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| SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.014 ID (A) 70a TO-220AB D TO-263 DRAIN connected to TAB G GDS Top View SUP70N06-14 SUB70N06-14 DS G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit "20 70a 49 Unit V A 160 70 180 142c W 3.7 -55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70291 S-57253--Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.05 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB70N06-14 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 50 70 0.014 0.023 0.028 S W 60 V 2.0 3.0 4.0 "100 1 50 150 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.47 W , ID ] 60 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 60 A V VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 2400 490 130 45 12 16 13 11 30 11 30 30 ns 60 25 70 nC C pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr 25_C)b 70 A 160 IF = 70 A, VGS = 0 V 47 IF = 60 A, di/dt = 100 A/ms A di/d A/ 3.5 0.08 1.4 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70291 S-57253--Rev. C, 24-Feb-98 SUP/SUB70N06-14 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 150 VGS = 10, 9, 8 V 125 7V 80 6V I D - Drain Current (A) 100 Transfer Characteristics I D - Drain Current (A) 100 60 75 40 TC = 125_C 20 25_C -55_C 0 50 5V 25 4V 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C 70 g fs - Transconductance (S) 60 50 40 30 20 10 0 0 10 20 30 40 50 60 25_C 125_C r DS(on) - On-Resistance ( ) 0.0175 0.0200 On-Resistance vs. Drain Current 0.0150 VGS = 10 V 0.0125 VGS = 20 V 0.0100 0.0075 0.005 0 10 20 30 40 50 60 70 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 3500 3000 C - Capacitance (pF) 2500 2000 1500 1000 500 0 0 10 20 30 40 Crss Ciss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 60 A 12 8 Coss 4 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70291 S-57253--Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB70N06-14 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TC = 150_C TC = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0.25 0.50 0.75 1.00 1.25 1.50 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 500 Safe Operating Area 80 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms, 1 s, dc 60 100 ms 40 20 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70291 S-57253--Rev. C, 24-Feb-98 2-4 This datasheet has been download from: www..com Datasheets for electronics components. |
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