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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
3.0 0.3
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX. 3.6 0.2 10.0 4.8 MAX. 1.3 0.2
5.9 MIN.
123
* Low On-Resistance
2SK2355: RDS(on) = 1.4 (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 (VGS = 10 V, ID = 2.5 A)
4
12.7 MIN. 15.5 MAX.
FEATURES
6.0 MAX.
* Low Ciss Ciss = 670 pF TYP. * High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (Ta = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 30 5.0 20 50 1.5 150 5.0 17.4 V V A A W
1.3 0.2 0.75 0.1 2.54
0.5 0.2 2.8 0.2
2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4.8 MAX. 1.3 0.2
1.5 MAX.
4
C A mJ
-55 to +150 C
1.0 0.5
W
1.4 0.2
1.0 0.3 (2.54) (2.54) 123
8.5 0.2
R) .5 R) (0 0.8 (
1.1 0.2 3.0 0.5
0.5 0.2
MP-25Z (TO-220 SURFACE MOUNT TYPE)
Drain
2.8 0.2
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
Body Diode Gate
Source
The information in this document is subject to change without notice. Document No. D11391EJ3V0DS00 (3rd edition) (Previous No. TC-2500) Date Published March 1998 N CP(K) Printed in Japan
(c)
1994
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.9 1.0 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 670 140 18 11 8 40 8 20 4.5 9 1.0 270 1.0 2.5 1.0 100 100 MAX. 1.4 1.5 3.5 V S UNIT m TEST CONDITIONS VGS = 10 V ID = 2.5 A 2SK2355 2SK2356
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS = 10 V VDD = 150 V RG = 10 RL = 60 ID = 5.0 A VDD = 400 V VGS = 10 V IF = 5.0 A, VGS = 0 IF = 5.0 A, VGS = 0 di/dt = 50 A/s
A
nA pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 - 0 V 50 L VDD
Test Circuit 2 Switching Time
D.U.T.
RL VGS VDD
Wave Form
VGS
10 % 0 VGS (on)
90 %
PG.
RG RG = 10
ID
90 % 90 % 10 % 0 td (on) ton tr
BVDSS IAS ID VDD VDS
VGS 0 t t = 1 s Duty Cycle 1 %
ID
Wave Form
ID
10 % td (off) toff tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - % PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 60 50 40 30 20 10
80
60
40
20
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed
FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse) 10
d ite ) im V ) L 10 n (o = S S RD t VG ID (DC) (a Po
PW =
ID - Drain Current - A
10
10 0 s
0
ID - Drain Current - A
1.
8 VGS = 20 V 10 V 8V 6V
s
s
6
1
we
10 m
m s
1.0
rD
s
iss
ipa
2SK2355 2SK2356
ite
4
tio
n
0.1 1
TC = 25 C Single Pulse 10
Lim
2
d
100
1000
0
4
8
12
16
VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 Pulsed
VDS - Drain to Source Voltage - V
10
ID - Drain Current - A
1
0.1 0.05 0 5
Ta = -25 C 25 C 75 C 125 C 10 15
VGS - Gate to Source Voltage - V
3
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
rth(ch-c) (t) - Transient Thermal Resistance - C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
100
Rth(ch-a) = 83 C/W
10
1
Rth(ch-c) = 2.5 C/W
0.1 Tc = 25 C Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s
IyfsI - Forward Transfer Admittance - S
100 Ta = -25 C 25 C 75 C 125 C
RDS(on) - Drain to Source On-State Resistance -
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed
10
2.0 ID = 5 A 2.5 A 1A 1.0
1.0
0.1
1.0
10
100
0
10
20
30
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed VGS(off) - Gate to Source Cutoff Voltage - V 3.0
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA
RDS(on) - Drain to Source On-State Resistance -
4.0
2.0
3.0
2.0
1.0
1.0
0
0.01
0.1
1 ID - Drain Current - A
10
0
-50 0 50 100 150
Tch - Channel Temperature - C
4
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 4.0
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
10
3.0 ID = 4 A ID = 2 A
VGS = 0 1.0 10 V
2.0
1.0 VGS = 10 V 0 -50 0 50 100 150
0.1 0.05 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f = 1.0 MHz Ciss
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 500 tr 100 tf
5 000
Ciss, Coss, Crss - Capacitance - pF
1 000
td(off) 10 td(on)
100
Coss
Crss 10 5 1 10 100 1000 VDS - Drain to Source Voltage - V
1.0 0.5 0.1 1.0 10 ID - Drain Current - A
VDD = 100 V VGS = 10 V RG = 25 100
REVERSE RECOVERY TIME vs. DRAIN CURRENT 5 000
trr - Reverse Recovery time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400
VDS - Drain to Source Voltage - V
300
1 000
VDD = 400 V 250 V 125 V
14 VGS 12 10
200
8 6
100 VDS 0 5 10 15 20
4 2 0
100 50 0.1 1.0 10 100 ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 50 A/ s VGS = 0
16 ID = 5.0 A
5
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 20
EAS - Single Avalanche Energy - mJ
SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
15 EAS = 17.4 mJ 10
ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V
RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25C
10 IAS = 5.0 A
EAS =1 7.4
1.0
mJ
5
0
25
50
75
100
125
150
175
0.1 100
1.0 m
10 m
100 m
Starting Tch - Starting Channel Temperature - C
L - Inductive Load - H
6
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grades on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching to power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. C11745E C11531E C10535E C10943X MEI-1202 X10679E D12971E D12972E D13085E
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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