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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC6071/D Advance Information Sensitive Gate Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. * Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions * Gate Triggering 4 Mode -- MAC6071A,B, MAC6073A,B, MAC6075A,B * Blocking Voltages to 600 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability MAC6071A,B * MAC6073A,B * MAC6075A,B * *Motorola preferred devices TRIACs 4 AMPERES RMS 200 thru 600 VOLTS MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110C) MAC6071A,B MAC6073A,B MAC6075A,B IT(RMS) ITSM I2t PGM PG(AV) VGM TJ Tstg -- Symbol VDRM 200 400 600 4 30 3.7 10 0.5 5 -40 to +110 -40 to +150 8 Amps Amps A2s Watts Watt Volts C C in. lb. Value Unit Volts On-State Current RMS (TC = 85C) Peak Surge Current (One Full cycle, 60 Hz, TJ = -40 to +110C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power Average Gate Power Peak Gate Voltage Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw)(2) 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200C, for 10 seconds. Consult factory for lead bending options. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data (c) Motorola, Inc. 1996 1 MAC6071A,B MAC6073A,B MAC6075A,B THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 3.5 75 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Peak Blocking Current (VD = Rated VDRM, gate open) On-State Voltage (Either Direction) (ITM = 6 A Peak) Peak Gate Trigger Voltage (Continuous dc) (TJ = -40C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+); MT2(-), G(-) MT2(+), G(-); MT2(-), G(+) (TJ = 110C) MT2(+), G(+); MT2(-), G(-) MT2(+), G(-); MT2(-), G(+) (TJ = 25C) MT2(+), G(+); MT2(-), G(-) MT2(+), G(-); MT2(-), G(+) Holding Current (Either Direction) (TJ = -40C) (Main Terminal Voltage = 12 Vdc, Gate Open) (Initiating Current = 150 mA) (TJ = 25C) Latching Current MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) (VD = 6 V) (IG = 8 mA) (IG = 8 mA) (IG = 8 mA) (IG = 15 mA) TJ = 25C (TJ = 25C) (TJ = 110C) VTM VGT 0.5 0.5 0.2 0.2 0.4 0.4 IH 0.4 0.2 IL -- -- -- -- IGT 2.0 5.0 1.0 2.0 10 20 10 10 mA 2.0 1.0 10 5.0 mA 0.8 0.8 0.4 0.4 0.7 0.7 1.9 1.9 0.9 0.9 1.4 1.4 mA Symbol IDRM -- -- -- -- -- 1.3 10 2.0 2.0 Min Typ Max Unit A mA Volts Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MAC6071A, MAC6073A, MAC6075A MT2(+), G(+) TJ = 25C MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) TJ = -40C 0.4 0.4 0.4 0.8 0.8 0.8 0.8 1.6 2.0 3.0 3.0 4.5 3.5 4.5 5.0 10 5.0 5.0 5.0 10 10 10 10 20 2 Motorola Thyristor Device Data MAC6071A,B MAC6073A,B MAC6075A,B ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MAC6071B, MAC6073B, MAC6075B MT2(+), G(+) TJ = 25C MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Turn-On Time (Either Direction) (ITM = 14 Adc, IGT = 100 mAdc) TJ = -40C Symbol IGT Min Typ Max Unit mA 0.4 0.4 0.4 0.8 0.8 0.8 0.8 1.6 tgt -- 1.5 2.5 2.5 3.5 3.0 4.0 4.5 7.5 1.5 3.0 3.0 3.0 5.0 8.0 8.0 8.0 15 -- s DYNAMIC CHARACTERISTICS Characteristic Critical Rate of Rise of Off-State Voltage (VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 Vm/sec, Gate Open, TJ = 110C, f = 250 Hz, Snubber: CS = 0.1 mF, RS = 56 W, see Figure 16) Critical Rate of Rise of Off-State Voltage (VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110C) Symbol (di/dt)c -- 2.2 -- Min Typ Max Unit A/ms dv/dt -- 7.0 -- V/ms SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 0V 14 MC7400 4 7 VEE = 5.0 V + 2N6071A LOAD 115 VAC 60 Hz -VEE 510 QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I MT2(+), G(-) MT2(+), G(+) G(-) QUADRANT III QUADRANT IV G(+) MT2(-), G(-) MT2(-) MT2(-), G(+) NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see the Motorola's Thyristor Data Book (DL137/D, Revision 6). 1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6-25. 2. Silicon Bilateral Switch (SBS) Applications, page 1.6-41. Motorola Thyristor Device Data 3 MAC6071A,B MAC6073A,B MAC6075A,B TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) AVERAGE POWER P(AV) DISSIPATION (WATTS) 110 7.0 6.0 5.0 4.0 60 3.0 2.0 1.0 0 = CONDUCTION ANGLE DC 180 120 90 105 100 T = 30 = CONDUCTION ANGLE 60 90 120 95 T = 30 90 180 DC 2.0 2.5 3.0 3.5 4.0 85 0 0.5 1.0 1.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. Maximum On-State Power Dissipation Z q JC(t) C/W TRANSIENT THERMAL RESISTANCE 10 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 TYPICAL @ TJ = 25C 10 MAXIMUM @ TJ = 110C MAXIMUM 1.0 1.0 0.1 MAXIMUM @ TJ = 25C 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.1 1.0 10 100 1S103 1S104 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 2.5 9.0 8.0 IH , HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) 2.0 7.0 6.0 5.0 4.0 3.0 Q4 IG = 15 mA Q2 IG = 8 mA 1.5 MT2 NEGATIVE 1.0 MT2 POSITIVE 0.5 2.0 Q1 IG = 8 mA 1.0 Q3 IG = 8 mA -20 0 20 40 60 80 100 110 0 -40 -20 0 20 40 60 80 100 110 0 -40 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature (MAC6075B) 4 Motorola Thyristor Device Data MAC6071A,B MAC6073A,B MAC6075A,B 8.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 0.9 0.8 0.7 0.6 Q1 0.5 0.4 0.3 -40 Q2 Q3 Q4 6.0 Q4 Q3 4.0 Q2 Q1 2.0 0 -40 -20 0 20 40 60 80 100 110 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Gate Trigger Current versus Junction Temperature 24 VPK = 400 V 22 STATIC dv/dt (V/uS) STATIC dv/dt (V/uS) TJ = 110C 25 30 Figure 8. Typical Gate Trigger Voltage versus Junction Temperature RG-MT1 = 510 W TJ = 100C 20 500 V 20 110C 18 600 V 16 100 200 300 400 500 600 700 800 900 1000 15 120C 10 400 450 500 550 600 RGK, GATE-MT1 RESISTANCE (OHMS) VPK, PEAK VOLTAGE (VOLTS) Figure 9. Typical Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(+) 30 VPK = 400 V 25 STATIC dv/dt (V/uS) STATIC dv/dt (V/uS) 10.5 11 Figure 10. Typical Exponential Static dv/dt versus Peak Voltage, MT2(+) RG-MT1 = 510 W TJ = 110C VPK = 400 V 20 500 V 600 V 10 500 V 15 9.5 600 V 10 100 105 110 115 120 9.0 100 200 300 400 500 600 700 800 900 1000 TJ, JUNCTION TEMPERATURE (C) RGK, GATE-MT1 RESISTANCE (OHMS) Figure 11. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 12. Typical Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(-) Motorola Thyristor Device Data 5 MAC6071A,B MAC6073A,B MAC6075A,B 16 RG-MT1 = 510 W 14 STATIC dv/dt (V/uS) TJ = 100C STATIC dv/dt (V/uS) 16 RG-MT1 = 510 W 14 12 110C 12 500 V 10 600 V VPK = 400 V 10 8.0 120C 6.0 400 450 500 550 600 8.0 6.0 100 105 110 115 120 VPK, PEAK VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 13. Typical Exponential Static dv/dt versus Peak Voltage, MT2(-) 1.2 (dv/dt)c, CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/us) TJ = 110C 1.1 GATE OPEN 1.0 0.9 0.8 0.7 200 V Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(-) 100C 90C tw f + 2t1w (di dt) c + 6f I TM 1000 0.6 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 (di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage 80 mHY LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE TRIGGER CONTROL CHARGE CONTROL MEASURE I RS 56 W 1N4007 2 1N914 CS 0.1 mF ADJUST FOR dv/dt(c) 200 V 5 mF NON-POLAR CL 51 G 1 NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 6 Motorola Thyristor Device Data MAC6071A,B MAC6073A,B MAC6075A,B PACKAGE DIMENSIONS -B- U Q F M C -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- H K STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M CASE 77-08 (TO-225AA) Motorola Thyristor Device Data 7 MAC6071A,B MAC6073A,B MAC6075A,B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 *MAC6071/D* Motorola Thyristor Device Data MAC6071/D |
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