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| IGBT Transistor BSP 280 Preliminary Data q q q q q q q q VCE 1000 V I C 2.5 A N channel MOS input (voltage-controlled) High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel Information E6327: 1000 pcs/reel Pin Configuration 1 G 2 C 3 E 4 C Marking BSP 280 Package SOT-223 BSP 280 Q67000-S279 Maximum Ratings Parameter Symbol Values 2.5 1.5 0.5 3.0 Unit A Continuous collector current TS = 25 C Soldering point, TS = 80 C Pulsed collector current Soldering point, Collector-emitter voltage Gate-emitter voltage Power dissipation Soldering point, Ambient Thermal resistance 1) IC Continuous collector current ambient, TA = 80 C IC IC puls TS = 80 C VCE VGE Ptot TS = 80 C TA = 25 C Tj, Tstg RthJA RthJS - - chip-ambient chip-soldering point 10 1.8 - 40 ... + 150 70 6 E 40/150/56 C K/W - 1000 20 W V Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 IGBT = Insulated Gate Bipolar Transistor 1) Transistor on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for drain connection. BSP 280 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage VGE = 0, IC = 0.1 mA Gate threshold voltage VGE = VCE, IC = 0.1 mA Collector-emitter saturation voltage Values typ. max. Unit V(BR)CES 1000 - 5.5 - 6.5 V VGE(th) 4.5 VCE(sat) - - - - - - 1.8 2.1 2.2 2.8 3.8 4.0 - - 3.0 3.3 4.3 4.5 A - - 1 - 0.1 25 100 nA - 100 VGE = 15 V, IC = 0.5 A Tj = 25 C Tj = 125 C Tj = 150 C VGE = 15 V, IC = 1.5 A Tj = 25 C Tj = 125 C Tj = 150 C Zero gate voltage collector current VCE = 1000 V, VGE = 0 Tj = 25 C Tj = 125 C Gate-emitter leakage current VGE = 20 V, VCE = 0 Dynamic Characteristics Forward transconductance ICES IGES gfs - 0.6 225 25 13 20 15 - S pF - - - - ns - - - - VCE = 20 V, IC = 1.5 A Input capacitance Ciss Coss - VCE = 0, VGE = 25 V, f = 1 MHz Output capacitance VCE = 0, VGE = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 0, VGE = 25 V, f = 1 MHz td(on) Turn-on delay time VCC = 600 V, VGE = 15 V, RG(on) = 25 , IC = 1.5 A Rise time tr VCC = 600 V, VGE = 15 V, RG(on) = 25 , IC = 1.5 A BSP 280 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Values typ. 0.3 120 20 0.2 max. mWs - - - ns - - mWs - - Unit Eon Turn-on losses VCC = 600 V, VGE = 15 V, RG(off) = 25 , IC = 1.5 A Turn-off delay time VCC = 600 V, VGE = 15 V, RG(off) = 25 , IC = 1.5 A Fall time td(off) tf - VCC = 600 V, VGE = 15 V, RG(off) = 25 , IC = 1.5 A Eoff Total turn-off losses VCC = 600 V, VGE = 15 V, RG(off) = 25 , IC = 1.5 A Package Outline SOT-223 Dimensions in mm BSP 280 Characteristics at Tj = 25 C, unless otherwise specified. Typ. output characteristics IC = f (VCE) parameter: tp = 80 s Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE= 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz Typ. saturation characteristics VCE(sat) = f (VGE); parameter: Tj = 25 C BSP 280 Typ. saturation characteristic VCE(sat) = f (VGE); parameter: Tj = 125 C Typ. gate charge VGE = f (QGate) parameter: IC plus = 1 A |
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