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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF177 HF/VHF power MOS transistor
Product specification File under Discrete Semiconductors, SC08a September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES * High power gain * Low intermodulation distortion * Easy power control * Good thermal stability * Withstands full load mismatch.
andbook, halfpage 1
BLF177
PIN CONFIGURATION
4
d
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING - SOT121 PIN 1 2 3 4 drain source gate source DESCRIPTION
g
MBB072
s
2
3
MLA876
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB class-AB CW class-B f (MHz) 28 108 VDS (V) 50 50 PL (W) 150 (PEP) 150 GP (dB) > 20 typ. 19 D (%) > 35 typ. 70 d3 (dB) < -30 - d5 (dB) < -30 -
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF177
MAX. 110 20 16 220 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE max. 0.8 K/W max. 0.2 K/W
102 handbook, halfpage ID (A) 10
MRA906
handbook, halfpage
300
MGP089
Ptot (W) 200
(1)
(1)
(2)
(2)
1
100
10-1
1
10
102
VDS (V)
103
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 50 mA; VGS = 0 VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 50 mA; VDS = 10 V ID = 5 A; VDS = 10 V ID = 5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz MIN. 110 - - 2 - 4.5 - - - - -
BLF177
TYP. MAX. UNIT - - - - - 6.2 0.2 25 480 190 14 - 2.5 1 4.5 100 - 0.3 - - - - V mA A V mV S A pF pF pF
MGP090
handbook, halfpage
0
handbook, halfpage
30
MGP091
T.C.
(mV/K) -1
ID (A) 20
-2
-3 10 -4
-5 10-2
0 10-1 1 ID (A) 10 0 5 10 VGS (V) 15
VDS = 10 V; valid for Th = 25 to 70 C.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
400 handbook, halfpage RDS(on) (m)
MGP092
handbook, halfpage
1200
MBK408
C (pF) 800
300
Cis 400 200 Cos
0 100 0 50 100 Tj (C) 150 0 20 40 VDS (V) 60
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
300
MGP093
Crs (pF) 200
100
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. MODE OF OPERATION SSB, class-AB Note f (MHz) 28 VDS (V) 50 IDQ (A) 0.7 PL (W) 20 to 150 (PEP) GP (dB) > 20 typ. 35 D (%) > 35 typ. 40 d3 (dB) (note 1) < -30 typ. -35
BLF177
d5 (dB) (note 1) < -30 typ. -38
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB.
Ruggedness in class-AB operation The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 50 V; f = 28 MHz at rated output power.
handbook, halfpage
30
MGP096
handbook, halfpage
60
MGP094
Gp (dB) 20
D (%) 40
10
20
0 0 100 PL (W) PEP 200
0 0 100 PL (W) PEP 200
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9
Power gain as a function of load power, typical values.
Fig.10 Two tone efficiency as a function of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
-20
MGP097
handbook, halfpage
-20
MGP098
d3 (dB) -30
d5 (dB) -30
-40
-40
-50
-50
-60 0 100 PL (W) PEP 200
-60 0 100 PL (W) PEP 200
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a function of load power, typical values.
Fig.12 Fifth order intermodulation distortion as a function of load power, typical values.
handbook, full pagewidth
C9 C1 input 50 C2 C4 C3 L1 L2 D.U.T. L3 L6
C12
C14 C15
output 50
C10 C11 R1 R2 C5 C6 R3 R4 L5 +VG +VD C8 R5 C7 L4
C13
MGP095
f = 28 MHz.
Fig.13 Test circuit for class-AB operation.
September 1992
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
List of components (class-AB test circuit) COMPONENT C1, C4, C13, C14 C2 C3, C11 C5, C6 C7 C5 C7 C8 C9, C10 C12 C15 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 5 turns enamelled 0.7 mm copper wire stripline (note 2) 7 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube wideband HF choke 5 turns enamelled 2 mm copper wire 1 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 1 W metal film resistor 170 nH length 11.5 mm; int. dia. 8 mm; leads 2 x 5 mm VALUE 7 to 100 pF 56 pF 62 pF 100 nF 3 x 100 nF 10 nF 3 x 100 nF 2.2 F, 63 V 20 pF 100 pF 150 pF 133 nH length 4.5 mm; int. dia. 6 mm; leads 2 x 5 mm length 13 x 6 mm length 12.5 mm; int. dia. 8 mm; leads 2 x 5 mm DIMENSIONS
BLF177
CATALOGUE NO. 2222 809 07015
2222 852 47104 2222 852 47104 2222 852 47103 2222 852 47104
L2, L3 L4
41.1 236 nH
L5 L6
4312 020 36642
R1, R2 R2 R3 R5 Notes
10 10 k 1 M 10 k
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm.
September 1992
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
10
MGP099
handbook, halfpage
30
MGP100
Zi () 5 ri
Gp (dB) 20
0 xi
10
-5 0 10 20 f (MHz) 30
0 0 10 20 f (MHz) 30
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 ; RL = 6.25 .
Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 ; RL = 6.25 .
Fig.14 Input impedance as a function of frequency (series components), typical values.
Fig.15 Power gain as a function of frequency, typical values.
September 1992
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 15.8 ; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) 50 IDQ (A) 0.1 PL (W) 150 GP (dB) typ. 19
BLF177
D (%) typ. 70
handbook, halfpage
30
MGP101
handbook, halfpage
100
MGP102
Gp (dB) 20
(%)
50
10
0 0 100 PL (W) 200
0 0 100 PL (W) 200
Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz.
Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz.
Fig.16 Power gain as a function of load power, typical values.
Fig.17 Two tone efficiency as a function of load power, typical values.
September 1992
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, halfpage
200
MGP103
PL (W)
100
0 0 1 2 3 PIN (W) 4
Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 ; f = 108 MHz.
Fig.18 Load power as a function of input power, typical values.
C17
handbook, full pagewidth
C1 input 50
C3 L1
C4 L2 L3
D.U.T. BLF177
L4
L7
C13 L8
C15
C18
output 50
C14 C2 C5 R1 R2 L5 C9 C10
C16
C6 C7
C11
R6
C12
L6 R3 C8 R5 R4 f = 108 MHz. C19
MGP104
+VD
Fig.19 Test circuit for class-B operation.
September 1992
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C2, C16, C18 C3 C4, C5 C6, C7, C9, C10 C8 C11 C12 C13, C14 C15 C17 C19 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) electrolytic capacitor 3 turns enamelled 0.8 mm copper wire stripline (note 2) stripline (note 2) 6 turns enamelled 1.6 mm copper wire grade 3B Ferroxcube wideband HF choke 1 turn enamelled 1.6 mm copper wire 2 turns enamelled 1.6 mm copper wire 1 W metal film resistor 0.4 W metal film resistor cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor 16.5 nH 34.4 nH int. dia. 9 mm; leads 2 x 5 mm length 3.9 mm; int. dia. 6 mm; leads 2 x 5 mm VALUE 2.5 to 20 pF 20 pF 62 pF 1 nF 100 nF 10 nF 3 x 100 nF 36 pF 12 pF 5.6 pF 4.4 F, 63 V 22 nH length 5.5 mm; int. dia. 3 mm; leads 2 x 5 mm 31 x 3 mm 10 x 6 mm length 13.8 mm; int. dia. 6 mm; leads 2 x 5 mm DIMENSIONS
BLF177
CATALOGUE NO. 2222 809 07004
2222 852 47104 2222 852 47103 2222 852 47104
2222 030 28478
L2 L3, L4 L5
64.7 41.1 122 nH
L6 L7 L8
4312 020 36642
R1, R2 R3 R4 R5 R6 Notes
31.6 1 k 5 k 44.2 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm.
September 1992
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
handbook, full pagewidth
174
strap
rivet
strap 70
strap
R4
R5 C19 L6 R3 C8 C6 C7 C3 L1 C1 C2 C4 L2 C5 L3 L4 L7 C14 L8 C16 C18 C17 R1 R2 C9 R6 C11 C10 L5 C13 C15 +VD
C12
MGP105
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets. Dimensions in mm.
Fig.20 Component layout for 108 MHz class-B test circuit.
September 1992
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP107
MGP108
handbook, halfpage
4
Zi ()
handbook, halfpage
10
ZL ()
2
ri
8 RL
0 xi -2
6 XL 4
-4
2
-6
0 0 100 f (MHz) 200 0 100 f (MHz) 200
Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 .
Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 .
Fig.21 Input impedance as a function of frequency (series components), typical values.
Fig.22 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
30
MGP109
Gp (dB) 20
handbook, halfpage
10
Zi
ZL
MBA379
0 0 100 f (MHz) 200
Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 .
Fig.23 Definition of MOS impedance.
Fig.24 Power gain as a function of frequency, typical values.
September 1992
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF177
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
15
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF177
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
16

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