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| SEMICONDUCTOR TECHNICAL DATA LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. FEATURES Small Surface Mounting Type. (SOT-23) Low Forward Voltage : VF max=0.5V A G L KDR411S SCHOTTKY BARRIER TYPE DIODE E B L DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 High Reliability 3 D B C D E G H J K H 1 CONSTRUCTION Silicon epitaxial planar. P P L M N P C N MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IO IFSM Tj Tstg RATING 40 20 0.5 3 125 -40 +125 UNIT V V A A M 3 1. NC 2. ANODE 3. CATHODE 2 1 K SOT-23 Marking Type Name J Lot No. U3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance VF (1) VF (2) IR CT ) TEST CONDITION IF=10mA IF=500mA VR=10V VR=10V, f=1MHz MIN. TYP. 20 MAX. 0.3 0.5 30 UNIT V V A pF SYMBOL 2002. 10. 2 Revision No : 1 1/2 KDR411S I F - VF 1 FORWARD CURRENT I F (A) REVERSE CURRENT I R (A) 10m I R - VR Ta=125 C 100m Ta =1 25 Ta C =7 5 C Ta =2 5 C Ta =-2 5 C 1m Ta=75 C 10m 100 1m 10 Ta=25 C 100 0 0.1 0.2 0.3 0.4 0.5 0.6 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE V R (V) C T - VR 1K TOTAL CAPACITANCE C T (pF) Ta=25 C f=1MHz 100 10 1 0 10 20 30 40 REVERSE VOLTAGE V R (V) 2002. 10. 2 Revision No : 1 2/2 |
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