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| Semiconductor SI5313-H IRED Features * Low power consumption * Colorless transparency lens type * 5mm(T-13/4) all plastic mold type * High radiant intensity Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE PIN Connections 1.Anode 2.Cathode KLI-8004-001 1 SI5313-H Absolute maximum ratings Characteristic Power Dissipation Forward Current *1Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature 2 Symbol PD IF IFP VR Topr Tstg Tsol Ratings 150 100 1 4 -25 -30 260 85 100 for 5 seconds Unit mW mA A V *1.Duty ratio = 1/16, Pulse width = 0.1ms *2. Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Forward Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Reverse Current R Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min 10 - Typ 1.3 25 950 50 30 Max 1.7 10 - Unit V mW/Sr nm nm uA deg P * Half angle 3 /2 1 *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-8004-001 2 SI5313-H Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Ambient Temperature Ta [ ] Relative Intensity [%] Wavelength [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [V] KLI-8004-001 3 |
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