
D VD
NC
S
D
ID (ON) A VD
NC = NO CONNECT
Test Circuit 1. On Resistance
VDD 0.1 F
Test Circuit 2. IS (OFF)
Test Circuit 3. ID (ON)
VDD VS1B VS1A S1B D1 S1A RL 300 IN/EN CL 35pF VOUT
ADDRESS DRIVE VS1A VOUT VS1B
50%
50%
90%
90%
GND
VSS
tON
tOFF
0.1 F
VSS
Test Circuit 4. Switching Times, tON, tOFF
VDD 0.1 F 3V VDD A2 A1 A0 VSS S1A S1B VS ENABLE DRIVE (VIN) 0V tOFF(EN) VO D1 GND RL 300 CL 35pF VO OUTPUT 0V tON(EN) 0.9V0 0.9V0 50% 50% VSS
ADG786
EN VIN 50
Test Circuit 5. Enable Delay, tON (EN), tOFF (EN)
VDD 0.1 F VDD ADDRESS* VIN 50 SA SB VS 0V 3V ADDRESS
ADG786/ ADG788
D1 GND VSS RL 300 CL 35pF VOUT
VS VOUT 80% 80%
0.1 F tOPEN VSS *A0, A1, A2 for ADG786, IN1-4 for ADG788
Test Circuit 6. Break-Before-Make Delay, tOPEN
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ADG786/ADG788
VDD VDD VSS VSS 3V LOGIC INPUT (VIN) 0V S EN* VIN GND D CL 1nF VOUT VOUT VOUT QINJ = CL VOUT
ADG786/ ADG788
RS VS
* IN1-4 for ADG734
Test Circuit 7. Charge Injection
VDD 0.1 F
VSS 0.1 F NETWORK ANALYZER
0.1 F
VDD
VSS 0.1 F NETWORK ANALYZER
VDD S IN
VSS
VDD S
VSS
50 D
50 VS VOUT
50 VS D VOUT
IN
VIN GND
RL 50
VIN GND
RL 50
OFF ISOLATION = 20 LOG
VOUT VS
INSERTION LOSS = 20 LOG
VOUT WITH SWITCH VOUT WITHOUT SWITCH
Test Circuit 8. OFF Isolation
VDD 0.1 F NETWORK ANALYZER VOUT RL 50 50 IN VS GND CHANNEL-TO-CHANNEL VOUT CROSSTALK = 20 LOG VS VSS 0.1 F
Test Circuit 10. Bandwidth
Power Supply Sequencing
VDD SA SB
VSS
D
R 50
When using CMOS devices, care must be taken to ensure correct power supply sequencing. Incorrect sequencing can result in the device being subjected to stresses beyond those maximum ratings listed in the data sheet. Digital and analog inputs should be applied to the device after supplies and ground. In dual supply applications, if digital and analog inputs may be applied prior to VDD and VSS supplies, the addition of a Schottky diode connected between VSS and GND will ensure that the device powers on correctly. For single supply applications, VSS should be tied to GND as close to the device as possible.
Test Circuit 9. Channel-to-Channel Crosstalk
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ADG786/ADG788
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
20-Lead Chip Select Package (CP-20)
0.024 (0.60) 0.017 (0.42) 0.009 (0.24) 0.024 (0.60) 0.017 (0.42) 16 0.009 (0.24) 15 0.148 (3.75) BSC SQ 0.012 (0.30) 0.009 (0.23) 0.007 (0.18) 0.030 (0.75) 0.024 (0.60) 0.020 (0.50)
0.157 (4.0) BSC SQ PIN 1 INDICATOR
0.010 (0.25) MIN
20 1
TOP VIEW
BOTTOM VIEW
11 10 6 5
0.089 (2.25) 0.083 (2.10) SQ 0.077 (1.95)
12 MAX 0.035 (0.90) MAX 0.033 (0.85) NOM SEATING PLANE 0.020 (0.50) BSC
0.028 (0.70) MAX 0.026 (0.65) NOM
0.080 (2.00) REF
0.008 (0.20) REF
0.002 (0.05) 0.0004 (0.01) 0.0 (0.0)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS
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C02381-1-7/01(0)
PRINTED IN U.S.A.

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