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MG1200FXF1US51
Preliminary
TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications Motor Control Applications
* * * High input impedance Enhancement mode Electrodes are isolated from case.
Equivalent Circuit
C G E E E E C C C
Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Symbol VCES VGES IC ICP IFSM Tj Tstg VIsol 3/4 Rating 3300 20 1200 2400 10 -40~125 -40~125 6000 (AC 1 min) 2/7 Nm 4 Unit V V A A kA C C V
Operating junction temperature Storage temperature range Isolation voltage Terminal: M4/M8 Screw torque Mounting
Caution: MG1200FXF1US51 has no short-circuit capability.
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MG1200FXF1US51
Electrical Characteristics (Tvj = 125C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage of diode Reverse recovery charge Peak reverse recovery current tf toff VF Qrr Irr Symbol IGES ICES VGE (off) VCE (sat) Cies tr ton Test Condition VGE = 20 V, VCE = 0 V VCE = 3300 V, VGE = 0 V VCE = 5 V, IC = 1.2 A IC = 1200 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 100 kHz VCC = 1800 V, IC = 1200 A, VGG = 15 V, CGE = 0.1 mF, RG (on)/(off) = 3.9/3.3 W (dic/dt (on) ~ 4900 A/ms) (Inductive load, Ls ~ 160 nH) IF = 1200 A, VGE = 0 V IF = 1200 A, VGG = -15 V, diF/dt ~ -4900 A/ms, VCC = 1800 V VCC = 1800 V, IC = 1200 A, turn-on loss Eon VGG = 15 V, CGE = 0.1 mF, RG (on)/(off) = 3.9/3.3 W Switching dissipation turn-off loss Eoff (dic/dt (on) ~ 4900 A/ms) (Inductive load, Ls ~ 160 nH) IF = 1200 A, VGG = -15 V, Diode reverse recovery loss Edsw diF/dt ~ -4900 A/ms, VCC = 1800 V 3/4 1.0 1.5 J 3/4 2.0 3.0 J 3/4 1500 3/4 A Min 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 75 4.4 4.6 230 2.1 0.3 4.0 1.8 3.5 1000 Max 50 100 3/4 5.3 3/4 3/4 3/4 3/4 3/4 4.0 3/4 Unit nA mA V V nF ms ms ms ms V mC
3/4
2.2
2.8
J
Thermal Resistance (Tc = 25C)
Characteristics Symbol Rth (j-c) Rth (c-f) Test Condition Transistor (IGBT) stage Diode stage Per module (Note 1) Min 3/4 3/4 3/4 Typ. 3/4 3/4 6.0 Max 8.0 16.0 3/4 C/kW Unit
Thermal Resistance
Note 1: Toshiba silicone's YG6260 heat radiation grease is recommended for use with semiconductor devices. Apply a thin, even (100-to-200-mm) coating of grease.
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MG1200FXF1US51
IC - VCE
2500 Tvj = 25C
(typ.)
2500
IF - VF
(typ.)
Tvj = 25C 125C
(A)
IF
(A)
2000
2000 125C 1500
IC
1500
Collector current
1000
Forward current
VGE = +15 V
1000
500
500
0 0
2
4
6
8
0 0
2
4
6
Collector-emitter voltage
VCE
(V)
Forward voltage
VF
(V)
Eon - IC
2.5
(typ.)
2.5
Eoff - IC
(typ.)
(J)
(J) Turn-off loss per a pulse Eoff
2.0 2.0 1.5 1.5 1.0 VCC = 1800 V RG = 3.9 W CGE = 0.1 mF Ls = 160 nH VGE = +/-15 V Tvj = 125C 500 1000 1500 1.0
Turn-on loss per a pulse Eon
0.5
0.5
VCC = 1800 V RG = 3.3 W CGE = 0.1 mF Ls = 160 nH VGE = +/-15 V Tvj = 125C 500 1000 1500
0 0
0 0
Collector current
IC
(A)
Collector current
IC
(A)
Edsw - IF
1.2
(typ.)
(C/kw)
0.1
Rth - t
Diode-stage
(max)
(J)
1.0
Edsw
Transient thermal resistance Rth(j-c)
0.8
0.01
Reverse recovery energy
0.6
IGBT-stage 0.001
0.4
0.2
0 0
VCC = 1800 V di/dt = 4900 A/ms Ls = 160 nH VGE = -15 V Tvj = 125C 500 1000 1500
0.0001
0.00003 0.001
0.01
0.1
1
10
Forward current
IF
(A)
Time t (s)
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MG1200FXF1US51
Package Dimensions: 2-193A1A
Unit: mm
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MG1200FXF1US51
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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